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Infineon Technologies AG IPB120P04P404ATMA2 MOSFET P-CH 40V 120A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB120P04P404ATMA2	Reel	5,000		1,000	1 - 10 - 100 - 1000 $1.27103 10000 $1.20463	Buy Now
Avnet Americas	IPB120P04P404ATMA2	Reel	1,000	12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPB120P04P404ATMA2		7,341			1 $2.77 10 $2.1 100 $1.52 1000 $1.2 10000 $1.2	Buy Now
Newark	IPB120P04P404ATMA2	Cut Tape	2,224		1	1 $2.01 10 $2.01 100 $2.01 1000 $2.01 10000 $2.01	Buy Now
Rochester Electronics	IPB120P04P404ATMA2		4,966		1	1 $1.34 10 $1.34 100 $1.26 1000 $1.14 10000 $1.14	Buy Now

Chip1Stop	IPB120P04P404ATMA2	Cut Tape	1,000			1 $2.48 10 $1.93 100 $1.84 1000 $1.64 10000 $1.64	Buy Now
EBV Elektronik	IPB120P04P404ATMA2			13 Weeks	540	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPB123N10N3GATMA1 MOSFET N-CH 100V 58A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB123N10N3GATMA1	Cut Tape	3,254		1	1 $2.5 10 $1.611 100 $2.5 1000 $0.88678 10000 $0.88678	Buy Now
	IPB123N10N3GATMA1	Digi-Reel	3,254		1	1 $2.5 10 $1.611 100 $2.5 1000 $0.88678 10000 $0.88678	Buy Now
	IPB123N10N3GATMA1	Reel	3,000		1,000	1 - 10 - 100 - 1000 $0.81698 10000 $0.81698	Buy Now
Verical	IPB123N10N3GATMA1		22,000		1,000	1 - 10 - 100 - 1000 $1.096 10000 $1.096	Buy Now
	IPB123N10N3GATMA1		4,000		1,000	1 - 10 - 100 - 1000 $0.799 10000 $0.799	Buy Now
	IPB123N10N3GATMA1		2,000		24	1 - 10 - 100 $1.0063 1000 $1.0025 10000 $0.91	Buy Now
	IPB123N10N3GATMA1		664		10	1 - 10 $0.9346 100 $0.7926 1000 $0.6413 10000 $0.6413	Buy Now
Arrow Electronics	IPB123N10N3GATMA1		22,000	16 Weeks	1,000	1 - 10 - 100 - 1000 $0.6783 10000 $0.6783	Buy Now
	IPB123N10N3GATMA1	Cut Strips	664	16 Weeks	1	1 $1.0743 10 $0.9346 100 $0.7926 1000 $0.6413 10000 $0.6413	Buy Now
Rochester Electronics	IPB123N10N3GATMA1				1	1 $0.8271 10 $0.8271 100 $0.7775 1000 $0.703 10000 $0.703	Buy Now
TME	IPB123N10N3GATMA1				1	1 $1.91 10 $1.49 100 $1.24 1000 $1.06 10000 $1.06	Get Quote

Ameya Holding Limited	IPB123N10N3GATMA1		1,015			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	IPB123N10N3GATMA1	Cut Tape	2,000			1 $1.27 10 $1.08 100 $0.795 1000 $0.792 10000 $0.719	Buy Now
EBV Elektronik	IPB123N10N3GATMA1		5,000	17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IPB123N10N3GATMA1		3,000		1	1 - 10 - 100 - 1000 $0.9935 10000 $0.9194	Buy Now
Infineon Technologies AG IPB144N12N3GATMA1 MOSFET N-CH 120V 56A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB144N12N3GATMA1	Reel	3,000		1,000	1 - 10 - 100 - 1000 $1.00819 10000 $0.95288	Buy Now
Avnet Americas	IPB144N12N3GATMA1	Reel		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	IPB144N12N3GATMA1	Cut Tape	566		1	1 $2.04 10 $1.7 100 $1.35 1000 $0.972 10000 $0.972	Buy Now
Bristol Electronics	IPB144N12N3GATMA1		2,646			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	IPB144N12N3GATMA1		1,000		1	1 $1.06 10 $1.06 100 $0.9964 1000 $0.901 10000 $0.901	Buy Now

EBV Elektronik	IPB144N12N3GATMA1			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPB180P04P4L02ATMA2 MOSFET P-CH 40V 180A TO263-7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB180P04P4L02ATMA2	Digi-Reel	2,863		1	1 $4.15 10 $2.731 100 $4.15 1000 $1.58448 10000 $1.58448	Buy Now
	IPB180P04P4L02ATMA2	Cut Tape	2,863		1	1 $4.15 10 $2.731 100 $4.15 1000 $1.58448 10000 $1.58448	Buy Now
	IPB180P04P4L02ATMA2	Reel	2,500		1,000	1 - 10 - 100 - 1000 $1.4815 10000 $1.4815	Buy Now
Arrow Electronics	IPB180P04P4L02ATMA2		2,000	12 Weeks	1,000	1 - 10 - 100 - 1000 $1.477 10000 $1.477	Buy Now
	IPB180P04P4L02ATMA2		1,000	12 Weeks	1,000	1 - 10 - 100 - 1000 $1.5621 10000 $1.5621	Buy Now
Newark	IPB180P04P4L02ATMA2	Cut Tape	565		1	1 $4.16 10 $3.49 100 $2.83 1000 $2.11 10000 $2.11	Buy Now
Chip 1 Exchange	IPB180P04P4L02ATMA2		838			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	IPB180P04P4L02ATMA2	Cut Tape	761			1 $2.91 10 $2.44 100 $1.88 1000 $1.87 10000 $1.87	Buy Now

EBV Elektronik	IPB180P04P4L02ATMA2		2,000	13 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IPB180P04P4L02ATMA2		2,000		1	1 - 10 - 100 - 1000 $2.33 10000 $2.16	Buy Now
Infineon Technologies AG IPB180P04P403ATMA2 MOSFET P-CH 40V 180A TO263-7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB180P04P403ATMA2	Reel	1,741		1,000	1 - 10 - 100 - 1000 $1.4395 10000 $1.4395	Buy Now
Avnet Americas	IPB180P04P403ATMA2	Reel	2,000	12 Weeks	1,000	1 - 10 - 100 - 1000 $1.4395 10000 $1.37095	Buy Now
Mouser Electronics	IPB180P04P403ATMA2		5,850			1 $3.08 10 $2.42 100 $1.77 1000 $1.43 10000 $1.43	Buy Now
Newark	IPB180P04P403ATMA2	Cut Tape	9,243		1	1 $4.16 10 $3.49 100 $2.83 1000 $1.93 10000 $1.93	Buy Now
Rochester Electronics	IPB180P04P403ATMA2		1,156		1	1 $1.6 10 $1.6 100 $1.5 1000 $1.36 10000 $1.36	Buy Now

Chip1Stop	IPB180P04P403ATMA2	Cut Tape	965			1 $3.84 10 $2.64 100 $2 1000 $1.89 10000 $1.89	Buy Now

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IPB1 Datasheets (145)

Part	Manufacturer	Description	Datasheet Type	PDF
IPB100N04S2-04	Infineon Technologies	OptiMOS Power-Transistor	Original	PDF
IPB100N04S204ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF
IPB100N04S204ATMA4	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF
IPB100N04S2L-03	Infineon Technologies	OptiMOS Power-Transistor	Original	PDF
IPB100N04S2L03ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF
IPB100N04S2L03ATMA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF
IPB100N04S3-03	Infineon Technologies	Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; V_DS (max): 40.0 V; R_{DS (on)} (max) (@10V): 2.5 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.7 K/W;	Original	PDF
IPB100N04S303ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF
IPB100N04S4-H2	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO263-3-2	Original	PDF
IPB100N04S4H2ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3-2	Original	PDF
IPB100N06S2-05	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 4.7 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.5 K/W;	Original	PDF
IPB100N06S205ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3	Original	PDF
IPB100N06S205ATMA4	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3	Original	PDF
IPB100N06S2L-05	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 4.4 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.5 K/W;	Original	PDF

IPB100N06S2L05ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3	Original	PDF
IPB100N06S2L05ATMA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3	Original	PDF
IPB100N06S3-03	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 3.0 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.5 K/W;	Original	PDF
IPB100N06S3-03	Infineon Technologies	OptiMOS -T Power-Transistor	Original	PDF
IPB100N06S3-04	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 4.1 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.7 K/W;	Original	PDF
IPB100N06S3L-03	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 2.7 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.5 K/W;	Original	PDF

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IPB1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PN04L03 Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42 Text: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPB100N04S2L-03 IPP100N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-19065 PN04L03 PN04L03 smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
120N06N Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	PDF	IPB120N06N IPP120N06N P-TO220-3-1 P-TO263-3-2 120N06N 120N06N 120N06 PG-TO220-3 ISS 99 diode ipp120n06ng
16cn10n Abstract: 16cn10 IPP16CN10N D53A PG-TO220-3 16CN1 Text: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)	Original	PDF	IPB16CN10N IPI16CN10N IPD16CN10N IPP16CN10N PG-TO263-3 PG-TO252-3 16cn10n 16cn10 D53A PG-TO220-3 16CN1
IPB120N06N Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features 60 V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 11.7 SMDversion 75 ID V mΩ A • 175 °C operating temperature	Original	PDF	IPB120N06N IPP120N06N IEC61249-2-21 P-TO220-3-1 P-TO263-3-2 120N06N 120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94
14N03LA Abstract: 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA Text: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 13.6 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	PDF	IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4156 14N03LA 14N03LA 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA
147N12N Abstract: No abstract text available Text: IPB144N12N3 G IPI147N12N3 G OptiMOSTM3 Power-Transistor IPP147N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 14.7 mΩ ID 56 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	PDF	IPB144N12N3 IPI147N12N3 IPP147N12N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 144N12N 147N12N
107n20n Abstract: 110N20N IPB107N20N3 IPP110N20N3 G DSV80 D88 z IPI110N20N3 IPI110N20N3 G IEC61249-2-21 PG-TO220-3 Text: IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on)	Original	PDF	IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n 110N20N IPP110N20N3 G DSV80 D88 z IPI110N20N3 G IEC61249-2-21 PG-TO220-3
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10 Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10
4N06H1 Abstract: IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode Text: IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 1.7 mΩ ID 180 A Features PG-TO263-7-3 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)	Original	PDF	IPB180N06S4-H1 PG-TO263-7-3 4N06H1 4N06H1 IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode
10n03l Abstract: smd diode 36A 10N03 OPTIMOS ANPS071E IPB10N03L IPP10N03L IPB10N03L SMD Text: IPP10N03L IPB10N03L OptiMOS Buck converter series Product Summary Feature • N-Channel VDS 30 V • Logic Level RDS on max. SMD version 8.9 mΩ • Low On-Resistance RDS(on) ID 73 A • Excellent Gate Charge x RDS(on) product (FOM) P- TO263 -3-2 P- TO220 -3-1	Original	PDF	IPP10N03L IPB10N03L Q67042-S4040 10N03L Q67040-S4346 10n03l smd diode 36A 10N03 OPTIMOS ANPS071E IPB10N03L IPP10N03L IPB10N03L SMD
15n03l Abstract: 15N03 IPB15N03L ANPS071E IPP15N03L F42A Text: IPP15N03L IPB15N03L OptiMOS Buck converter series Product Summary Feature 30 • N-Channel VDS • Logic Level RDS on max. SMD version • Low On-Resistance RDS(on) ID • Excellent Gate Charge x RDS(on) product (FOM) P- TO263 -3-2 V 12.6 mΩ 42 A P- TO220 -3-1	Original	PDF	IPP15N03L IPB15N03L Q67042-S4039 15N03L Q67040-S4344 15n03l 15N03 IPB15N03L ANPS071E IPP15N03L F42A
3QN0402 Abstract: PG-TO263-7-3 IPB180N04S3-02 ipb180n04 Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPB180N04S3-02 Product Summary V DS 40 V R DS on 1.6 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPB180N04S3-02 PG-TO263-7-3 3QN0402 14300pF 3900pF 710pF 245nC 210nC 3QN0402 PG-TO263-7-3 IPB180N04S3-02 ipb180n04
marking D78 Abstract: smd diode marking 78A Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature	Original	PDF	IPB110N06L IPP110N06L PG-TO263-3-2 P-TO263-3-2 110N06L P-TO220-3-1 marking D78 smd diode marking 78A
A1502 Abstract: smd diode code GS Q67065-A7009 SMD CODE G13 Text: Preliminary Data Sheet IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID	Original	PDF	IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N06S3L-03 IPI100N06S3L-03 PG-TO263-3-2 A1502 smd diode code GS Q67065-A7009 SMD CODE G13

16CNE8N Abstract: IPP16CNE8N Text: OptiMOS 2 Power-Transistor IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)	Original	PDF	IPB16CNE8N IPI16CNE8N IPD16CNE8N IPP16CNE8N PG-TO263-3 16CNE8N 16CNE8N
4N04H1 Abstract: IPB160N04S4-H1 PG-TO263-7-3 A6300 ipb160n 73 marking Text: IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on 1.6 mW ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)	Original	PDF	IPB160N04S4-H1 PG-TO263-7-3 4N04H1 4N04H1 IPB160N04S4-H1 PG-TO263-7-3 A6300 ipb160n 73 marking
12CN10N Abstract: No abstract text available Text: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N
4N06H1 Abstract: IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2 Text: IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.1 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow	Original	PDF	IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06H1 IPI120N06S4-H1 4N06H1 IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2
3PN0604 Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2 Text: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A • MSL1 up to 260°C peak reflow	Original	PDF	IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02220 3PN0604 3PN0604 TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
marking eb5 Abstract: diode marking eb5 IPP139N08N3 EB5 MARKING marking G9 i95B Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features 0 V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 R , ? >=1H, & Q ( @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC J +&. Y" ,- I9 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &	Original	PDF	IPP139N08N3 IPI139N08N3 IPB136N08N3 65AE5 marking eb5 diode marking eb5 EB5 MARKING marking G9 i95B
IPP17N25S3-100 Abstract: No abstract text available Text: IPB17N25S3-100 IPP17N25S3-100 OptiMOS -T Power-Transistor Product Summary VDS 250 V RDS on ,max 100 mW ID 17 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPB17N25S3-100 IPP17N25S3-100 PG-TO263-3-2 PG-TO220-3-1 3N25100 IPP17N25S3-100
107n20n Abstract: No abstract text available Text: IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A	Original	PDF	IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n
marking 6d Abstract: IPP147N12N Text: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! ' V ;I )*( K R - @ ?>2 I ),&/ Z" -. I; 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#	Original	PDF	IPB144N12N3 IPI147N12N3 IPP147N12N3 marking 6d IPP147N12N
B581C Abstract: No abstract text available Text: DATA SHEET_ BIPOLAR DIGITAL INTEGRATED CIRCUIT ¿xPB1508GV 3 GHz INPUT DIVIDE BY 2 PRESCALER IC FOR DBS TUNERS /¿PB1508GV is a 3.0 GHz input divide by 2 prescaler IC for DBS tuner applications. ¿¿PB1508GV can make VHF/UHF band PLL frequency synthesizer apply to DBS/ECS tuners. /iPB1508G V is a shrink package version of	OCR Scan	PDF	uPB1508GV PB1508GV /iPB1508G PB584G B581C

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Infineon Technologies AG IPB120P04P404ATMA2

Infineon Technologies AG IPB123N10N3GATMA1

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IPB1 Datasheets (145)

IPB1 Datasheets Context Search

PN04L03

120N06N

16cn10n

IPB120N06N

14N03LA

147N12N

107n20n

12CN10N

4N06H1

10n03l

15n03l

3QN0402

marking D78

A1502

16CNE8N

4N04H1

12CN10N

4N06H1

3PN0604

marking eb5

IPP17N25S3-100

107n20n

marking 6d

B581C