GP2AP002S00F
Abstract: No abstract text available
Text: GP2AP002S00F < Attached Document > 【1】Functional Explanation 1-1 Abstract GP2AP002S00F makes successive binary decisions whether reflective object exists, which GP2AP002S00F irradiates IR light to and receives its reflection from, according to its internal algorithm. GP2AP002S00F controls a built-in IR
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GP2AP002S00F
GP2AP002S00F
940nm)
OP13019EN
Attachment-18
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mw RADIO RECEIVER IC
Abstract: No abstract text available
Text: RFM News Release Contacts: PR Financial Marketing, LLC Jim Blackman 713-256-0369 [email protected] Carol Bivings Director IR, RF Monolithics, Inc. 972-448-3767 [email protected] RF MONOLITHICS, INC. UNVEILS THE THIRD GENERATION VIRTUAL WIRE RADIOS
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Untitled
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs IR EMITTERS .183 .186 ANODE CASE .209 .220 .015 .152 .154 .100 .041 .017 .030 .040 CATHODE All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. .036 45° .197
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880nm
ODD-45W
OD-880F
100mA
100Hz
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Untitled
Abstract: No abstract text available
Text: IR Emitter and Detector Product Data Sheet LTDL-RX16P03 Spec No.: DS50-2002-036 Effective Date: 10/23/2002 Revision: - LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
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LTDL-RX16P03
DS50-2002-036
BNS-OD-FC001/A4
LTDL-TX12P03
LTDL-RX16P03
BNS-OD-C131/A4
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Untitled
Abstract: No abstract text available
Text: IR Emitter and Detector Product Data Sheet LTE-3271T-A1 Spec No.: DS50-2003-036 Effective Date: 02/19/2004 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
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LTE-3271T-A1
DS50-2003-036
BNS-OD-FC001/A4
LTE-3271T-A1
BNS-OD-C131/A4
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Untitled
Abstract: No abstract text available
Text: Spice Model D40U18R Electrical Characteristics and Maximum Ratings Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (Io) (Ir) (Vf) 1 Cycle Repetitive Reverse Therm- Junction Surge Surge Recovery al
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D40U18R
50VDC
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GP2AP002S30F
Abstract: No abstract text available
Text: GP2AP002S30F < Attached Document > 【1】Functional Explanation 1-1 Abstract GP2AP002S30F makes successive binary decisions whether reflective object exists, which GP2AP002S30F irradiates IR light to and receives its reflection from, according to its internal algorithm. GP2AP002S30F controls
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GP2AP002S30F
GP2AP002S30F
940nm)
OP13039EN
Attachment-18
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Untitled
Abstract: No abstract text available
Text: D40FF18R D40U18R 1,800 V Rectifiers 0.05 A Forward Current 30 ns - 70 ns Recovery Time ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (Io) (Ir) (Vf)
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D40FF18R
D40U18R
D40U18R
50VDC
125mA,
250mA,
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Untitled
Abstract: No abstract text available
Text: Rectifier Die - D40 Series 50mA - 100mA • 30ns - 70ns • Hermetic ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number D 40F F 18R D40U18R Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (Io) (Ir) (Vf)
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100mA
D40U18R
50VDC
125mA,
250mA,
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213AT
Abstract: IL211AT IL212AT IL213AT VDE0884
Text: IL211AT/ 212AT/ 213AT Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package Features • Isolation Voltage, 3000 VRMS • Industry Standard SOIC-8A Surface Mountable Package • Compatible with Dual Wave, Vapor Phase and IR
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IL211AT/
212AT/
213AT
2002/95/EC
2002/96/EC
i179002
UL1577,
E52744
VDE0884)
D-74025
213AT
IL211AT
IL212AT
IL213AT
VDE0884
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led phototransistor pair
Abstract: t-1 ir phototransistor 213AT IL211AT IL212AT IL213AT VDE0884
Text: IL211AT/ 212AT/ 213AT Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package Features • Isolation Voltage, 3000 VRMS • Industry Standard SOIC-8A Surface Mountable Package • Compatible with Dual Wave, Vapor Phase and IR
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IL211AT/
212AT/
213AT
2002/95/EC
2002/96/EC
i179002
UL1577,
E52744
VDE0884)
08-Apr-05
led phototransistor pair
t-1 ir phototransistor
213AT
IL211AT
IL212AT
IL213AT
VDE0884
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C248
Abstract: No abstract text available
Text: NJ40+U1+W Näherungsschalter, induktiv 11 Komfortreihe 40 mm nicht bündig 128 67,5 LED s 55 M20x1,5 30 50 5,5 56 Schaltfrequenz f Hysterese H Spannungsfall Ud Kurzzeitstrom (20ms, 0,1Hz) Betriebsstrom IL Reststrom Ir Betriebsspannungsanzeige Schaltzustandsanzeige
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M20x1
C248
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2t2kf
Abstract: No abstract text available
Text: 2T2KF 2KV Diode, Axial Leaded Fast Recovery Rectifier Diodes POWER DISCRETES Description Features Quick reference data VR IR trr VF Low reverse leakage current Hermetically sealed. Good thermal shock resistance Low forward voltage drop Metallurgically bonded, CAT 1 Bond.
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150ns
2t2kf
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colour television schematics
Abstract: onkyo receiver y2 jvc ir receiver akai SANSUI teletech PHILIPS colour television schematic JVC receiver Salora LF0059 ir learning tv remote control schematics
Text: Z86L9900100ZC0 Evaluation Board for Z86L99 IR Controllers UM007401-0800 ZiLOG WORLDWIDE HEADQUARTERS ¥ 910 E. HAMILTON AVENUE ¥ CAMPBELL, CA 95008 TELEPHONE: 408.558.8500 ¥ FAX: 408.558.8300 ¥ www.ZiLOG.com This publication is subject to replacement by a later edition. To
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Z86L9900100ZC0
Z86L99
UM007401-0800
Z86L9900100ZCO
colour television schematics
onkyo receiver y2
jvc ir receiver
akai
SANSUI
teletech
PHILIPS colour television schematic
JVC receiver
Salora LF0059
ir learning tv remote control schematics
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IL211AT
Abstract: No abstract text available
Text: IL211AT/ 212AT/ 213AT VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package Features • Isolation Voltage, 3000 VRMS • Industry Standard SOIC-8A Surface Mountable Package • Compatible with Dual Wave, Vapor Phase and IR
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IL211AT/
212AT/
213AT
E52744
i179002
VDE0884)
IL212AT/
IL213AT
D-74025
IL211AT
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25Direct
Abstract: No abstract text available
Text: Direct Mount Terminals AKB 4 AKZ 2.5 ASK 1 for 5 x 20 and 5 x 25 mm Feed Through fuse cartridges Fuse if ir ««H ir I 4 AKZ 2.5 BB 4 10 pole assembly shown For illustration purposes. Available Options Version Beige PA Type AKB 4 PA Blue PA Part No. Type
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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Untitled
Abstract: No abstract text available
Text: Magnet Wire Terminals AMPLIVAR and MAG-MATE AMP Catalog 1307612 Revised 7-01 T ec h n ical In fo rm ation Circular Mil Area (CMA) and Diameter for Magnet Wires (AWG Wire Size Range 25-8) AW G B a r e W ir e B a re O ia . W ir e CM A B a re in. mm 25 24'/s
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Untitled
Abstract: No abstract text available
Text: FEATURES • DC - 3 G H z Frequency Range ■ 5 nSec Switching Speed ■ Non-Reflective ■ Low Insertion Loss ir ' ■ Ultra Low DC Power Consumption ■ Small Chip Size .029 x .036 ■ Plastic Package Available-P/N P35-4252-3 BOND PAD CONFIGURATION 1 G1
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P35-4252-3
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wire, UL 1213
Abstract: UL1371
Text: MTA-100 and MTA-156 Connectors and Headers; CST-100 Connectors and Headers and SL-156 Connectors Catalog 82056 Revised 1-96 MTA Wire Selection C r i t i c a l to th e s u c c e s s o f a w ir e - t o - b o a r d a p p lic a t io n is t h e p r o p e r w ir e s e le c t io n .
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MTA-100
MTA-156
CST-100
SL-156
TA-100
TA-156
wire, UL 1213
UL1371
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Untitled
Abstract: No abstract text available
Text: CARD EDGE CONNECTOR Spacing • r . •{.ir ' >! RING CODE Example Part Number 338 - 044 - 541 - 2 08 Series-Total Number of Contacts Contact Code-Contact Rows-Mounting Options-Series 338 Total Number of Contacts
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MFOE
Abstract: No abstract text available
Text: •701 TOX 9001 Gallium Aluminum Arsenide Light Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES This is a high radiance GaAIAs IR LED optimized for fiber optic applications requiring high power and fast response time. ABSOLUTE MAXIMUM RATINGS
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QL190)
953W375)
MFOE
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PDF
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Untitled
Abstract: No abstract text available
Text: TOX 9003 Gallium Aluminum Arsenide _ Light Emitting Diode DESCRIPTION FEATURES High radiance GaAIAs IR LED optimized for coupling to a variety of fibers. The unique LED chip design combines high power coupling with wide bandwidth operation. • • •
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G00D524
IH375)
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Untitled
Abstract: No abstract text available
Text: «701 T0X9008 Gallium Aluminum Arsenide Light Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES This is a high radiance GaAIAs IR LED optimized for fiber optic applications requiring high power and fast response time. Internal lensing for efficient fiber coupling
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T0X9008
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