led 905 660
Abstract: 660nm 3 lead led bicolor common anode
Text: epitex Opto-Device & Custom LED TOP IR LED SMT660/890-24 PRELIMINARY SMT660/890-24 High Performance Bi-color TOP LED with Lens Bi-color LED of SMT660/890-24 consists of AlGaAs LEDs mounted on the lead frame as TOP LED package with plastic ball lens. It emits a spectral band of radiation at 660nm and 890nm at anode common.
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SMT660/890-24
SMT660/890-24
660nm
890nm
660nm/890nm
led 905 660
3 lead led bicolor common anode
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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Schottky Diode 039 B34
Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-0809
Schottky Diode 039 B34
S4 84a DIODE schottky
MELF ZENER DIODE color bands blue
diode RGP 15J
sb050 d 331
s104 diode 87a
252 B34 SMD ZENER DIODE
SB050 transistor equivalent
MELF DIODE color bands
smd transistor P2D
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15J100
Abstract: DO-220AA SE15PJ JESD22-B102D J-STD-002B
Text: New Product SE15PB thru SE15PJ Vishay General Semiconductor Surface Mount ESD Protection Rectifiers FEATURES eSMPTM • Very low profile - typical height of 1.0 mm Series • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop
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SE15PB
SE15PJ
J-STD-020C,
DO-220AA
2002/95/EC
2002/96/EC
08-Apr-05
15J100
DO-220AA
SE15PJ
JESD22-B102D
J-STD-002B
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SE10PD
Abstract: DO-220AA JESD22-B102D J-STD-002B
Text: New Product SE10PB thru SE10PJ Vishay General Semiconductor Surface Mount ESD Protection Rectifiers FEATURES eSMPTM • Very low profile - typical height of 1.0 mm Series • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop
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SE10PB
SE10PJ
J-STD-020C,
DO-220AA
2002/95/EC
2002/96/EC
08-Apr-05
SE10PD
DO-220AA
JESD22-B102D
J-STD-002B
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Untitled
Abstract: No abstract text available
Text: New Product SE10PB thru SE10PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop
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SE10PB
SE10PJ
J-STD-020,
DO-220AA
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: New Product SE15PB thru SE15PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop
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SE15PB
SE15PJ
J-STD-020,
2002/95/EC
2002/96/EC
DO-220AA
J-STD-002
JESD22-B102
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: New Product SE10PB thru SE10PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop
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SE10PB
SE10PJ
J-STD-020,
2002/95/EC
2002/96/EC
DO-220AA
J-STD-002
JESD22-B102
08-Apr-05
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MARKING H3B
Abstract: DO-220AA JESD22-B102 J-STD-002
Text: New Product SE15PB thru SE15PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • • • • • • • Very low profile - typical height of 1.0 mm Ideal for automated placement Oxide planar chip junction Low forward voltage drop
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SE15PB
SE15PJ
J-STD-020,
2002/95/EC
2002/96/EC
DO-220AA
08-Apr-05
MARKING H3B
DO-220AA
JESD22-B102
J-STD-002
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Untitled
Abstract: No abstract text available
Text: New Product SE15PB thru SE15PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop
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SE15PB
SE15PJ
J-STD-020,
DO-220AA
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: New Product SE15PB thru SE15PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop
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SE15PB
SE15PJ
J-STD-020,
2002/95/EC
2002/96/EC
DO-220AA
J-STD-002
JESD22-B102
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product SE10PB thru SE10PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop
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SE10PB
SE10PJ
J-STD-020,
2002/95/EC
2002/96/EC
DO-220AA
J-STD-002
JESD22-B102
18-Jul-08
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J-STD-002
Abstract: MARKING H3B DO-220AA JESD22-B102
Text: New Product SE10PB thru SE10PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • • • • • • Ideal for automated placement Oxide planar chip junction Low forward voltage drop
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SE10PB
SE10PJ
J-STD-020,
2002/95/EC
2002/96/EC
DO-220AA
08-Apr-05
J-STD-002
MARKING H3B
DO-220AA
JESD22-B102
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MARKING H3B
Abstract: DO-220AA J-STD-002
Text: New Product SE15PB thru SE15PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop
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SE15PB
SE15PJ
J-STD-020,
DO-220AA
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
MARKING H3B
DO-220AA
J-STD-002
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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1N714
Abstract: No abstract text available
Text: Zener Regulator Diodes Part N um ber ZEN M icrosem i 1 Package D ivision O utline Type Mil S pec Microsemi Data P ow er i S heet ID W j Vz (V) Izt (mA) Zzt Z zk (C l) ( t i ) : (uA) IR VR Toi. (V) :(+/-%), 1N4772A S cottsdale DO-7 STD 2947 0.25 9.1 } 20 0
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DO-35
-213AA
DO-213AA
1N714
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mal100a
Abstract: MAL100 MAL100B
Text: MALI 00, A,B NPN SILICON PHOTOTRANSISTOR G EN ER A L D ESC R IPT IO N S: p h o t o t r a n s is t o r s . c u rre n t. t h e ir M A L I O O , A , B a r e t h r e e t e r m in a l N P N I t f e a t u r e s h i g h ill u m in a t i o n s e n s i t iv it y , f a s t
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T0-13L
MAL100,
MAL100A,
MAL100B
mal100a
MAL100
MAL100B
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Untitled
Abstract: No abstract text available
Text: PROJECT NO. . 1 8 7 MP -LO CK CONN' SIMILAR ITEM EDP NO. ENG. NO SD 3 5 1 8 9 - 0 2 7 * 8 s1 890270. dgn 7 5 A 3 1. 2. 3. 2 NOTES MATERI AL NYLON 66 35189-0270 3 5189-0271 COLOR : NATURAL A P P L I C A B L E TERMI NAL : F : : : UL94V-2 (UL94V-0) 35068-9*2
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UL94V-2)
UL94V-0)
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DA 3807
Abstract: No abstract text available
Text: 7 0 066 OPTION "M” CKT. SIZE EDP. NO. ENG. NO. 2 50-57-8902 70066-0351 3 50-57-8903 70066-0352 A 50-57-8904 70066-0353 5 50-57-8905 70066-0354 6 50-57-8906 70066-0355 7 50-57-8907 70066-0356 8 50-57-8908 70066-0357 9 50-57-8909 70066-0358 10 50 - 5 7 - 8 9 1 0
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10DB2P
10DB4P
10DB6P
180B6A
T35W
transistor kt 606A
65e9 transistor
sr 6863 D
2SC965
CS9011
sr1k diode
KT850
TRANSISTOR st25a
transistor 130001 8d
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LT829
Abstract: 8085A intel 8080 MCS intel 8295 8041A 8080
Text: m i e i APPLICATION NOTES AP-90 M ay 1980 An 8741 A/8041 A Digital Cassette Controller I Contents IN T R O D U C T IO N . 1 T H E C M -6 0 0 M IN I- D E K " .
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AP-90
LT829
8085A
intel 8080 MCS
intel 8295
8041A 8080
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Untitled
Abstract: No abstract text available
Text: Data Sheet 3968 DUAL FULL-BRIDGE PWM MOTOR DRIVER WITH BRAKE The A3968SA and A3968SLB are designed to bidirectionally control two dc motors. Each device includes two H-bridges capable of continuous output currents of ±650 mA and operating voltages to 30 V. Motor winding current
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A3968SA
A3968SLB
A3968SLB
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LFN ir
Abstract: IR LFN 3 pin
Text: I I I I I I ' NOTES: 1 2 3 * 5 terrat ^-»1*0.101 P R E S S -F IT HOLES HOLE DIAMETER P U T INS Si hBCT 'gr wimtfl- 2 in PlaTinö DIMENSIONS 0.8 5 - 0.B0 0.81 - Q j 6 0 .8 5 D R llU 0.025 MIN. 0-005 ~ I M S “ PLATING IN CONTACT AREA THICKNESS p la tin g eootQ.B urn GOLD
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04-VO
H8014Q
M0217
HW201
PB0227
S9025
LFN ir
IR LFN 3 pin
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Untitled
Abstract: No abstract text available
Text: 020201010000020185020101000002010002 FU JITSU PROGRAMMABLE SCHOTTKY 16384-BIT MB7138E-W READ ONLY MEMORY MB7138E-5K-WI Decem ber 1987 E d itio n 4 .0 SCHOTTKY 16384-BIT DEAP PROM 2048 WORDS X 8 BITS T h e F u jits u M B 7 1 3 8 -W is high speed s c h o ttk y T T L e le c tric a lly fie ld p ro g ra m
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16384-BIT
MB7138E-W
MB7138E-5K-WI
F24006S2C
B7138E-W
B7138E-SK-W
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