IR HEXFET PROBE SPECIFICATIONS Search Results

IR HEXFET PROBE SPECIFICATIONS Result Highlights (5)

Part	Manufacturer	Description
D82C284-8	Rochester Electronics LLC	Processor Specific Clock Generator, 16MHz, CMOS, CDIP18, CERDIP-18
D82C284-12	Rochester Electronics LLC	Processor Specific Clock Generator, 25MHz, CMOS, CDIP18, CERDIP-18
AM79865JC	Rochester Electronics LLC	Telecom Circuit,
AM79866AJC-G	Rochester Electronics LLC	SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20
AM7992BPC	Rochester Electronics LLC	Manchester Encoder/Decoder, PDIP24, PLASTIC, DIP-24

IR HEXFET PROBE SPECIFICATIONS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRFC11N50 Abstract: IRFB11N50A equivalent Text: PD - 94737 IRFC11N50AB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.52Ω	Original	IRFC11N50AB 12-Mar-07 IRFC11N50 IRFB11N50A equivalent	PDF
IRFP264n equivalent Abstract: IRFC264 Text: PD - 95820 IRFC264NB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Tape and Reel upon request , Chip Pack, and Sawn on Film G 250V RDS(on) = 60mΩ (max.) 6" Wafer S Electrical Characteristics Parameter V(BR)DSS RDS(on)	Original	IRFC264NB 100nA 12-Mar-07 IRFP264n equivalent IRFC264	PDF
Untitled Abstract: No abstract text available Text: PD - 94786 IRFCG20B HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film G 1000V RDS on = 11Ω (max.) 5" Wafer S Key Electrical Characteristics (TO-220 Packaged Part)c Parameter Description	Original	IRFCG20B O-220 12-Mar-07	PDF
IRFB18N50K equivalent Abstract: No abstract text available Text: PD - 94731 IRFC18N50KB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film G Key Electrical Characteristics TO-220 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description	Original	IRFC18N50KB O-220 100nA 12-Mar-07 IRFB18N50K equivalent	PDF
20ETS Abstract: IR180DM16CCB Text: Bulletin I0116J 09/00 IR180DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETS Series Major Ratings and Characteristics Parameters	Original	I0116J IR180DM16CCB 20ETS 12-Mar-07	PDF
40EPS Abstract: IR230DM16CCB Text: Bulletin I0117J rev. A 08/01 IR230DM16CCB STANDARD RECOVERY DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPS Series Major Ratings and Characteristics Parameters	Original	I0117J IR230DM16CCB 40EPS 12-Mar-07 IR230DM16CCB	PDF
WAFER International Rectifier Abstract: IR hexfet probe specifications 93825 Text: Preliminary Data Sheet I0146J 02/02 IR155DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 155 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 15ETS Series Major Ratings and Characteristics	Original	I0146J IR155DM16CCB 15ETS 12-Mar-07 WAFER International Rectifier IR hexfet probe specifications 93825	PDF
IR135DM16CCB Abstract: No abstract text available Text: Bulletin I0115J 09/00 IR135DM16CCB STANDARD RECOVERY DIODES Junction Size: Rectangular 135 x 100 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 8EWS.S Series Major Ratings and Characteristics Parameters	Original	I0115J IR135DM16CCB 12-Mar-07 IR135DM16CCB	PDF
how to test POWER MOSFET with digital multimeter Abstract: isl6236 sd1009 AN1272 irf7832 08053D105KAT2A 6TPD330M ISL6236EVAL2 HEXFEt Power MOSFET Design Guide H1046-00104-50V10 Text: ISL6236 Evaluation Kit – Chipset Application Application Note This application note describes the ISL6236 evaluation board intended for applications in notebook computers and other battery-powered devices. Description As notebook computer and battery-powered equipment	Original	ISL6236 ISL6236. AN1272 how to test POWER MOSFET with digital multimeter sd1009 irf7832 08053D105KAT2A 6TPD330M ISL6236EVAL2 HEXFEt Power MOSFET Design Guide H1046-00104-50V10	PDF
isl6236 schematic Abstract: how to test POWER MOSFET with digital multimeter AN1271 ISL6236 10w r33 irf7821 irf7832 ldo 5 pinout LDO Positive 08053D105KAT2A Text: ISL6236 Evaluation Kit – System Regulation Application Application Note This application note describes the ISL6236 evaluation board intended for applications in notebook computers and other battery-powered devices. Description As notebook computer and battery-powered equipment	Original	ISL6236 ISL6236. AN1271 isl6236 schematic how to test POWER MOSFET with digital multimeter 10w r33 irf7821 irf7832 ldo 5 pinout LDO Positive 08053D105KAT2A	PDF
ultrasonic pulse generator kit Abstract: Ultrasonic power generator schematic ultrasonic generator 20khz ISL6236IRZ onsemi marking smps 10w 5V ac power adapter for notebook schematic onsemi marking R12 marking P12 smps 5v 0.3A Text: ISL6236 Evaluation Kit – System Regulation Application Application Note November 29, 2006 General Description Features The ISL6236 dual step-down, switch-mode power-supply SMPS controller generates logic-supply voltages in battery-powered systems. The ISL6236 include two	Original	ISL6236 100mA AN1271 ultrasonic pulse generator kit Ultrasonic power generator schematic ultrasonic generator 20khz ISL6236IRZ onsemi marking smps 10w 5V ac power adapter for notebook schematic onsemi marking R12 marking P12 smps 5v 0.3A	PDF
6TPF330M9L Abstract: AN1456 40 TQFN 5x5 CAP7343 ISL62386 ISL62386HIEVAL1Z ISL62386LOEVAL1Z TP20 resistor 10k 10w Text: ISL62386LOEVAL1Z and ISL62386HIEVAL1Z Quad-Output Evaluation Board User Guide Application Note August 25, 2009 Introduction TABLE 2. ENABLE TRUTH TABLE Continued The ISL62386 evaluation boards demonstrates the performance of the ISL62386 quad-output voltage controller.	Original	ISL62386LOEVAL1Z ISL62386HIEVAL1Z ISL62386 ISL62386xxEVAL1Z AN1456 6TPF330M9L 40 TQFN 5x5 CAP7343 ISL62386HIEVAL1Z TP20 resistor 10k 10w	PDF
CAP7343 Abstract: 6TPF330M9L 2N7002-SOT23 d 1398 ISL62383 ISL62383HIEVAL1Z 78B03S SMCAP C5C27 SUD50N03-07 Text: ISL62383 Triple-Output Evaluation Board User Guide Application Note July 31, 2008 Introduction TABLE 2. ENABLE TRUTH TABLE The ISL62383 evaluation board demonstrates the performance of ISL62383 triple-output controller. The ISL62383 controller includes two pulse-width modulation	Original	ISL62383 100mA. ISL62383xxEVAL1Z AN1398 CAP7343 6TPF330M9L 2N7002-SOT23 d 1398 ISL62383HIEVAL1Z 78B03S SMCAP C5C27 SUD50N03-07	PDF
CAP7343 Abstract: 6TPF330M9L SUD50N03-07 irf7832 how to test POWER MOSFET with digital multimeter ISL62391 ISL62391HIEVAL1Z ISL62391LOEVAL1Z ISL62392 ISL62392HIEVAL1Z Text: ISL62391, ISL62392 Triple-Output Evaluation Board User Guide Application Note Introduction . The ISL62391 and ISL62392 evaluation boards demonstrate the performance of ISL62391 and ISL62392 triple-output controllers. The ISL62391 and ISL62392 controllers include	Original	ISL62391, ISL62392 ISL62391 100mA. ISL6239xxxEVAL1Z CAP7343 6TPF330M9L SUD50N03-07 irf7832 how to test POWER MOSFET with digital multimeter ISL62391HIEVAL1Z ISL62391LOEVAL1Z ISL62392HIEVAL1Z	PDF

ultrasonic generator 20khz Abstract: Ultrasonic generator schematic circuit AN1539 131-4353-00 Ultrasonic power generator schematic IR R8 MOSFET IRF7811AV irf7832 01UF 10UF Text: Application Note 1539 ISL8112EVAL1Z Evaluation Board Setup Procedure The ISL8112 is a dual-output Synchronous Buck controller with 2A integrated driver. It features high light load efficiency which is especially preferred in systems concerned with high efficiency in wide load	Original	ISL8112EVAL1Z ISL8112 ISL8112 ISL8112IRZ AN1539 ultrasonic generator 20khz Ultrasonic generator schematic circuit 131-4353-00 Ultrasonic power generator schematic IR R8 MOSFET IRF7811AV irf7832 01UF 10UF	PDF
6TPF330M9L Abstract: 2N7002-SOT23 MTP500X CAP7343 2N7002 SOT23 2N7002_SOT23 40 TQFN 5x5 BAT54S application note irf7832 sanyo c35 Text: ISL62381, ISL62382 Quad-Output Evaluation Board User Guide Application Note Introduction . The ISL62381 and ISL62382 evaluation boards demonstrate the performance of ISL62381 and ISL62382 Quad-output controllers. The ISL62381 and ISL62382 controller include	Original	ISL62381, ISL62382 ISL62381 ISL6238xxxEVAL1Z AN1396 6TPF330M9L 2N7002-SOT23 MTP500X CAP7343 2N7002 SOT23 2N7002_SOT23 40 TQFN 5x5 BAT54S application note irf7832 sanyo c35	PDF
DNP013 Abstract: isl62371 ISL6237IRZA isl6237 6TPD330M mosfet p28 how to test POWER MOSFET with digital multimeter p28 smd smd transistor P23 h2512 Text: ISL6237EVAL1 Evaluation Kit Application Note This application note describes the ISL6237 evaluation board intended for applications in notebook computers and other battery-powered devices. Description As notebook computer and battery-powered equipment complexity increases, higher levels of power management	Original	ISL6237EVAL1 ISL6237 ISL6237. AN1302 DNP013 isl62371 ISL6237IRZA 6TPD330M mosfet p28 how to test POWER MOSFET with digital multimeter p28 smd smd transistor P23 h2512	PDF
10BQ040 Abstract: EIA-541 IRF7811AV C1402 Text: PD - 96079A IRF7811AVUPbF IRF7811AVUPbF • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications • 100% RG Tested • Lead-Free	Original	6079A IRF7811AVUPbF IRF7811AV EIA-481 EIA-541. 10BQ040 EIA-541 C1402	PDF
irfp4332 Abstract: irfp4332 mosfet IRFB4332 Text: PD - 97139 IRFC4332B PDP MOSFET HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film 250V RDS on = 0.033Ω (max.) 6" Wafer G S Key Electrical Characteristics (TO-220 package)d Parameter	Original	IRFC4332B O-220 irfp4332 irfp4332 mosfet IRFB4332	PDF
FD059H06A5B Abstract: 31-2 MIL-HDBK-263 S1025 Text: I - 0512J rev. A FD059H06A5B FRED Die in Wafer Form z z 600V VF = 1.45V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage	Original	0512J FD059H06A5B 12-Mar-07 FD059H06A5B 31-2 MIL-HDBK-263 S1025	PDF
IRF540 n-channel MOSFET Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.	OCR Scan	QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R	PDF
HEXFET III - A new Generation of Power MOSFETs Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210 Text: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power	OCR Scan	AN-955. AN-986. AN-966. -250V AN-964D HEXFET III - A new Generation of Power MOSFETs irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210	PDF
IRFC9130 Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430 Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power	OCR Scan	AN-955. AN-986. 0-60V AN-964D IRFC9130 irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430	PDF
Untitled Abstract: No abstract text available Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION	OCR Scan		PDF

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IR HEXFET PROBE SPECIFICATIONS Search Results

IR HEXFET PROBE SPECIFICATIONS Result Highlights (5)

IR HEXFET PROBE SPECIFICATIONS Datasheets Context Search

IRFC11N50

IRFP264n equivalent

Untitled

IRFB18N50K equivalent

20ETS

40EPS

WAFER International Rectifier

IR135DM16CCB

how to test POWER MOSFET with digital multimeter

isl6236 schematic

ultrasonic pulse generator kit

6TPF330M9L

CAP7343

CAP7343

ultrasonic generator 20khz

6TPF330M9L

DNP013

10BQ040

irfp4332

FD059H06A5B

IRF540 n-channel MOSFET

HEXFET III - A new Generation of Power MOSFETs

IRFC9130

Untitled