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    IR MOSFETS Search Results

    IR MOSFETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

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    international rectifier power mosfets catalog

    Abstract: inverter SCR
    Text: Structural Blueprint for International Rectifier WWW site HOME Search Product Information Latest Updates About IR Contact IR Site Search Datasheets What's New Employment Product Information Center ir+ Part Number Search Short Form Catalog New Products Investor Relations


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FREDERICK COMPONENTS V C POW ER M O SF E T s VD S I D 25TC 1 0 0 °C Rd A (V ) s W ) C IS S td m *D (o h m s) (P F ) (A ) (W ) P ackage IR F 1 2 0 IR F 1 2 2 IR F 1 2 3 IR F 1 3 0 IR F 1 3 1 IR F 1 3 2 IR F 1 3 3 IR F 1 4 0 IR F 1 4 1 IR F 1 4 2 IR F 1 4 3


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: H A R R IS sem iconductor IR F R 4 2 0 , IR F R 42 1 , IR F R 4 2 2 , ¡R F U 4 2 0 , IR F U 4 2 1 , IR F U 4 2 2 2.2k and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.2A and 2.5A, 450V and 500V • High Input Impedance


    OCR Scan     		PDF

    IRF150R

    Abstract: IRF151R IRF152R IRF153R
    Text: Rugged Power MOSFETs. File Num ber 2002 IR F150R , IR F15 1 R , IR F 152R , IR F153R Avalanche Energy Rated N-Channel Power MOSFETs 3 3 A an d 4 0 A , 6 0 V -1 0 0 V ros on = 0 .0 5 5 0 an d 0 .0 8 fi N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF150R, IRF151R, IRF152R, IRF153R 0V-100V 92cs-42c9s IRF152R IRF153R IRF150R IRF151R

    Untitled

    Abstract: No abstract text available
    Text: H A R R IS sem iconductor IR F 9230, IR F 9231, IR F9232, IR F 9233 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs J a n u a ry 1998 Features Description • -5.5A a n d -6 .5 A ,-1 5 0 V a n d -2 0 0 V • High Input Impedance


    OCR Scan     		PDF F9232, -150V -200V, IRF9230, IRF9231, RF9232, IRF9233 RF9231,

    Untitled

    Abstract: No abstract text available
    Text: HARRIS s e m ic o n d u c to r IR F R 1 2 0 , IR F R 1 2 1 , IR F U 1 2 0 , IR F U 1 2 1 8.4A, 80V AND 100V, 0.27 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8.4A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF typesRFU121 IRFR120, RFR121, IRFU120, RFU121

    F9232

    Abstract: No abstract text available
    Text: IR F 9230, IR F9231 IR F 9232, IR F9233 HARRIS Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Features Package T 0 -2 0 4 A A BOTTOM VIEW • - 5 .5 A a n d - 6 .5 A , - 1 5 0 V a n d - 2 0 0 V • r D S O N = 0 . 8 0 Î Î a n d 1 . 2 f i SOURCE


    OCR Scan     		PDF F9231 F9233 92CS-4? 92CS-43305 F9232

    IRFP340

    Abstract: IRFP-341 IRFP341
    Text: h a r r is s e m ic o n d u c to r IR F P 3 4 0 , IR F P 3 4 1 , IR F P 3 4 2 , IR F P 3 4 3 11A and 8.7A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 11A and 8.7A, 350V and 400V • Linear Transfer Characteristics


    OCR Scan     		PDF TA17424. IRFP340, IRFP341, IRFP342, IRFP343 IRFP343 IRFP340 IRFP-341 IRFP341

    IRF9511

    Abstract: IRF9513 IRF9510 IRF9512 100-C
    Text: Rugged Power MOSFETs File Number 2214 IR F9510, IR F 9 5 1 1 IR F9512, IR F9513 Avalanche-Energy-Rated P-Channel Power MOSFETs -2.5A, a n d -3.0A, -60V a n d -100V rDsion = 1.20 a n d 1.60 t e r m in a l d ia g r a m Feature*: o • S in g le pulse a va lan ch e e n e rg y rated


    OCR Scan     		PDF IRF9510, IRF9511 IRF9512, IRF9513 -100V 92CS-43262 IRF9511, IRF9512and IRF9513 IRF9511 IRF9510 IRF9512 100-C

    Untitled

    Abstract: No abstract text available
    Text: 4 3 0 5 2 7 1 □ □ 5 4 5 ci? tBT • H a r r is HAS IR F F 9120, IR F F 9121 IR F F 9122, IR F F 9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Features Package T 0 -2 0 5 A F • -3.5 A and -4A , -8 0 V and -1 0 0 V BOTTOM VIEW • rDS ON = o .e o n and 0.80 H


    OCR Scan     		PDF IRFF9120, IRFF9121, IRFF9122 IRFF9123

    Untitled

    Abstract: No abstract text available
    Text: • 43Q2E71 0GS3Taa 2 H A R IR IS 3tj2 ■ HAS IR F 520/521/522/523 IR F520R/521R /522R /523R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -22 0 A B • 8A and 9.2A, 80V - 100V TOP VIEW • rDS °n) = 0.27S1 and 0 .3 6 fl


    OCR Scan     		PDF 43Q2E71 F520R/521R /522R /523R 1RF523 FIGURE14b.

    irf*234 n

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 40E » • 430 2 2 7 1 GOBM'RQH b « H A S 33 HARRIS IR F234, IRF235 IR F236, IR F237 August 1991 N-Channel Power MOSFETs Avalanche-Energy Rated l\ Features Package T 0 -2 0 4 A A • 8.1A and 6 .SA, 2 7 5 V - 2 5 0V • rD S o n =


    OCR Scan     		PDF IRF235 IRF234, IRF235, IRF236, IRF237 RF234, irf*234 n

    IFU120

    Abstract: fu120 IFU-121 fr120 irfu121 Harris IRFR120 IRFU N-Channel Power MOSFETs a 4556
    Text: m HARRIS IR FR 120/1R F R 121 IR F U 1 2 0 /IR F U 1 2 1 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Packages Features T 0 -2 S 1 A A TOP VIEW • 8.4A, 80V and 100V • rDS on = 0 .2 7 0 3 SOURCE • Single Pulse Avalanche Energy Rated DRAIN


    OCR Scan     		PDF 120/1R O-252AA IRFR120, IRFR121, IRFU120, IRFU121 IFU120 fu120 IFU-121 fr120 Harris IRFR120 IRFU N-Channel Power MOSFETs a 4556

    f9640

    Abstract: IRF9640 IRF9640 complementary IRF630 complementary IRF630 MOTOR CONTROL CIRCUIT IRF9640 audio irf9640 mosfet C368 IRF9642 IRF9643
    Text: HE D | MñSSMSa GOGûbia 2 I Data Sheet No. PD-9.422A T - ï 'ÿ 'L 3 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IO R IRF964Q IR FS 64Ì FV-CHAIMIMEL 2 0 0 VOLT POWER MOSFETs IR F9642 IR F0643 -2 0 0 Volt, 0.5 Ohm HEXFET T0-220AB Plastic Package


    OCR Scan     		PDF T0-220AB IRF9640, IRF9641, IRF9642, IRF9643 T-39-23 C-372 f9640 IRF9640 IRF9640 complementary IRF630 complementary IRF630 MOTOR CONTROL CIRCUIT IRF9640 audio irf9640 mosfet C368 IRF9642

    Untitled

    Abstract: No abstract text available
    Text: Products From IR Table of Contents Page HEXFET Power MOSFETs . 282 IGBT .


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 430B271 0054552 47D • h a f r r i s HAS IR F9520, IRF9521 IR F 9 5 22 , IR F 9 5 23 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Package Features TO -220A B • -5 A and -6 A , -8 0 V and -1 0 0 V TOP VIEW • rD S O N = 0 . 6 f l a n d 0 . 8 i l


    OCR Scan     		PDF 430B271 F9520, IRF9521 -220A IRF9520, IRF9521, IRF9522 IRF9523 IRF9522, IRF9523

    IRF22

    Abstract: R/Detector/"detect18 ic"/"CD"/F223
    Text: IR F220, IR F 22 1 IR F222, IRF22 3 2 HARRIS N -Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Features Package TO -20 4 A A BOTTOM VIEW • 4.0A and 5.0A, 150V - 200V • rDS(on = 0 .8 0 and 1 .2 fi • SOA is Power-Dissipation Limited


    OCR Scan     		PDF IRF22 IRF220, IRF221, IRF222, IRF223 IRF222. IRF223 R/Detector/"detect18 ic"/"CD"/F223

    423R

    Abstract: f423 IR 423
    Text: 33 HARRIS IR F F420/421/422/423 IR FF420R/421 R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0(1 and 4.0fi • Singla Pulsa Avalancha Energy Rated* GATE SOURCE


    OCR Scan     		PDF F420/421/422/423 FF420R/421 /422R /423R O-205AF IRFF420, IRFF421, IRFF422, IRFF423 IRFF420R, 423R f423 IR 423

    ifr110

    Abstract: No abstract text available
    Text: IR F R 1 1 0 , IR F U 1 1 0 Semiconductor D ata S h eet 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the


    OCR Scan     		PDF 540i2 IRFR110, IRFU110 ifr110

    j332

    Abstract: J333 g559 IRFJ330 IRFJ331 IRFJ332 IRFJ333 9405A w sa 45a diode
    Text: h e D I MassMsa a c m s a o a | Data Sheet No. PD-9.405A IN TERNATI ONAL RE CT IF IER r IN T E R N A T IO N A L H E X F E T - 3 R E C T IF IE R ? - T 6 ? & R IR F J 3 3 0 T R A N S IS T O R S IR F J 3 3 1 N-GHANNEL POWER MQSFETs IR F J 3 3 2 IR F J 3 3 3


    OCR Scan     		PDF mass452 G-561 IRFJ330, IRFJ331, IRFJ332, IRFJ333 T-39-09 75BVoss G-562 j332 J333 g559 IRFJ330 IRFJ331 IRFJ332 9405A w sa 45a diode

    Untitled

    Abstract: No abstract text available
    Text: •I 4302271 00S415S 33 HARRIS SSb ■ H AS IR FF230/231/232/233 IR FF230R /231R /232R /233R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -205A F • 4.5A and 5.5A, 150V - 200V • rDS on = 0 .4 0 and 0.6 0 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF 00S415S FF230/231/232/233 FF230R /231R /232R /233R -205A IRFF230, IRFF231, IRFF232,

    9517A

    Abstract: irf 4110 irfu9022 IRFR9020 IRFR9022 IRFU9020 7n20 LG 57A 1U40
    Text: HE 0 | 4Û55452 QQQûaib ü T-37-25 Data Sheet No. PD-9.517A | INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFRS020 IR F R 9 0 S S IR F U 9 0 2 0 IR F U 9 Q S 2 P -C H A N N E L Product Summary -50 Volt, 0.20 Ohm HEXFET


    OCR Scan     		PDF T-37-25 IRFR9020, IRFR9022, IRFU9020, IRFU9022 T-37-25 IRFR9020TR 9517A irf 4110 IRFR9020 IRFR9022 IRFU9020 7n20 LG 57A 1U40

    FP450

    Abstract: 451R mosfet 4532 IRFP452 4532 MOSFET
    Text: 2 3 H A R R IS IR FP450/451/452/453 IR FP450R /451R /452R /453R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 • 12A and 14A, 450V - 500V TOP VIEW • rDS on = 0 .4 ii and 0 .5 0 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF FP450/45 FP450R /451R /452R /453R IRFP450, IRFP451, IRFP452, IRFP453 IRFP450R, FP450 451R mosfet 4532 IRFP452 4532 MOSFET

    F730R

    Abstract: No abstract text available
    Text: • tJ303271 [1054053 ÛT2 g HARRIS ■ HAS IR F730/731/732/733 IR F730R /731R /732R /733R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.SA and S.5A, 350V - 400V TOP VIEW • rp s (o n = 1 -0 0 and 1 .5 ÎÏ


    OCR Scan     		PDF tJ303271 F730/731/732/733 F730R /731R /732R /733R IBF730, IRF731, IRF732, IRF733