transistor P397
Abstract: transistor P479 P449 p331 TRANSISTOR transistor k38 v6 transistor P519 am2 am3 p055 power transistor f AJ38 w38 transistor
Text: MSX532 Matrix Switch Preliminary Data Sheet Features Description • • The MSX family of SRAM-based bit-oriented switching devices offers flow-through NRZ datarates of 300Mbps and registered clock frequencies of 200MHz. The 532 I/O Buffers IOBs are individually configured. The IOBs can be connected
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MSX532
200MHz
300Mbps
MKT-MSX532-DS
transistor P397
transistor P479
P449
p331 TRANSISTOR
transistor k38 v6
transistor P519
am2 am3
p055 power transistor
f AJ38
w38 transistor
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Untitled
Abstract: No abstract text available
Text: CMPWR025 CALIFORNIA MICRO DEVICES 500mA DUAL INPUT SmartOR POWER SWITCH Features Automatically selects VCC1 OR VCC2 input source Integrated switches 0.2Ω typ deliver 500mA output Operating supply range from 2.8V to 5.5V Glitch-free output during supply switching transitions
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CMPWR025
500mA
AP-211
CMPWR025
200mV.
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P521 G
Abstract: P452 p477 p520 p508 p364 p372 p421 data sheet P439 IR P116
Text: MSX532 Matrix Switch Preliminary Data Sheet Features • SRAM-based, in-system programmable • 532 Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output
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MSX532
MKT-MSX532-DS
P521 G
P452
p477
p520
p508
p364
p372
p421 data sheet
P439
IR P116
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VNH100N04
Abstract: No abstract text available
Text: VNH100N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE V clamp R DS on I lim VNH100N04 42 V 0.012 Ω 100 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN
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VNH100N04
O-218
VNH100N04
O-218
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VNH100N04
Abstract: No abstract text available
Text: VNH100N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE V clamp R DS on I lim VNH100N04 42 V 0.012 Ω 100 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN
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VNH100N04
O-218
VNH100N04
O-218
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VNH100N04
Abstract: No abstract text available
Text: VNH100N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE V clamp R DS on I lim VNH100N04 42 V 0.012 Ω 100 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN
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VNH100N04
O-218
VNH100N04
O-218
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vnh70n07
Abstract: No abstract text available
Text: VNH70N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE VNH70N07 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V clamp R DS on I lim 70 V 0.015 Ω 70 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN
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VNH70N07
O-218
VNH70N07
O-218
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VNH50N04
Abstract: No abstract text available
Text: VNH50N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE VNH50N04 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V clamp R DS on I lim 40 V 0.012 Ω 50 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN
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VNH50N04
O-218
VNH50N04
O-218
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vnh70n07
Abstract: No abstract text available
Text: VNH70N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE VNH70N07 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V clamp R DS on I lim 70 V 0.015 Ω 70 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN
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VNH70N07
O-218
VNH70N07
O-218
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VNH50N04
Abstract: No abstract text available
Text: VNH50N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE VNH50N04 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V clamp R DS on I lim 40 V 0.012 Ω 50 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN
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VNH50N04
O-218
VNH50N04
O-218
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Untitled
Abstract: No abstract text available
Text: IRFP450 N - CHANNEL 500V - 0.33Í2 - 14A - TO-247 PowerMESH MOSFET TYPE IR F P 4 5 0 V R d s s 500 V d Id S o ii < 0.4 Q. 14 A • TYPICAL RDS(on) = 0.33 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED
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IRFP450
O-247
P025P
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50n04
Abstract: 50N04A
Text: r z 7 Ä T# S G S R - T H O M S O N Î L i M ! 0 gS V N W 50N04A ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp R D S (o n 11i m VN W 50N 04A 42 V 0.0 12 Î2 50 A . LINEAR CURRENT LIMITATION . THERMAL SHUT DOWN . SH O R TC IR C U IT PROTECTION
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50N04A
O-247
50N04A
50n04
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transistor f151
Abstract: tms 374 biss 0001 je 243 JE 33 p626 PSX128B PSX96B I-CUBE 51P124
Text: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used
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PSX128B
PSX96B.
0IIIG1152
transistor f151
tms 374
biss 0001
je 243
JE 33
p626
PSX96B
I-CUBE
51P124
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Untitled
Abstract: No abstract text available
Text: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used
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PSX160,
PSX128B
PSX96B.
has27
DDD11SG
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sot62
Abstract: BUW14
Text: N AUER PHILIPS/DISCRETE bTE T> m bbSBTBl 0 C]E05b 3 =530 • APX P hilips S em roduct sp e cifica tio n Silicon diffused power transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in
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DQE65b3
BUW14
sot62
BUW14
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MOR56
Abstract: mot schematic M0P41 compal m0r11 AM251S EL 817 c321 SS145 SS97 ss129
Text: Model Name: N20U PCB No: LA542 Revision: 1A Model Name: N20U2 PCB No: LA542 Revision:3A N20U BLOCK DIA GRAM CPU DECOUPING PULL UP/FDOW N GEYSERVILLE Coppermine Geyserville uBGA2/uPGA2 CPU CLOCK ICS9248-92 PAGE 11 PAGES PAGE 3,4 LCD & CRT PC I/ISA PULL UP/DOWN
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LA542
N20U2
ICS9248-92
443BX
32/64MB
LA-642
MOR56
mot schematic
M0P41
compal
m0r11
AM251S
EL 817 c321
SS145
SS97
ss129
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12f s091
Abstract: T1B10 pdcr 900 "XS 101" ocr6 tlcs90 8e s085 eeprom s130 RC1B S091
Text: TO SH IBA UNDER DEVELOPMENT TMP95CW86/TMP95FW86 CMOS 16-Bit Microcontroller TMP95CW86F / TMP95FW86F TMP95CW86DF / TMP95FW86DF 1. Outline and Features The TMP95CW86 and TMP95FW86 are high-speed, high-perform ance 16-bit microcontrollers developed for medium- to large-scale control applications.
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TMP95CW86/TMP95FW86
16-Bit
TMP95CW86F
TMP95FW86F
TMP95CW86DF
TMP95FW86DF
TMP95CW86
TMP95FW86
12f s091
T1B10
pdcr 900
"XS 101"
ocr6
tlcs90
8e s085
eeprom s130
RC1B
S091
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SP0256-AL2
Abstract: SPO256 SPR016 gg2j Radio Shack spr016 sp0256al2 tandy spr016 SP0256 sound phase checker SPO-256
Text: r a ï b a c k D oc. # 17517 Catalog Number 276-1784 TECHNICAL DATA AN EXCLUSIVE RADIO SHACK SERVICE TO THE EXPERIMENTER SP0256 NARRATO R SPEECH PROCESSOR Features Tim • • * • * * • RÔM D VDD C 7 S&Y c 6 DS^C 9 w c ■0 A7 c I Stfl OUT c 12 AÔC l ì
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SP0256
SP0256
290MS
250MS
160MS
280MS
300MS
240MS
100MS
240M5
SP0256-AL2
SPO256
SPR016
gg2j
Radio Shack spr016
sp0256al2
tandy spr016
sound phase checker
SPO-256
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1P137
Abstract: transistor 1p137 HRC 2J 225 HRC 2J 225 ratings p055 TRANSISTOR DATASHEET P06368 P058l P057C Z1P041 P124l
Text: "É sSs«t ! * I-C u b e PSX Family Data Sheet F eatures D e s c r ip t io n • SRAM-based, in-system programmable The PSX160, PSX128B and PSX96B are SRAM-based bus • Switch Matrix oriented switches with 160, 128 and 96 l/Os respectively. The devices are manufactured using a 0.6|jm CMOS process and
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133MHz
1P137
transistor 1p137
HRC 2J 225
HRC 2J 225 ratings
p055 TRANSISTOR DATASHEET
P06368
P058l
P057C
Z1P041
P124l
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Untitled
Abstract: No abstract text available
Text: VB927 VB927FI HIGH VOLTAGE IGNITION COIL DRIVER POWER 1C . . . . NO EXTERNAL COMPONENT REQUIRED INTEGRATED HIGH VOLTAGE CLAMP COIL CURRENT LIMIT INTERNALLY SET HIGH RUGGEDNESS DESCRIPTION The VB927 is a monolithic high voltage integrated circuit made using STM VIPower Technology,
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VB927
VB927FI
VB927
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YBs transistor
Abstract: BUK437-400B
Text: PHILIPS INTERNATIONAL bSE D O 7110fl5b DDbBTlb 5^b « P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110fl5b
BUK437-400B
VA62b
00b3T20
YBs transistor
BUK437-400B
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BUK457-500A
Abstract: BUK457-500B
Text: N AMER PHILIPS/D ISCR ETE SSE D • bbSBTBl 00S05SS 2 ■ PowerMOS transistor BUK457-500A BUK457-500B V -2 ? -l3 GENERAL DESCRIPTION SYMBOL CO O > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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00S05SS
BUK457-500A
BUK457-500B
BUK457
-500A
-500B
T--39--13
BUK457-500B
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AP-211
Abstract: CMPWR025 CMPWR025S P025 4802V
Text: A CALIFORNIA MICRO DEVICES CMPWR025 ► ► ► ► ► 500mA DUAL INPUT SmartOR POWER SWITCH Pin Diagram Features • • • • • • • A utom atically selects VCC1 OR VCC2 in p u t source Integrated switches 0.2Q typ deliver 500m A o u tp u t
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CMPWR025
500mA
AP-211
AP-211
100mV
500mV
CMPWR025
CMPWR025S
P025
4802V
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VNW50N04 equivalent
Abstract: SGS-Thomson mosfet
Text: f= T SGS-THOMSON ^ T # MDeBSilLiCT^OÖÜlOei VNW50N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNW50N04 . . . • . ■ . . . . Vclamp RDS on him 42 V 0.012 Q 50 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP
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VNW50N04
VNW50N04
O-247
VNW50N04 equivalent
SGS-Thomson mosfet
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