IRF GATE LOGIC
Abstract: AN-994 IRFR120 IRLR024N IRLU024N R120 U120 HEXFET POWER MOSFET IRF irf 210a
Text: PD - 95551B IRLR014NPbF IRLU014NPbF l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A
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95551B
IRLR014NPbF
IRLU014NPbF
IRLR024N)
IRLU024N)
EIA-481
EIA-541.
EIA-481.
IRF GATE LOGIC
AN-994
IRFR120
IRLR024N
IRLU024N
R120
U120
HEXFET POWER MOSFET IRF
irf 210a
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1501a
Abstract: IRFZ24N IRFIZ24N irf 480
Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier
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IRFIZ24N
O-220
1501a
IRFZ24N
IRFIZ24N
irf 480
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IRFIZ24N
Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier
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IRFIZ24N
O-220
IRFIZ24N
1501a
IRFZ24N
irf 480
irf 044 mosfet
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Untitled
Abstract: No abstract text available
Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D VDSS = 55V l RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier
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IRFIZ24N
O-220
insulatin245,
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Untitled
Abstract: No abstract text available
Text: PD - 95551 IRLR/U014NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description
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IRLR/U014NPbF
IRLR024N)
IRLU024N)
EIA-481
EIA-541.
EIA-481.
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diode 9508-1
Abstract: No abstract text available
Text: PD- 95081 IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A
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IRLR024NPbF
IRLU024NPbF
IRLR024N)
IRLU024N)
IRLR/U024NPbF
O-252AA)
EIA-481
EIA-541.
EIA-481.
diode 9508-1
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IRFR5305
Abstract: IRFR P-Channel MOSFET IRFU5305PbF IRFU5305
Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A
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PD-95025A
IRFR5305PbF
IRFU5305PbF
IRFR5305)
IRFU5305)
O-252AA)
EIA-481
EIA-541.
EIA-481.
IRFR5305
IRFR P-Channel MOSFET
IRFU5305PbF
IRFU5305
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IRFR5305
Abstract: IRFU5305 irf5305 IRFR5305PBF IRFU5305PbF
Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A
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PD-95025A
IRFR5305PbF
IRFU5305PbF
IRFR5305)
IRFU5305)
moun16
EIA-481
EIA-541.
EIA-481.
IRFR5305
IRFU5305
irf5305
IRFR5305PBF
IRFU5305PbF
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Untitled
Abstract: No abstract text available
Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A
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PD-95025A
IRFR5305PbF
IRFU5305PbF
IRFR5305)
IRFU5305)
EIA-481
EIA-541.
EIA-481.
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IRF (10A) 55V
Abstract: AN-994 IRFU120 IRLR2705 IRLU2705 IRLZ34N R120 U120 3F10
Text: PD - 95062A l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2705 Straight Lead (IRLU2705) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free IRLR2705PbF IRLU2705PbF HEXFET Power MOSFET D VDSS = 55V
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5062A
IRLR2705)
IRLU2705)
IRLR2705PbF
IRLU2705PbF
O-252A
O-252AA)
EIA-481
EIA-541.
EIA-481.
IRF (10A) 55V
AN-994
IRFU120
IRLR2705
IRLU2705
IRLZ34N
R120
U120
3F10
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mosfet IRFZ34N
Abstract: U120 AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120
Text: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier
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5550A
IRFR4105PbF
IRFU4105PbF
IRFR4105)
IRFU4105)
O-252AA)
EIA-481
EIA-541.
EIA-481.
mosfet IRFZ34N
U120
AN-994
IRFR4105
IRFU120
IRFU4105
IRFZ34N
R120
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Untitled
Abstract: No abstract text available
Text: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier
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5550A
IRFR4105PbF
IRFU4105PbF
IRFR4105)
IRFU4105)
EIA-481
EIA-541.
EIA-481.
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IRF (10A) 55V
Abstract: IRLR2705 AN-994 IRFU120 IRLU2705 IRLZ34N R120 U120 IRF Power MOSFET code marking
Text: PD - 95062A l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2705 Straight Lead (IRLU2705) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free IRLR2705PbF IRLU2705PbF HEXFET Power MOSFET D VDSS = 55V
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5062A
IRLR2705)
IRLU2705)
IRLR2705PbF
IRLU2705PbF
O-252A16
EIA-481
EIA-541.
EIA-481.
IRF (10A) 55V
IRLR2705
AN-994
IRFU120
IRLU2705
IRLZ34N
R120
U120
IRF Power MOSFET code marking
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irf power mosfet
Abstract: IRF (10A) 55V AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120 U120 IRFZ3
Text: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier
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5550A
IRFR4105PbF
IRFU4105PbF
IRFR4105)
IRFU4105)
EIA-481
EIA-541.
EIA-481.
irf power mosfet
IRF (10A) 55V
AN-994
IRFR4105
IRFU120
IRFU4105
IRFZ34N
R120
U120
IRFZ3
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irf 44 n
Abstract: 1329B IRLIZ34N IRLZ34N
Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description
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1329B
IRLIZ34N
O-220
irf 44 n
1329B
IRLIZ34N
IRLZ34N
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Equivalent IRF 44
Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34
Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description
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1329B
IRLIZ34N
O-220
Equivalent IRF 44
IRLIZ34N
1329B
IRLZ34N
e4019
mosfet irf 150
irliz34
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Untitled
Abstract: No abstract text available
Text: PD- 95084 IRLR/U2905PbF l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2905 Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.027Ω
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IRLR/U2905PbF
IRLR2905)
IRLU2905)
O-252AA)
EIA-481
EIA-541.
EIA-481.
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Untitled
Abstract: No abstract text available
Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description
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1329B
IRLIZ34N
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.016Ω
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5369A
IRFR2405PbF
IRFU2405PbF
IRFR2405)
IRFU2405)
EIA-481
EIA-541.
EIA-481.
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IRF 260 N
Abstract: rectifier diode assembly diode 1600 rectifier HEXFET Power MOSFET IRF (10A) 55V IRF (10A) 55V P IRF N-Channel Power MOSFETs AN-994 IRFR2405 IRFU120
Text: PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.016Ω
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5369A
IRFR2405PbF
IRFU2405PbF
IRFR2405)
IRFU2405)
EIA-481
EIA-541.
EIA-481.
IRF 260 N
rectifier diode assembly
diode 1600 rectifier
HEXFET Power MOSFET
IRF (10A) 55V
IRF (10A) 55V P
IRF N-Channel Power MOSFETs
AN-994
IRFR2405
IRFU120
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1530A
Abstract: f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44
Text: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A
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IRFI9Z34N
O-220
1530A
f1010e
IRF 10A 55V
irf 9246
I840G
IRF9Z34N
IRFI9Z34N
IRF MOSFET 10A P
irf power mosfet
Equivalent IRF 44
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1530A
Abstract: IRF9Z34N IRF high current p-channel irf 9246 IRFI9Z34N I840G MOSFET IRF 630 F1010E
Text: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A
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IRFI9Z34N
O-220
1530A
IRF9Z34N
IRF high current p-channel
irf 9246
IRFI9Z34N
I840G
MOSFET IRF 630
F1010E
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IRF (10A) 55V
Abstract: AN-994 IRFR2405 IRFU120 IRFU2405 R120 U120 IRFU2405PBF
Text: PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.016Ω
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5369A
IRFR2405PbF
IRFU2405PbF
IRFR2405)
IRFU2405)
O-252AA)
EIA-481
EIA-541.
EIA-481.
IRF (10A) 55V
AN-994
IRFR2405
IRFU120
IRFU2405
R120
U120
IRFU2405PBF
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IRF9Z34N
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD 9.2001 IRF9Z34N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.10Ω
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IRF9Z34N
O-220
IRF9Z34N
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