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    IRF 2010 Search Results

    IRF 2010 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-213UHFMX20-100 Amphenol Cables on Demand Amphenol CO-213UHFMX20-100 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 100 ft Datasheet
    CO-213NTYPEX2-010 Amphenol Cables on Demand Amphenol CO-213NTYPEX2-010 Type N Male to Type N Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 10ft Datasheet
    CO-058RASMAX2-010 Amphenol Cables on Demand Amphenol CO-058RASMAX2-010 SMA Right Angle Male to SMA Right Angle Male (RG58) 50 Ohm Coaxial Cable Assembly 10ft Datasheet
    DO2010-152MLC Coilcraft Inc General Purpose Inductor, 1.5uH, 20%, 1 Element, Ferrite-Core, SMD, 0808, ROHS COMPLIANT Visit Coilcraft Inc
    DO2010-224MLC Coilcraft Inc General Purpose Inductor, 220uH, 20%, 1 Element, Ferrite-Core, SMD, 0808, ROHS COMPLIANT Visit Coilcraft Inc

    IRF 2010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CU-114 APRIL 2, 2015 TYPE 85UVF/IRF Integrated Flame Scanner with Internal Flame Relay exida FMEDA SIL3 SEE TABLE 1 ON PAGE 3 SEE TABLE 1 ON PAGE 3 DESCRIPTION The Fireye Phoenix type 85UVF/IRF flame scanners are microprocessor based devices utilizing a solid


    Original     		PDF CU-114 85UVF/IRF 85UVF/IRF

    IPG YLD-10

    Abstract: No abstract text available
    Text: HV-IMPULSE GENERATOR IPG 1218 IPG 1012 IPG 605 1.2 / 50 µs 0.25 kV - 12 kV 0.20 kV - 10 kV 0.20 kV - 6.25 kV Surge testing acc to: IEC 60664, VDE 0110, VDE 0411, VDE 0420 IEC 60335 : 2010 etc. Insulation test of inductors and coils Picture: incl. Option PA 503


    Original     		PDF IPG1218 D-76297 IPG YLD-10

    AN-994

    Abstract: MOSFET IRF 380
    Text: PD - 95936C IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 95936C IRFB4610PbF IRFS4610PbF IRFSL4610PbF O-262 O-220AB EIA-418. AN-994 MOSFET IRF 380

    IRF 535

    Abstract: IRF 100A IRF 2004 mosfet 23 Tsop-6 irf 30A IRF5800 IRF5850 SI3443DV TSOP6 Marking Code 17
    Text: IRF5800PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


    Original     		PDF IRF5800PbF IRF5802 IRF 535 IRF 100A IRF 2004 mosfet 23 Tsop-6 irf 30A IRF5800 IRF5850 SI3443DV TSOP6 Marking Code 17

    Untitled

    Abstract: No abstract text available
    Text: PD-95262 IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from


    Original     		PDF PD-95262 IRF5803PbF OT-23.

    IRf 334

    Abstract: No abstract text available
    Text: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from


    Original     		PDF IRF5804PbF OT-23. IRf 334

    UPD7810 assembler

    Abstract: UPD7810 IRF 3203 78C10 uPD78C14 MKL series nec uPD7811 nec 7810 application notes 78C11 PA-78CP14
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95936C IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 95936C IRFB4610PbF IRFS4610PbF IRFSL4610PbF O-262 O-220AB EIA-418.

    TSL2771

    Abstract: sensor LDR curve ldr sensor FOR LIGHT SENSING TSL27711FN TSL27711 TSL27713 TSL27713FN ldr 1000 nm LDR sensor circuit and implementation TAOS100A
    Text: TSL2771 LIGHT-TO-DIGITAL CONVERTER with PROXIMITY SENSING r r TAOS100A − FEBRUARY 2010 Features PACKAGE FN DUAL FLAT NO-LEAD TOP VIEW D Ambient Light Sensing and Proximity Detection in Single Device D Ambient Light Sensing (ALS) − − − − Approximates Human Eye Response


    Original     		PDF TSL2771 TAOS100A TSL2771 sensor LDR curve ldr sensor FOR LIGHT SENSING TSL27711FN TSL27711 TSL27713 TSL27713FN ldr 1000 nm LDR sensor circuit and implementation

    MKL series

    Abstract: uPD78C14G uPD78C14GF uPD78C14L uPD78C18 87AD uPD78C14 ic2813 IEU-1314 AN037
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    IRF MOSFET 100A 200v

    Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
    Text: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current


    Original     		PDF IRF5801PbF 10sec. IRF MOSFET 100A 200v IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806

    power MOSFET IRF data

    Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
    Text: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PDF IRF5850PbF IRF5850 power MOSFET IRF data IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5852 mosfet irf p-channel irf 2010

    IRF Power MOSFET code marking

    Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
    Text: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier


    Original     		PDF 5476A IRF5806PbF OT-23. IRF Power MOSFET code marking IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852

    78c10

    Abstract: PD78C10A NEC JAPAN 78c10agq 78C12A MKL series 78C11 87AD uPD78C10A uPD78C11A AN-307
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    irf MOSFET p-CH

    Abstract: IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23
    Text: PD-95341 IRF5851PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description


    Original     		PDF PD-95341 IRF5851PbF irf MOSFET p-CH IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23

    IRF5850

    Abstract: IRF5801 IRF5806 IRF5851 IRF5852 I3443DV IRF5803 MOSFET IRF 5805 IRF 2004
    Text: IRF5810PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


    Original     		PDF IRF5810PbF IRF5803 IRF5802 IRF5850 IRF5801 IRF5806 IRF5851 IRF5852 I3443DV IRF5803 MOSFET IRF 5805 IRF 2004

    IRF GATE LOGIC

    Abstract: AN-994 IRFR120 IRLR024N IRLU024N R120 U120 HEXFET POWER MOSFET IRF irf 210a
    Text: PD - 95551B IRLR014NPbF IRLU014NPbF l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A


    Original     		PDF 95551B IRLR014NPbF IRLU014NPbF IRLR024N) IRLU024N) EIA-481 EIA-541. EIA-481. IRF GATE LOGIC AN-994 IRFR120 IRLR024N IRLU024N R120 U120 HEXFET POWER MOSFET IRF irf 210a

    AN1001

    Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
    Text: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		PDF PD-95474A IRF5801PbF AN1001) 10sec. AN1001 IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001

    IRF Power MOSFET code marking

    Abstract: IRF 535 IRF5800 IRF5850 SI3443DV IRF MOSFET 10A P MOSFET IRF 94
    Text: PD - 96029 IRF5800PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PDF IRF5800PbF OT-23. IRF Power MOSFET code marking IRF 535 IRF5800 IRF5850 SI3443DV IRF MOSFET 10A P MOSFET IRF 94

    HF Reader Antenna Matching

    Abstract: TRIMMER capacitor 5-60 pF atmel rfid reader schematic GRM1885C1H330GA01 GRM1555C1H102GA01 rfid reader schematic GRM1555C1H270GZ01 AT88RF1354 GRM1885C1H5R6B TZ03Z500F169B00
    Text: High Frequency RFID Reader Antenna Matching 1. Introduction A high frequency reader system's magnetic field is used for tag power and communication. One factor determining the magnetic field's size and strength is antenna current. Increasing antenna current increases the


    Original     		PDF AT88RF1354 HF Reader Antenna Matching TRIMMER capacitor 5-60 pF atmel rfid reader schematic GRM1885C1H330GA01 GRM1555C1H102GA01 rfid reader schematic GRM1555C1H270GZ01 GRM1885C1H5R6B TZ03Z500F169B00

    Untitled

    Abstract: No abstract text available
    Text: PD - 95090B IRLR3915PbF IRLU3915PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 14mΩ


    Original     		PDF 95090B IRLR3915PbF IRLU3915PbF AN-994.

    irf 540 mosfet

    Abstract: No abstract text available
    Text: PD - 95090B IRLR3915PbF IRLU3915PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 14mΩ


    Original     		PDF 95090B IRLR3915PbF IRLU3915PbF IRLR3915S AN-994. irf 540 mosfet

    U120

    Abstract: AN-1005
    Text: PD - 95773B IRLR024ZPbF IRLU024ZPbF HEXFET Power MOSFET Features n n n n n n n Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 58mΩ


    Original     		PDF 95773B IRLR024ZPbF IRLU024ZPbF AN-994. U120 AN-1005

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643