Untitled
Abstract: No abstract text available
Text: PD- 96096 IRFZ24SPbF HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount 175°C Operating Temperature Fast Switching Lead-Free D VDSS = 60V RDS on = 0.10Ω G ID = 17A Description S Third Generation HEXFETs from International Rectifier
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IRFZ24SPbF
EIA-418.
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IRF 810
Abstract: IRF 545 ac power control applications 400v 16a IRF 640 mosfet 035H IRFP17N50L IRFPE30 PE30 t 125 16a 250v 99AF
Text: PD - 94322A IRFP17N50L SMPS MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications HEXFET Power MOSFET VDSS RDS on typ. Trr typ. ID 0.28Ω 500V Features and Benefits
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4322A
IRFP17N50L
170ns
O-247AC
O-247AC
IRF 810
IRF 545
ac power control applications 400v 16a
IRF 640 mosfet
035H
IRFP17N50L
IRFPE30
PE30
t 125 16a 250v
99AF
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irf 450a
Abstract: irf 940 pcb layout for TO 252AA
Text: PD - 95064 IRFR/U9310PbF P-Channel Surface Mount IRFR9310 l Straight Lead (IRFU9310) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D l VDSS = -400V RDS(on) = 7.0Ω G ID = -1.8A S Third Generation HEXFETs from International Rectifier
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IRFR/U9310PbF
IRFR9310)
IRFU9310)
-400V
O-252AA)
EIA-481
EIA-541.
EIA-481.
irf 450a
irf 940
pcb layout for TO 252AA
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MOSFET IRF 635
Abstract: No abstract text available
Text: PD - 95085 IRLR/U3103PbF Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3103 l Straight Lead (IRLU3103) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 30V
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IRLR/U3103PbF
IRLR3103)
IRLU3103)
O-252AA)
EIA-481
EIA-541.
EIA-481.
MOSFET IRF 635
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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IRF 640 mosfet
Abstract: SEC IRF 640
Text: PD - 94653C IRF3205Z IRF3205ZS IRF3205ZL Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 6.5mΩ G Description
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94653C
IRF3205Z
IRF3205ZS
IRF3205ZL
O-220AB
IRF3205Z
IRF3205ZS
AN-994.
IRF 640 mosfet
SEC IRF 640
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SEC IRF 640
Abstract: No abstract text available
Text: PD - 94653C IRF3205Z IRF3205ZS IRF3205ZL Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 6.5mΩ G Description
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94653C
IRF3205Z
IRF3205ZS
IRF3205ZL
AN-994.
O-220AB
SEC IRF 640
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Untitled
Abstract: No abstract text available
Text: PD - 95509A IRFP1405PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 5.3mΩ G Description
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5509A
IRFP1405PbF
O-247AC
O-247AC
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95A 640
Abstract: IRF 640 mosfet IRFP1405 SEC IRF 640
Text: PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 5.3mΩ
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IRFP1405
IRFPE30
O-247AC
95A 640
IRF 640 mosfet
IRFP1405
SEC IRF 640
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IRF 640 mosfet
Abstract: SEC IRF 640 AN-1005
Text: PD - 95509A IRFP1405PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 5.3mΩ G Description
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5509A
IRFP1405PbF
O-247AC
O-247AC
IRF 640 mosfet
SEC IRF 640
AN-1005
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SEC IRF 640
Abstract: IRFP1405 95A 640 95A Marking
Text: PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 5.3mΩ
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IRFP1405
O-247AC
SEC IRF 640
IRFP1405
95A 640
95A Marking
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Untitled
Abstract: No abstract text available
Text: PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 5.3mΩ
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IRFP1405
ap000
O-247AC
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IRF igbt gate driver
Abstract: MOSFET IRF 630 SMD-247 st smd diode marking code ET MOSFET IRF 630 Datasheet MOSFET IRF 570 MOSFET IRF 603
Text: PD - 94351 IRFP17N50LS SMPS MOSFET HEXFET Power MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS RDS(on) typ. Trr ID 500V 0.28Ω 170ns
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IRFP17N50LS
170ns
SMD-247
O-247AC.
SMD-247
P450S
IRFP450S
IRF igbt gate driver
MOSFET IRF 630
st smd diode marking code ET
MOSFET IRF 630 Datasheet
MOSFET IRF 570
MOSFET IRF 603
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Untitled
Abstract: No abstract text available
Text: PD- 94832 SMPS MOSFET IRFB11N50APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRFB11N50APbF
O-220AB
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IRL 1530
Abstract: CI 74112 LD50A D2030
Text: IRLW/IZ44A Advanced Power MOSFET FEATURES BVdss = 60 V • Avalanche Rugged Technology 0.025 £2 ■ Rugged Gate Oxide Technology ^DS on = lD = 50 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175* «Operating Temperature
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IRLW/IZ44A
0G3ti373
IRL 1530
CI 74112
LD50A
D2030
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SEC IRF 640
Abstract: No abstract text available
Text: IRF840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
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IRF840A
SEC IRF 640
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sec irf840
Abstract: IRF840 MOSFET SEC IRF 640
Text: IRF840 Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
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IRF840
sec irf840
IRF840 MOSFET
SEC IRF 640
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SEC IRF 640
Abstract: No abstract text available
Text: IRF840S A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
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IRF840S
SEC IRF 640
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SEC IRF 640
Abstract: No abstract text available
Text: IRFW/I840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
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IRFW/I840A
SEC IRF 640
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25cl640
Abstract: IRF 640 mosfet
Text: 2 H A R R IS IR F 5 2 0 /5 2 Ï/5 2 2 /5 2 3 IR F520R /521R /522R /523R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 2 0 A B TOP VIEW • 8A and 9.2A , 8 0 V - 100V • rD S on) = 0 .2 7 f l and 0.36S1 DRAIN (FLANGE)
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F520R
/521R
/522R
/523R
IRF520,
IRF521,
IRF522,
IRF523
IRF520R,
IRF521R,
25cl640
IRF 640 mosfet
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Untitled
Abstract: No abstract text available
Text: • 4302271 QDS4033 T04 ■ 2 H A R R IS HAS IR F640/641/642/643 IR F640R /641R /642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-22QAB TOP VIEW • 16A and 18A, 150V - 200V • rDS(on = 0 .1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*
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QDS4033
F640/641/642/643
F640R
/641R
/642R
/643R
T0-22QAB
IRF640,
IRF641,
IRF642,
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irf246 N
Abstract: IRF246
Text: £3 H A R R IS August IRF244, IRF245 IRF246, IRF247 N-Channel Power MOSFETs Avalanche Energy Rated 1991 Package Features T0-204A A BOTTOM VIEW • 14A and 13A, 275V - 250V • rDS on = 0 .2 8 0 and 0 .3 4 0 • Single Puls« Avalanche Energy Rated • SOA is Power-Dlssipation Limited
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IRF244,
IRF247
T0-204A
IRF245,
IRF246,
IRF247
Figure16.
irf246 N
IRF246
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mosfet yb
Abstract: SSF6N80A
Text: Advanced SSF6N80A P o w e r MOSFET FEATURES BV • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge — ^D S o n = lD = ■ E xtended S afe O pe ra ting A rea ■
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SSF6N80A
mosfet yb
SSF6N80A
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motorola irf640
Abstract: 643 lt IRF 640 mosfet IRF640 mosfet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF640 IRF641 IRF642 IRF643 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM OS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid
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IRF640
IRF641
IRF642
IRF643
IRF640,
IRF642,
motorola irf640
643 lt
IRF 640 mosfet
IRF640 mosfet
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