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    IRF510R Search Results

    IRF510R Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF510R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF510R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRF510R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRF510R Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: IRF510R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)5.6# I(DM) Max. (A) Pulsed I(D)4.0 @Temp (øC)100 IDM Max (@25øC Amb)20# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)43# Minimum Operating Temp (øC)-55õ


    Original
    PDF IRF510R

    IRF510R

    Abstract: dioda dioda rectifier l00a 250M IRF511R IRF512R IRF513R
    Text: _ Rugged Pow er M O SFETs File Num ber IRF510R, IRF511R, IRF512R, IRF513R 1995 Avalanche Energy Rated N-Channel Power MOSFETs 3.5A and 4.0A, 60V-100V ros on = 0.6 0 and 0.80 N-CHIANNEL ENHANCEMENT MODE Features: • ■ ■ ■ ■ Single pulse avalanche energy rated


    OCR Scan
    PDF IRF510R, IRF511R, IRF512R, IRF513R 0V-100V IRF512R IRF513R 92CS-42660 IRF510R dioda dioda rectifier l00a 250M IRF511R

    1rf510

    Abstract: 1RF51
    Text: • M3DE271 0DS3Tfl3 g H A R R IS ÖÖO ■ HAS IRF510/511/512/513 IRF51OR/511R/512R/513R N-Channel Power MOSFETs Avalanche Energy Rated* August 19 91 Package Features • T 0 -2 2 0 A B 4.9A and 5.6A, 80V - 100V TOP VIEW • rD S °n) = 0 -5 4 0 and 0 .7 4 ÎÏ


    OCR Scan
    PDF M3DE271 IRF510/511/512/513 IRF51OR/511R/512R/513R IRF510, IRF511, IRF512, IRF513 IRF510R, IRF511R, IRF512R 1rf510 1RF51

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


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    PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    1RF511

    Abstract: IRFS10 IRF 4020 1RF510 IRF 511 MOSfet Irf510 mosfet circuit diagram 1rf510 n-channel IRF511 LS 2512 04 IRF51
    Text: IRF510/511/512/513 IRF51 OR/511R/512R/513R S3 HARRIS N-Channei Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -22 0 A B • 4.9A and 5.6A , 8 0 V - 10 0V TOP VIEW • fD S ion = 0 .5 4 0 and 0 .7 4 fl DRAIN • S ingle Pulse Avalanche E nergy R ated*


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    PDF IRF510/511/512/513 IRF510R/511R/512R/513R IRFS10, IRF511, IRF512, IRF513 IRF510R, 1RF511R, IRF512R IRF513R 1RF511 IRFS10 IRF 4020 1RF510 IRF 511 MOSfet Irf510 mosfet circuit diagram 1rf510 n-channel IRF511 LS 2512 04 IRF51

    JRF510

    Abstract: 1RF511
    Text: IR F510/51 1 /5 1 2 /5 1 3 2 ] H A R R IS IR F51 O R /5 1 1 R /5 1 2 R /5 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 2 0 A B • 4 .9 A a n d 5 .6 A , 8 0 V - 1 0 0 V T O P V IE W • rD S ° n = 0 - 5 4 i i a n d 0 .7 4 £1


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    PDF F510/51 IRF510, IRF511, IRF512, IRF513 IRF51 IRF511R, IRF512R IRF513R FIGURE14b. JRF510 1RF511

    IRF540R

    Abstract: IRFP140R THOMSON DISTRIBUTOR IRF513R IRF633R THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF511R IRFD111R IRFD113R
    Text: THOMSON/ DI STR IBUTOR SflE D • TDabflTB DODSTCH TT1 ■ TCSK Power MOSFETs Rugged-Series Power MOSFETs — N-Channel Package a if1 Maximum Ratings b v DSS V >d s (A) rDS(ON) OHMS E AS (mi) 60 0.80 1 1.1 1.3 3 3.50 4 5 6 7 7 8 8 12 14 24 27 33 40 0.80


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    PDF to-204 t0-205 t0-220 to-247 IRFD113R IRFD111R IRFD123R IRFD121R IRFF113R IRFF111R IRF540R IRFP140R THOMSON DISTRIBUTOR IRF513R IRF633R THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF511R IRFD111R IRFD113R