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    IRF521 Price and Stock

    Infineon Technologies AG IRF5210STRLPBF

    MOSFET P-CH 100V 38A D2PAK
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    DigiKey IRF5210STRLPBF Cut Tape 3,849 1
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    IRF5210STRLPBF Reel 3,783 800
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    IRF5210STRLPBF Ammo Pack 17 Weeks, 3 Days 1
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    Mouser Electronics IRF5210STRLPBF 9,274
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    Verical IRF5210STRLPBF 54,400 800
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    IRF5210STRLPBF 3,821 27
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    IRF5210STRLPBF Cut Strips 342 8 Weeks 1
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    Newark IRF5210STRLPBF Cut Tape 23,782 1
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    RS IRF5210STRLPBF Bulk 300 3 Weeks 1
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    Bristol Electronics IRF5210STRLPBF 489 3
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    TME IRF5210STRLPBF 240 1
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    Ameya Holding Limited IRF5210STRLPBF 602
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    ComSIT USA IRF5210STRLPBF 695
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    Velocity Electronics IRF5210STRLPBF 20,000
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    Chip1Stop IRF5210STRLPBF Cut Tape 4,141
    • 1 $0.873
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    EBV Elektronik IRF5210STRLPBF 8,800 9 Weeks 800
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    Win Source Electronics IRF5210STRLPBF 58,080
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    Rochester Electronics LLC IRF521

    N-CHANNEL POWER MOSFET
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    DigiKey IRF521 Bulk 485
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    Infineon Technologies AG IRF5210L

    MOSFET P-CH 100V 40A TO262
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    DigiKey IRF5210L Tube 200
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    Infineon Technologies AG AUIRF5210S

    MOSFET P-CH 100V 38A D2PAK
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    Rochester Electronics AUIRF5210S 10 1
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    Infineon Technologies AG IRF5210LPBF

    MOSFET P-CH 100V 38A TO262
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    IRF521 Datasheets (51)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF521 Fairchild Semiconductor N-Channel Power MOSFETs, 11 A, 60-100 V Scan PDF
    IRF521 FCI POWER MOSFETs Scan PDF
    IRF521 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF521 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF521 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF521 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF521 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF521 Motorola European Master Selection Guide 1986 Scan PDF
    IRF521 Motorola Switchmode Datasheet Scan PDF
    IRF521 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF521 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF521 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF521 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF521 Unknown FET Data Book Scan PDF
    IRF521 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF521 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF521 National Semiconductor N-Channel Power MOSFETs Scan PDF
    IRF521 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    IRF521 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    IRF521 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistors Scan PDF

    IRF521 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF5210 TO-220AB l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description D VDSS = -100V The TO-220 package is universally preferred for all


    Original
    PDF IRF5210 O-220AB -100V O-220

    IRF5210

    Abstract: SHD230452
    Text: SENSITRON SEMICONDUCTOR SHD230452 TECHNICAL DATA DATA SHEET 722, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.065 Ohm, -20A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE


    Original
    PDF SHD230452 IRF5210 -250mA IRF5210 SHD230452

    IRF5210

    Abstract: No abstract text available
    Text: IRF5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL MOSFET IN A TO3 FOR HIGH RELIABILITY APPLICATIONS. 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )


    Original
    PDF IRF5210 00A/ms 300ms, IRF5210

    IRF5210

    Abstract: IRF5210S 1405B
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1405B IRF5210S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated


    Original
    PDF 1405B IRF5210S -100V IRF5210 IRF5210S 1405B

    irf5210s

    Abstract: No abstract text available
    Text: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L


    Original
    PDF 7049A IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418. irf5210s

    IRF5210

    Abstract: SHD225452
    Text: SENSITRON SEMICONDUCTOR SHD225452 TECHNICAL DATA DATA SHEET 4102, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.07 Ohm, -34A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 œ Add an “S” to the end of the part number for S-100 screening, SHD225452S


    Original
    PDF SHD225452 IRF5210 S-100 SHD225452S SHDC225452 IRF5210 SHD225452

    IRF5210

    Abstract: No abstract text available
    Text: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A


    Original
    PDF IRF5210PbF -100V O-220 O-220AB. O-220AB IRF5210

    IRF5210L

    Abstract: IRF5210S
    Text: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-148-79 IRF5210S HEXFET D2Pak PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S


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    PDF IRF5210S 91405C IRF5210S/L IRF5210S) IRF5210L) -100V IRF5210L

    Untitled

    Abstract: No abstract text available
    Text: IRF521 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)9.2# I(DM) Max. (A) Pulsed I(D)6.5 @Temp (øC)100 IDM Max (@25øC Amb)37# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60# Minimum Operating Temp (øC)-55õ


    Original
    PDF IRF521

    IRF5210L

    Abstract: IRF5210S
    Text: PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.06Ω


    Original
    PDF 91405C IRF5210S/L IRF5210S) IRF5210L) -100V IRF5210L IRF5210S

    Untitled

    Abstract: No abstract text available
    Text: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L


    Original
    PDF 7049A IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418.

    IRF5210L

    Abstract: IRF5210S
    Text: PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.06Ω


    Original
    PDF 91405C IRF5210S/L IRF5210S) IRF5210L) -100V IRF5210L IRF5210S

    IRF5210

    Abstract: shd230452
    Text: SENSITRON SEMICONDUCTOR SHD230452 TECHNICAL DATA DATA SHEET 722, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.065 Ohm, -20A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE


    Original
    PDF SHD230452 IRF5210 SHD230452 030Typ LCC-28T IRF5210

    IRF5210S

    Abstract: IRF5210L
    Text: PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.06Ω


    Original
    PDF 91405C IRF5210S/L IRF5210S) IRF5210L) -100V -100A/ IRF5210 -480A/ AN-994. IRF5210S IRF5210L

    IRF5210PBF

    Abstract: No abstract text available
    Text: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A


    Original
    PDF IRF5210PbF -100V O-220 O-220AB IRF5210PBF

    irf5210s

    Abstract: No abstract text available
    Text: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L


    Original
    PDF 97049B IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418. irf5210s

    IRF50

    Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523
    Text: ZETE X S E M I C O N D U C T O R S =ISI> D • ^70570 0 0 0 5 5 4 7 0 ■ ZETB 95D 0 5 5 4 7 N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan
    PDF IRF520 IRF521 IRF522 IRF523 IRF620 IRF523 O-220 IRF50 pin configuration IRF521

    1Actc

    Abstract: No abstract text available
    Text: PD 9.1434 International Iö R Rectifier IRF5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistancw Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channet Fully Avalanche Rated V d s s = -1 0 0 V RüS on = 0.06Q


    OCR Scan
    PDF IRF5210 O-220 1Actc

    jrf 520

    Abstract: irf 44 n schematic diagram UPS 600 Power structure IRF520 irf5205 IRF521 IRF520 application note IRF 520 TRANSISTOR n 522 IRF522
    Text: 3QE P /S T J • 7cjScjg37 QQSTTb? 3 ■ S G S -T H O M S O N ^ D œ iŒ ig T O iO ig i 6^ S-THOMSON TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V Dss ^D S on IRF520 IRF520FI IRF521 IRF521FI 100 100 80 80 0.27 Q 0.27 n Id ' 9.2 A 7 A IRF522 IRF522FI


    OCR Scan
    PDF 520/FI-521 522/FI-523/FI IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI 1RF523 IRF523FI jrf 520 irf 44 n schematic diagram UPS 600 Power structure irf5205 IRF520 application note IRF 520 TRANSISTOR n 522

    IRF7205

    Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY


    OCR Scan
    PDF BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRF7205 IRF7342 IXTH7P50 T0-220AB irfp9240

    IRF540

    Abstract: T0-220
    Text: SEMELAB pic SELECTOR GUIDE MOS PRODUCTS June 1998 T ype N o Technology Polarity Package VDSS RDSS on 10 Pd IRF452 IRF453 IRF460 IRF520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF540 IRF541 IRF542 IRF543 IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722


    OCR Scan
    PDF IRF452 IRF453 IRF460 IRF520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF540 T0-220

    mtp25n06

    Abstract: MTP12P05 MTP3055A MTP14N05A BUZ11 motorola MTP15N06 BUZ11 MTP5N05 T0-225AA MTP15N05
    Text: POWER TRANSISTORS — TMOS PLASTIC continued Plastic TMOS Power MOSFETs — T0-220AB (continued) C A S E 221A-02 VBR(DSS) (Volts) Min (Ohms) Max (Amp) 60 0.4 4 F'D @ TC = 25°C (Watts) Max IRF523 7 40 IRF521 8 Device 0.3 6 MTP12P06* 12 0.28 5 MTP10N06 10


    OCR Scan
    PDF T0-220AB 21A-02 IRF523 IRF521 MTP12P06* MTP10N06 IRF533 MTP12N06 IRF531 MTP15N06 mtp25n06 MTP12P05 MTP3055A MTP14N05A BUZ11 motorola BUZ11 MTP5N05 T0-225AA MTP15N05

    IRF521

    Abstract: IRF520 irf523 F521 irf522
    Text: HAJims S IRF520, IRF521, IRF522, IRF523 S e m ico n d ucto r y y 8A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 8A and 9.2A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan
    PDF IRF520, IRF521, IRF522, IRF523 TA09594 RF521, IRF521 IRF520 irf523 F521 irf522

    TO 521 MH

    Abstract: transistor IRF520 TT220 schematic diagram UPS 600 Power structure irf 44 n 56-A IRF520 application note IRF 520
    Text: / = T IRF 520/FI-521/FI IRF 522/FI-523/FI S G S -T H O M S O N H 0»H[L[i gï^(Q RS0 i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^ D S(on) IRF520 IRF520FI 100 V 100 V 0.27 ß 0.27 0 9.2 A 7 A IRF521 IRF521FI 80 V 80 V 0.27 0 0.27 n 9.2 A


    OCR Scan
    PDF 520/FI-521/FI 522/FI-523/FI IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI IRF523 IRF523FI TO 521 MH transistor IRF520 TT220 schematic diagram UPS 600 Power structure irf 44 n 56-A IRF520 application note IRF 520