IRF530
Abstract: IRF530FI
Text: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF530 IRF530FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 10 A TYPICAL RDS(on) = 0.095 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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IRF530
IRF530FI
100oC
175oC
O-220
ISOWATT220
IRF530
IRF530FI
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PDF
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IRF530
Abstract: tr irf530
Text: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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O-220
IRF530
O-220
IRF530
tr irf530
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PDF
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AN569
Abstract: IRF530
Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.140 W This advanced TMOS power FET is designed to withstand high
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IRF530/D
IRF530
AN569
IRF530
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PDF
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irf530
Abstract: IRF530 mosfet datasheet of irf530 IRF530 marking OF IRF530 tr irf530 irf530 circuit airbag
Text: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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Original
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IRF530
O-220
irf530
IRF530 mosfet
datasheet of irf530
IRF530 marking
OF IRF530
tr irf530
irf530 circuit
airbag
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PDF
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AN569
Abstract: IRF530
Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Advance Information IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.16 W This advanced TMOS power FET is designed to withstand high
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Original
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IRF530/D
IRF530
AN569
IRF530
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PDF
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IRF530
Abstract: tr irf530
Text: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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Original
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IRF530
O-220
IRF530
tr irf530
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PDF
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MAX1664
Abstract: irf530 IRF530 application
Text: IRF530 N-CHANNEL 100V - 0.12Ω - 16A TO-220 LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA TYPE IRF530 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 0.16 Ω 16 A TYPICAL RDS(on) = 0.12Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE
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O-220
IRF530
O-220
MAX1664
irf530
IRF530 application
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PDF
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DM 321
Abstract: IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530 IRF530
Text: 00-05-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-073-03 IRF530 MOSFET trans IRF530, RF1S530SM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate
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IRF530
IRF530,
RF1S530SM
DM 321
IRF530 mosfet
TA17411
RF1S540SM9A
IRF530 data sheet in
IRF530 datasheet
N-Channel Switch intersil
relay 6v 100 ohm
tr irf530
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PDF
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irf530
Abstract: 929E-10 IRF530 fairchild
Text: IRF530 Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET [ /Title IRF53 0 /Subject (22A, 100V, 0.064 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 22A, 100V, 0.064 Ohm, NChannel Power
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IRF530
IRF53
O220AB
O-220AB
O-220AB
IRF530
929E-10
IRF530 fairchild
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PDF
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RF1S540
Abstract: RF1S540SM9A RF1S530SM OF IRF530 530uH
Text: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530, RF1S530SM Data Sheet May 2000 14A, 100V, 0.160 Ohm, N-Channel Power
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IRF530,
RF1S530SM
IRF53
O220AB
O263AB
RF1S540
RF1S540SM9A
RF1S530SM
OF IRF530
530uH
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PDF
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IRF530 mosfet
Abstract: TA17411 IRF530 TB334 irf530g
Text: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530 Data Sheet February 2002 14A, 100V, 0.160 Ohm, N-Channel Power
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IRF53
O220AB
O263AB
IRF530
IRF530 mosfet
TA17411
IRF530
TB334
irf530g
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PDF
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IRF530
Abstract: IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application
Text: IRF530 Data Sheet January 2002 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Features Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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IRF530
O-220AB
IRF530
IRF530T
IRF530 fairchild
929e1
980E3
IRF530 mosfet
ON semiconductor N51
IRF530 application
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PDF
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cds photo diode
Abstract: IRF530 marking
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
cds photo diode
IRF530 marking
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PDF
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91019-04
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
91019-04
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PDF
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IRF530
Abstract: IRF532 L10M IRF531 IRF533 J56-1 IRF530 mosfet
Text: Standard Power MOSFETs- IRF530, IRF531, IRF532, IRF533 File Num ber 1575 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V
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OCR Scan
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IRF530,
IRF531,
IRF532,
IRF533
0V-100V
IRF532
50V0SS
IRF530
L10M
IRF531
J56-1
IRF530 mosfet
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PDF
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irf530
Abstract: IRF130 tr irf530 20n10 20N08 MTP20N10 MTP20N08 IRF131 IRF132 IRF133
Text: _ _ _ _ _ F A jR C H i^ IRF130-133/IRF530-533 T - ! ? -" M TP20N08/20N10 / 39/ N-Channel Power MOSFETs, 20 A, 60-100 V A Schlumberger Company Power And Discrete Division_ _ _ Description These devices are n-channei, enhancement mode, power
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OCR Scan
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IRF130-133/IRF530-533JjlHTÃ
MTP20N08/20N10
IRF130
IRF130-133
IRF530-533
MTP20N08/20N10
PC10021F
IRF130-133/IRF530-533
T-39-11
irf530
tr irf530
20n10
20N08
MTP20N10
MTP20N08
IRF131
IRF132
IRF133
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PDF
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transistor irf 647
Abstract: transistor IRF 531 transistor irf 064 irf 570 p570
Text: MOTOROLA IRF530 IRF531 IRF532 IRFS33 SEMICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These T M O S Power FETs are designed for low voltage, high speed power switching applications such as switching regulators,
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OCR Scan
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IRF530
IRF531
IRF532
IRFS33
IRF533
transistor irf 647
transistor IRF 531
transistor irf 064
irf 570
p570
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PDF
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IRF530 marking
Abstract: irf530
Text: 4Ô55M52 DOlMbSb DbS International Rectifier 11NR PD-9.3070 IRF530 HEXFET Power M O S F E T bSE T> INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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OCR Scan
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55M52
IRF530
OG14bbl
IRF530 marking
irf530
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PDF
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TA17411
Abstract: No abstract text available
Text: IRF530, RF1S530SM S e m iconductor Data Sheet 14A, 100 V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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IRF530,
RF1S530SM
160i2
TA17411
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PDF
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RF530
Abstract: 1RF530 irf532 IRF530 HEXFET TRANSISTORS irf531 IR IRF532 1RF531 TYN 058 IRF530 LIRF530
Text: he o | qassqss 0000450 1 | Data Sheet No. PD-9.307N T-39-11 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF530 IRF531 IRF532 IRF533Î HEXFET TRANSISTORS
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OCR Scan
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T-39-11
IRF530
IRF531
IRF532
IRF533Î
O-220AB
IRF530,
IRF531,
IRF532,
IRF533
RF530
1RF530
IRF530 HEXFET TRANSISTORS
IR IRF532
1RF531
TYN 058
LIRF530
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PDF
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IRF530
Abstract: IR IRF532 IRF531 OF IRF530 TA17411 f531 RF1S540 RF1S540SM9A irf532 rf1s530sm
Text: P *3 3 S IRF530, IRF531, IRF532, IRF533, RF1S530, RF1S530SM 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRF530,
IRF531,
IRF532,
IRF533,
RF1S530,
RF1S530SM
IRF530
IR IRF532
IRF531
OF IRF530
TA17411
f531
RF1S540
RF1S540SM9A
irf532
rf1s530sm
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PDF
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IRF530
Abstract: IRF530 marking
Text: PD-9.3070 International [I«R ]Rectifier IRF530 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS=100V R DS on = 0 - 1 6 0
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OCR Scan
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IRF530
O-220
IRF530
IRF530 marking
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PDF
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IRF530
Abstract: IR IRF532 IRF531 1RF531 IRF532 ic l00a IRF530 mosfet IRF533
Text: DE 1 3 a ? S ü f l l D01Û33T 4 01 3875081 G E SOLID STATE 01E Standard Power MOSFETs _ 18339 IRF530, IRF531, IRF532, IRF533 O T '3 7 *// File Number 1575 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors
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OCR Scan
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IRF530
1RF531,
IRF532,
IRF533
0V-100V'
IRF530,
IRF531,
IRF532
IRF533
IR IRF532
IRF531
1RF531
ic l00a
IRF530 mosfet
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PDF
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IRF530
Abstract: No abstract text available
Text: International HflSSMSE D Dl Mb Sb DbS i“r]Rectifier HEXFET Power M O S F E T INR PD-9.3070 IRF530 bSE INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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OCR Scan
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IRF530
O-220
T0-220
IRF530
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PDF
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