IRF530N
Abstract: IRF530N applications IRF1010 irf1010 applications
Text: PD - 9.1351 IRF530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 15A Description Fifth Generation HEXFETs from International Rectifier
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IRF530N
O-220
IRF1010
IRF530N
IRF530N applications
IRF1010
irf1010 applications
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IRF530N
Abstract: IRF1010
Text: Previous Datasheet Index Next Data Sheet PD - 9.1351 IRF530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 15A Description
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IRF530N
O-220
commercial-industrRF1010
IRF530N
IRF1010
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IRF530N
Abstract: MOSFET IRF530n
Text: PD - 91351A IRF530N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier
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1351A
IRF530N
O-220
IRF1010
IRF530N
MOSFET IRF530n
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IRF530N
Abstract: No abstract text available
Text: PD - 91351A IRF530N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier
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1351A
IRF530N
O-220
IRF530N
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IRF530N
Abstract: IRF530N applications
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF530N SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 17 A g RDS ON ≤ 110 mΩ
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IRF530N
O220AB)
IRF530N
IRF530N applications
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Untitled
Abstract: No abstract text available
Text: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International
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IRF530N
O-220
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IRF530N
Abstract: 4.5v to 100v input regulator
Text: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International
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IRF530N
O-220
O-220AB
IRF530N
4.5v to 100v input regulator
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IRF530N
Abstract: 4.5V TO 100V INPUT REGULATOR
Text: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International
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IRF530N
O-220
IRF530N
4.5V TO 100V INPUT REGULATOR
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R54 Transistor
Abstract: R52 transistor DPA424P J22 transistor IRF530N applications VC51 DI-70 TRANSISTOR R52 in4148 zener diode zener diode c25
Text: Design Idea DI-70 DPA-Switch Power Over Ethernet Interface Circuit and DC-DC Converter Application Device Power Output Input Voltage Output Voltage Topology PoE/VoIP DPA424P 15 W 36-75 VDC 5 V / 7.5 V / 20 V Forward Design Highlights The second “Classification” phase occurs at input voltages
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DI-70
DPA424P
R54 Transistor
R52 transistor
DPA424P
J22 transistor
IRF530N applications
VC51
DI-70
TRANSISTOR R52
in4148 zener diode
zener diode c25
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12v 200W AUDIO AMPLIFIER
Abstract: IR2011 8ohm 1W speaker 12v 100w TRANSISTOR AUDIO AMPLIFIER stereo amplifier 100W 24v C40C ir2011 application IRF530N applications 48V 100W zener diode 12v 100w amplifier
Text: LX1722HV EVALUATION BOARD USER GUIDE LXE1722HV AUDIOMAX EVALUATION KIT USER’S GUIDE TM Copyright 2000 Rev. 0.2, 2002-01-25 Microsemi Inc. Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1
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LX1722HV
LXE1722HV
LX1722,
LX1722CDB
4700pF
BSS138
12v 200W AUDIO AMPLIFIER
IR2011
8ohm 1W speaker
12v 100w TRANSISTOR AUDIO AMPLIFIER
stereo amplifier 100W 24v
C40C
ir2011 application
IRF530N applications
48V 100W zener diode
12v 100w amplifier
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DI-70
Abstract: TRANSISTOR R52 C22-C24 BAV19WS D101 DI-69 DL4002 DPA424P "Power over Ethernet" VR51
Text: Design Idea DI-70 DPA-Switch PoE Detection and Classification Class 0 Interface Circuit Application Device Power Output Input Voltage Output Voltage Topology PoE/VoIP DPA424P 12.94 W 34-57 VDC 5 V / 7.5 V / 20 V Forward Design Highlights • • •
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DI-70
DPA424P
DI-70
TRANSISTOR R52
C22-C24
BAV19WS
D101
DI-69
DL4002
DPA424P
"Power over Ethernet"
VR51
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DPA424PN
Abstract: DI-70 D108 transistor PC357 BAV19WS D101 DI-69 IN4148 VR51 tip29
Text: DI-70 Design Idea DPA-Switch PoE Detection and Classification Class 0 Interface Circuit Application Device Power Output Input Voltage Output Voltage Topology PoE/VoIP DPA424PN 12.94 W 34 – 57 VDC 5 V, 7.5 V, 20 V Forward Design Highlights • Simple, low-cost, discrete PoE interface circuit
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DI-70
DPA424PN
DI-70
DPA424PN
D108 transistor
PC357
BAV19WS
D101
DI-69
IN4148
VR51
tip29
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TPS2330
Abstract: TPS2300 TPS2331 GMK316F475Z schematic diagram 48V telecom 12061C104KAT2A
Text: TPS2330 48ĆV Telecom Hot Swap Evaluation Module and Interface Card User’s Guide April 2001 PMP PD & PS SLVU048 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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TPS2330
SLVU048
SLVP184
SLVP155)
IRF530N
TPS2330
TPS2300
TPS2331
GMK316F475Z
schematic diagram 48V telecom
12061C104KAT2A
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IRF530N
Abstract: No abstract text available
Text: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description Fifth Generation HEXFETs from International Rectifier
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IRFI530NPbF
O-220
IRF530N
I840G
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Untitled
Abstract: No abstract text available
Text: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description ID = 12A
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IRFI530NPbF
O-220
I840G
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IRF530N
Abstract: IRFI530N IRFI840G
Text: PD -9.1353 IRFI530N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 11A Description
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IRFI530N
O-220
IRF530N
IRFI530N
IRFI840G
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IRF530NS
Abstract: 7A, 100v fast recovery diode AN-994 IRF530N IRF530NL IRF530S 4.5v to 100v input regulator
Text: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description
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91352B
IRF530NS
IRF530NL
EIA-418.
IRF530NS
7A, 100v fast recovery diode
AN-994
IRF530N
IRF530NL
IRF530S
4.5v to 100v input regulator
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TPS23XX
Abstract: UC3914 UCC3913 UCC3917 UCC3921 Z9.1 zener DIODE
Text: Power Management Texas Instruments Incorporated –48-V/+48-V hot-swap applications By Heping Dai Systems Design Engineering, Power Management Products, AAP Introduction The rapid growth of telecommunications and Internet access systems that run continuously has increased the
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SLYT140
TPS23XX
UC3914
UCC3913
UCC3917
UCC3921
Z9.1 zener DIODE
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conclusion of zener diode voltage report
Abstract: 1N47 series zener diodes 1N47 Zener 1N47 series diodes DIODE 1N47 IRF530N ZENER DIODE 5.1V TPS2330 UC3914 UCC3913
Text: Application Report SLVA097 – May 2001 ±48-V Hot-Swap Applications With TPS23xx Hot-Swap Controllers Heping Dai Power Management Products, AAP ABSTRACT The rapid development of telecommunication and networked systems has accelerated the growth of products requiring the hot-plug capability demanded by systems with a
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SLVA097
TPS23xx
conclusion of zener diode voltage report
1N47 series zener diodes
1N47 Zener
1N47 series diodes
DIODE 1N47
IRF530N
ZENER DIODE 5.1V
TPS2330
UC3914
UCC3913
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Untitled
Abstract: No abstract text available
Text: IRF530NS IRF530NL l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description D2Pak IRF530NS The D2Pak is a surface mount power package capable of accommodating
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IRF530NS
IRF530NL
IRF530NL)
EIA-418.
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Untitled
Abstract: No abstract text available
Text: PD - 95419 HEXFET Power MOSFET l l l l l l IRFI530NPbF PRELIMINARY Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description
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IRFI530NPbF
O-220
I840G
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IRF530N
Abstract: 4.5V to 100V input regulator
Text: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description Fifth Generation HEXFETs from International Rectifier
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IRFI530NPbF
O-220
I840G
IRF530N
4.5V to 100V input regulator
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Untitled
Abstract: No abstract text available
Text: Internationa! P D - 9.1351 SRectifier IRF530N PRELIMINARY H EXFET Pow er M O S FE T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V o s s = 100V R DS on = 0 . 1 1 Q
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IRF530N
ca9/95
DQ23Dbl
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IRF530N
Abstract: IRFI530N IRFI840G JS t 15 IRFI530 ScansUX32
Text: PD -9.1353 IRFI530N P R E LIM IN A R Y HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5K V R M S <9 Sink to Lead Creepage Dist. = 4.8m m Fully Avalanche Rated V dss - 100V R D S o n = 0 .1 1 £2
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IRFI530N
T0-220
IRF530N
IRFI840G
JS t 15
IRFI530
ScansUX32
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