Untitled
Abstract: No abstract text available
Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)
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Original
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IRF610,
SiHF610
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRF610
Abstract: irf610 ir power MOSFET IRF610
Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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IRF610,
SiHF610
O-220
O-220
12-Mar-07
IRF610
irf610 ir
power MOSFET IRF610
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)
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Original
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IRF610,
SiHF610
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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power MOSFET IRF610
Abstract: No abstract text available
Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)
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Original
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IRF610,
SiHF610
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
power MOSFET IRF610
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PDF
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IRF610
Abstract: MOSFET dynamic irf610pbf power MOSFET IRF610
Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)
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Original
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IRF610,
SiHF610
2002/95/EC
O-220AB
O-220AB
11-Mar-11
IRF610
MOSFET dynamic
irf610pbf
power MOSFET IRF610
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)
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Original
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IRF610,
SiHF610
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRF610
Abstract: power MOSFET IRF610 IRF610PBF MOSFET irf610 mosfet
Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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IRF610,
SiHF610
O-220
O-220
18-Jul-08
IRF610
power MOSFET IRF610
IRF610PBF MOSFET
irf610 mosfet
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PDF
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power MOSFET IRF610
Abstract: No abstract text available
Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)
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Original
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IRF610,
SiHF610
2002/95/EC
O-220AB
11-Mar-11
power MOSFET IRF610
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)
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Original
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IRF610,
SiHF610
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)
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Original
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IRF610,
SiHF610
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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intersil irf610
Abstract: IRF610 TB334 power MOSFET IRF610
Text: IRF610 Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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Original
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IRF610
TA17442.
intersil irf610
IRF610
TB334
power MOSFET IRF610
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PDF
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irf610 mosfet
Abstract: IRF610 power MOSFET IRF610 4V801
Text: IRF610 Data Sheet Title F61 bt 3A, 0V, 00 m, June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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Original
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IRF610
IRF610
O-220AB
TB334
irf610 mosfet
power MOSFET IRF610
4V801
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PDF
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IRF610
Abstract: TB334 power MOSFET IRF610 IRF61
Text: IRF610 Data Sheet January 2002 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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Original
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IRF610
TA17442.
IRF610
TB334
power MOSFET IRF610
IRF61
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF610 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)3.3# I(DM) Max. (A) Pulsed I(D)2.1 @Temp (øC)100 IDM Max (@25øC Amb)8# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)43# Minimum Operating Temp (øC)-55õ
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Original
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IRF610
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PDF
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irf610
Abstract: power MOSFET IRF610 F611 irf610 mosfet IRF612 IRF-610 mosfet irf610
Text: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES • • • • • • • Lower Rds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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OCR Scan
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IRF610/611/612/613
IRF610
IRF611
IRF612
IRF613
power MOSFET IRF610
F611
irf610 mosfet
IRF-610
mosfet irf610
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PDF
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IRF610
Abstract: IRF612 IRF613 power MOSFET IRF610 IRF611 irf610 mosfet
Text: ~Öi 387 508 1 G E S O L I D S T A T E D F | 3 fl7 S G fll □D1 ÛBM4 fl 01E 18344 D l - - _— _ Standard Power M OSFETs IRF610, IRF611, IRF612, IRF613 File Number 1576 Power MOS Field-Effect Transistors
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OCR Scan
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IRF610,
IRF611,
IRF612,
IRF613
50V-200V
S2CS-33741
IRF612
IRF613
IRF610
power MOSFET IRF610
IRF611
irf610 mosfet
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PDF
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IRF610
Abstract: 250M 25CC IRF611 irf610 mosfet
Text: N-CHANNEL POWER MOSFETS IRF610/611 FEATURES • Lower R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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OCR Scan
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IRF610/611
IRF610
IRF611
os-10\
250M
25CC
irf610 mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF610 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for low voltage, high speed pow er switching applications such as switching regulators, converters, solenoid and relay drivers.
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OCR Scan
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IRF610
010272b
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PDF
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IRF610
Abstract: power MOSFET IRF610 33a marking
Text: International S Rectifier P D -9.3261 IRF610 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 1 lD = 3.3A Description DATA SH EETS
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OCR Scan
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IRF610
O-220
IRF610
power MOSFET IRF610
33a marking
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF610 Semiconductor Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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OCR Scan
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IRF610
1-500i2
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PDF
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irf610
Abstract: power MOSFET IRF610 irf610 mosfet pulse electronics era IRF61 irf610 samsung
Text: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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OCR Scan
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IRF610/611/612/613
IRF610
IRF61
IRF612
IRF613
power MOSFET IRF610
irf610 mosfet
pulse electronics era
irf610 samsung
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PDF
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IRF013
Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
Text: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES TO-220 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • • • • Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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OCR Scan
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IRF610/611/612/613
O-220
IRF610
IRF611
IRF612
IRF613
IRF013
D33A
power MOSFET IRF610
1RF610
irf610 samsung
irf610 mosfet
IRF61Q
613 33A
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PDF
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IRF610
Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
Text: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power
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OCR Scan
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IRF610-613
MTP2N18/2N20
O-22QAB
IRF610
IRF611
IRF612
IRF613
MTP2N18
NITP2N20
IRF610/612
IRF610
IRF612
irf P 611
IRF611
IRF613
MTP2N18
MTP2N20
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF610, IRF611, IRF612, IRF613 HARRIS S E M I C O N D U C T O R 2.6A and 3.3A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs November 1997 Description Features 2.6A and 3.3A, 150V and 200V High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRF610,
IRF611,
IRF612,
IRF613
RF612,
RF613
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PDF
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