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    IRF7103IPBF Price and Stock

    International Rectifier IRF7103IPBF

    HEXFET POWER MOSFET Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA IRF7103IPBF 6,175
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    IRF7103IPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF7103IPBF International Rectifier Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: PD -96085A IRF7103IPbF l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4


    Original
    PDF -96085A IRF7103IPbF EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: PD -96085A IRF7103IPbF HEXFET Power MOSFET l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4


    Original
    PDF -96085A IRF7103IPbF EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: PD -96085 IRF7103IPbF l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5


    Original
    PDF IRF7103IPbF EIA-481 EIA-541.