irf740
Abstract: power MOSFET IRF740 irf740 mosfet irf740 application IRF740 400V 10A
Text: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF740 400V <0.55Ω 10A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge ■ Very low intrinsic capacitances
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IRF740
O-220
O-220
IRF740
IRF740@
power MOSFET IRF740
irf740 mosfet
irf740 application
IRF740 400V 10A
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IRF7405
Abstract: irf740 irf740 mosfet power MOSFET IRF740 IRF740 application TO-220 DATASHEET IRF740 transistor equivalent irf740 JESD97
Text: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF740 400V <0.55Ω 10A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge ■ Very low intrinsic capacitances
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IRF740
O-220
IRF7405
irf740
irf740 mosfet
power MOSFET IRF740
IRF740 application
TO-220
DATASHEET IRF740
transistor equivalent irf740
JESD97
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irf740
Abstract: irf740 mosfet 53A2
Text: IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE IRF740 • ■ ■ ■ ■ VDSS RDS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY LOW INTRINSIC CAPACITANCES
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IRF740
O-220
irf740
irf740 mosfet
53A2
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IRF740
Abstract: No abstract text available
Text: IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE IRF740 • ■ ■ ■ ■ VDSS RDS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY LOW INTRINSIC CAPACITANCES
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O-220
IRF740
IRF740
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Untitled
Abstract: No abstract text available
Text: <^/ v i, One. . 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel MOSFET Transistor IRF740 0(2) o DESCRIPTION * -> • Drain Current-ID= 10A@ TC=25°C I • Drain Source Voltage: VDSS= 400V(Min)
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IRF740
O-220C
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power MOSFET IRF740
Abstract: No abstract text available
Text: IRF740 Data Sheet Title F74 bt A, 0V, 50 m, an- 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF740
TA17424
IRF740
power MOSFET IRF740
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irf740 mosfet
Abstract: irf740 application note irf740 MOSFET IRF740 as switch TA17424 TB334
Text: IRF740 Data Sheet January 2002 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF740
O-220AB
irf740 mosfet
irf740 application note
irf740
MOSFET IRF740 as switch
TA17424
TB334
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irf740 mosfet
Abstract: power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334
Text: IRF740 Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF740
O-220AB
irf740 mosfet
power MOSFET IRF740
transistor IRF740
TA17424
IRF740
TB334
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SEC IRF740
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRF740 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
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IRF740
O-220
SEC IRF740
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Untitled
Abstract: No abstract text available
Text: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features VDSS @Tjmax Type RDS(on) ID ) s ( t c u d o ) r s ( P t c Description e t u e d l o o r s Internal schematic diagram P b e O t e l ) o s ( s t b Applications c u O
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IRF740
O-220
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gate drive circuit for power MOSFET IRF740
Abstract: irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir
Text: IRF740, IRF741, IRF742, IRF743 h a r r is SEMIC0NDUCT0R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRF740,
IRF741,
IRF742,
IRF743
TA17424.
gate drive circuit for power MOSFET IRF740
irf740
irf741
irf740 mosfet
IRF740D
IRF743
irf740 STAND FOR
IRF740 ir
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Untitled
Abstract: No abstract text available
Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF740
O-220AB
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F741
Abstract: rf74 power MOSFET IRF740 irf740 mosfet IRF741 IRF740 ir TA17424 gate driver circuit IRF741 Transistor IRF743 IRF740
Text: IRF740, IRF741, IRF742, IRF743 HARRIS a S E M I C O N D U C T O R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRF740,
IRF741,
IRF742,
IRF743
TB334
F741
rf74
power MOSFET IRF740
irf740 mosfet
IRF741
IRF740 ir
TA17424
gate driver circuit IRF741
Transistor IRF743
IRF740
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1RF740
Abstract: mosfet 1RF740 IRF740 ir IRF740 ScansUX1020 ScansUX102 International Rectifier IRF740 irf740 mosfet
Text: PD-9.375H International lïsRi Rectifier IRF740 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^DS on = 0 - 5 5 0 lD = 10A Description Third Generation HEXFETs from international Rectifier provide the designer
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PDF
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O-220
L50KQ
1RF740
mosfet 1RF740
IRF740 ir
IRF740
ScansUX1020
ScansUX102
International Rectifier IRF740
irf740 mosfet
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Untitled
Abstract: No abstract text available
Text: IRF740 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V
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IRF740
O-220
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power MOSFET IRF740
Abstract: power MOSFET IRF740 driver circuit irf740 mosfet MOSFET IRF740 MOSFET IRF740 as switch PN channel MOSFET 10A Power MOSFET 50V 10A IRF740
Text: IRF740 A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^D S o n = 0 -5 5 ÌÌ ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V
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IRF740
power MOSFET IRF740
power MOSFET IRF740 driver circuit
irf740 mosfet
MOSFET IRF740
MOSFET IRF740 as switch
PN channel MOSFET 10A
Power MOSFET 50V 10A
IRF740
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VN64GA
Abstract: 1rf820 IRF740 VN1001A 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
VN64GA
1rf820
IRF740
VN1001A
2N6658
IRF120
IRF122
IRF130
IRF132
IRF140
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VN64GA
Abstract: 1rf820 irf150 IRF340 IRF742 diode 343 18a IRF740 IRF823 SILICONIX IRF740 IRF440
Text: Ü Ü A C D ^ U / C D M i v i a Dr/\Wi iv iv ^ i v T T k iv r i i i i i v t i v u v iw i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220 Siliconix
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O-220
O-237
O-202
IRF450
IRF840
IRF440
VN5001D/IRF830
VNP002A*
IRF820
VN5001A/IRF430
VN64GA
1rf820
irf150
IRF340
IRF742
diode 343 18a
IRF740
IRF823
SILICONIX IRF740
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irf740
Abstract: irf740 mosfet power MOSFET IRF740 IRF740 ir irf741 F7403
Text: N-CHANNEL POWER MOSFETS IRF740/741/742/743 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysllicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF740/741/742/743
IRF740
IRF741
IRF742
IRF743
irf740 mosfet
power MOSFET IRF740
IRF740 ir
F7403
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IRF420
Abstract: IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A VN5002A
Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350
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IRF450
IRF452
IRF440
IRF442
VNP002A*
VN5001A
IRF430
VN5002A
IRF432
IRF420
IRF420
IRF422
IRF430
IRF432
IRF440
IRF442
IRF450
IRF452
VN5001A
VN5002A
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IRF740
Abstract: diode lt 341 IRFP340 LT 741 S IRF740 400V 10A power MOSFET IRF740 irf741 irf742 irf740 mosfet IRFP341
Text: IRF740/741/742/743 IRFP340/341/342/343 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area
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IRF740/741/742/743
IRFP340/341/342/343
40/IRFP34Û
IRF741-IRFP341
IRF742/IRFP342
IRF743/IRFP343
IRF740
diode lt 341
IRFP340
LT 741 S
IRF740 400V 10A
power MOSFET IRF740
irf741
irf742
irf740 mosfet
IRFP341
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Untitled
Abstract: No abstract text available
Text: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance
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IRF740/741/742/743
IRFP340/341/342/343
F740/IRFP340
IRF741
/IRFP341
F742/IRFP342
F743/IRFP343
IRF740
IRFP340
IRF741
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irf740 equivalent
Abstract: irf340 "cross reference" IRF450 equivalent 2SK259 irf150 2SK134 equivalent 2sk135 equivalent IRF240 IRF351 2SK132
Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160
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PWR-6501
IRF441
HPWR-6502
IRF340
HPWR-6503
HPWR-6504
VN4001A
2SK132
IRF122
irf740 equivalent
irf340 "cross reference"
IRF450 equivalent
2SK259
irf150
2SK134 equivalent
2sk135 equivalent
IRF240
IRF351
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irf740 spice model
Abstract: IRF740
Text: HE D I 4âSS452 QÛ0ÔS44 0 | Data Sheet No. PD-9.375G INTERNATIONAL RECTIFIER T INTERNATIONAL. RECTIFIER l O R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74Ì IRF742 N-CHANNEL IRF743 Product Summary 400 Volt, 0.55 Ohm HEXFET T0-220AB Plastic Package
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SS452
IRF740
IRF74Ã
IRF742
IRF743
T0-220AB
IRF741
C-299
irf740 spice model
IRF740
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