IRF9640
Abstract: RF1S9640 TA17522 IRF9641 IRF9642 IRF9643 RF1S9640SM TB334 TO-220aB 11A
Text: IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM Semiconductor -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11A, -150V and -200V These are P-Channel enhancement mode silicon-gate
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Original
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IRF9640,
IRF9641,
IRF9642,
IRF9643,
RF1S9640,
RF1S9640SM
-150V
-200V,
-200V
IRF9640
RF1S9640
TA17522
IRF9641
IRF9642
IRF9643
RF1S9640SM
TB334
TO-220aB 11A
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PDF
|
IRF9640 equivalent
Abstract: irf9640 pdf switch IRF9640 transistor IRF9640 datasheet irf9640 mosfet RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334
Text: IRF9640, RF1S9640SM Data Sheet 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
|
Original
|
IRF9640,
RF1S9640SM
TA17522.
IRF9640 equivalent
irf9640 pdf switch
IRF9640
transistor IRF9640
datasheet irf9640 mosfet
RF1S9640
RF1S9640SM
RF1S9640SM9A
TA17522
TB334
|
PDF
|
SiHF9640
Abstract: irf9640
Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9640,
SiHF9640
O-220
O-220
12-Mar-07
irf9640
|
PDF
|
IRF9640
Abstract: RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334
Text: IRF9640, RF1S9640SM Data Sheet 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
|
Original
|
IRF9640,
RF1S9640SM
TA17522.
IRF9640
RF1S9640
RF1S9640SM
RF1S9640SM9A
TA17522
TB334
|
PDF
|
SiHF9640
Abstract: IRF9640
Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
|
Original
|
IRF9640,
SiHF9640
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF9640
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
|
Original
|
IRF9640,
SiHF9640
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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IRF9640
Abstract: SiHF9640 datasheet irf9640 mosfet IRF9640PBF SiHF9640-E3 8127 irf9640 mosfet power transformer type B
Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9640,
SiHF9640
O-220
O-220
18-Jul-08
IRF9640
datasheet irf9640 mosfet
IRF9640PBF
SiHF9640-E3
8127
irf9640 mosfet
power transformer type B
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PDF
|
irf9640
Abstract: No abstract text available
Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
IRF9640,
SiHF9640
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irf9640
|
PDF
|
IRF9640
Abstract: RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334
Text: IRF9640, RF1S9640SM Data Sheet Title F96 1S9 0SM bt A, 0V, 00 m, 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
|
Original
|
IRF9640,
RF1S9640SM
TA17522.
TB334,
IRF9640
O-220AB
IRF9640
RF1S9640
RF1S9640SM
RF1S9640SM9A
TA17522
TB334
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
|
Original
|
IRF9640,
SiHF9640
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
|
Original
|
IRF9640,
SiHF9640
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
|
Original
|
IRF9640,
SiHF9640
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
IRF9640
Abstract: IRF9642 RF1S9640SM IRF9643 IRF9641
Text: S E M I C O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11A, -150V and -200V These are P-Channel enhancement mode silicon-gate
|
Original
|
IRF9640,
IRF9641,
IRF9642,
IRF9643,
RF1S9640,
RF1S9640SM
-150V
-200V,
TA17522.
199st
IRF9640
IRF9642
RF1S9640SM
IRF9643
IRF9641
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
|
Original
|
IRF9640,
SiHF9640
2002/95/EC
O-220AB
O-220AB
11-Mar-11
|
PDF
|
|
|
IRF9640
Abstract: SiHF9640 SiHF9640-E3
Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
|
IRF9640,
SiHF9640
O-220AB
11-Mar-11
IRF9640
SiHF9640-E3
|
PDF
|
IRF9640
Abstract: irf9640 mosfet IRFP9240 9243 MOSFETs TO-220 diode J4S IRF9643 IRF9642 IRF9641 IIRF9640
Text: FEATURES TO -220 0G12EÔ3 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability IRF9640/9641/9642/9643 7^4142 •
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OCR Scan
|
IRF9640/9641
IRFP9240/9241
IRF9640/IRFP9240
-200V
IRF9641
/IRFP9241
-150V
IRF9642/IRFP9242
IRF9643/IRFP9243
IRF9640
irf9640 mosfet
IRFP9240
9243
MOSFETs TO-220
diode J4S
IRF9643
IRF9642
IIRF9640
|
PDF
|
irf9640
Abstract: IRF9641
Text: P-CHANNEL POWER MOSFETS IRF9640/9641 FEATURES • • • • • • • Lower R ds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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OCR Scan
|
IRF9640/9641
IRF9640
-200V
IRF9641
-150V
|
PDF
|
f9640
Abstract: IRF9640 9641 IRF9640.9641 IRF9643 IRF9642 IRF9641 9642
Text: P-CHANNEL POWER MOSFETS IRF9640/9641 /9642/9643 FEATURES • Low er Rds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polyslllcon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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OCR Scan
|
IRF9640/9641
F9640
IRF9641
IRF9642
F9643
--11A
IRF9640
9641
IRF9640.9641
IRF9643
9642
|
PDF
|
1RF9640
Abstract: IRF9640 9422B 422B
Text: PD-9.422B International S Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V ^DS on = 0-50É2 lD = -1 1 A Description
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OCR Scan
|
IRF9640
-200V
O-220
T0-220
1RF9640
IRF9640
9422B
422B
|
PDF
|
irf9640n
Abstract: 1RF9640 1RF9640S 422B IRF9640 D66A IRF9640S
Text: PD-9.422B International @*11Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channei Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = -200V ^DS on = 0 - 5 0 n lD = - 1 1 A
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OCR Scan
|
IRF9640
-200V
O-220
1RF9640S
irf9640n
1RF9640
422B
D66A
IRF9640S
|
PDF
|
1RF9640
Abstract: IRF9640
Text: International |g»i Rectifier HEXFET P o w e r M O S F E T • • • • • • • 4855455 0Ql4 2 t37 - 1NR PD9422B IRF9640 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements
|
OCR Scan
|
IRF9640
-200V
1RF9640
IRF9640
|
PDF
|
IRF9640
Abstract: transistor IRF9640 IRF9641 IRF9642 irf9640 mosfet IRF9643 f9640
Text: Rugged Power MOSFETs File Number IRF9640, IRF9641 IRF9642, IRF9643 2284 Avalanche-Energy-Rated P-Channel Power MOSFETs -9 A and -11 A, -150 V and -200 rosiom = 0.5 Q and 0.7 fi Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ite d
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OCR Scan
|
IRF9640,
IRF9641
IRF9642,
IRF9643
IRF9641,
IRF9642
92CS43279
97CS-43280
IRF9640
transistor IRF9640
irf9640 mosfet
IRF9643
f9640
|
PDF
|
IRF9640
Abstract: IRFP9240-3 irfp9240
Text: P-CHANNEL POWER MOSFETS IRF9640/9641 /9642/9643 IRFP9240/9241 /9242/9243 FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching times R u g ge d polysilicon gate ceil structure Lower input capacitance Extended safe operating area
|
OCR Scan
|
IRF9640/9641
IRFP9240/9241
IRF9640
IRFP9240
IRF9641
IRFP9241
IRF9640/9641Z9642/9643
IRFP9240-3
|
PDF
|
IRF9640
Abstract: IRF1S9640 IIRF9640 IRF9643 IRF9642 IRF9641
Text: HARRIS S E M IC O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11 A, -150V and -200V These are P-Channel enhancement mode silicon-gate
|
OCR Scan
|
IRF9640,
IRF9641,
IRF9642,
IRF9643,
RF1S9640,
RF1S9640SM
-150V
-200V,
TA17522.
IRF9640
IRF1S9640
IIRF9640
IRF9643
IRF9642
IRF9641
|
PDF
|
