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    IRFBC30 Search Results

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    IRFBC30 Price and Stock

    Vishay Siliconix IRFBC30PBF

    MOSFET N-CH 600V 3.6A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBC30PBF Tube 16,814 1
    • 1 $2.46
    • 10 $2.46
    • 100 $2.46
    • 1000 $0.79674
    • 10000 $0.69712
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    RS IRFBC30PBF Bulk 1,000
    • 1 -
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    • 1000 $2.32
    • 10000 $2.2
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    Bristol Electronics IRFBC30PBF 13
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    New Advantage Corporation IRFBC30PBF 650 1
    • 1 -
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    • 100 $1.79
    • 1000 $1.67
    • 10000 $1.67
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    Vishay Siliconix IRFBC30ASPBF

    MOSFET N-CH 600V 3.6A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBC30ASPBF Tube 2,169 1
    • 1 $2.93
    • 10 $2.93
    • 100 $2.93
    • 1000 $0.97851
    • 10000 $0.88788
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    ComSIT USA IRFBC30ASPBF 2,500
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    Vishay Siliconix IRFBC30APBF

    MOSFET N-CH 600V 3.6A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBC30APBF Tube 906 1
    • 1 $3.74
    • 10 $3.74
    • 100 $3.74
    • 1000 $1.30088
    • 10000 $1.2375
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    Vishay Siliconix IRFBC30

    MOSFET N-CH 600V 3.6A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBC30 Tube
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    Bristol Electronics IRFBC30 649
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    Quest Components IRFBC30 519
    • 1 $2.145
    • 10 $2.145
    • 100 $1.0725
    • 1000 $0.858
    • 10000 $0.858
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    Vishay Siliconix IRFBC30S

    MOSFET N-CH 600V 3.6A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBC30S Tube 1,000
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    • 1000 $3.2625
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    Find more IRFBC30 price and stock on Findchips.com

    IRFBC30 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFBC30 STMicroelectronics TRANS MOSFET N-CH 600V 3.6A 3TO-220 Original PDF
    IRFBC30 STMicroelectronics N-CHANNEL 600V - 1.8 ? - 3.6A - TO-220 POWERMES Original PDF
    IRFBC30 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFBC30 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A TO-220AB Original PDF
    IRFBC30 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRFBC30 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRFBC30 International Rectifier Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) Scan PDF
    IRFBC30 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFBC30 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 600V, 3.6A, Pkg Style TO-220AB Scan PDF
    IRFBC30 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFBC30 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    IRFBC30 Unknown FET Data Book Scan PDF
    IRFBC30 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFBC30 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFBC30 STMicroelectronics N - CHANNEL 600V - 1.8 Ohm - 3.6A - TO-220 PowerMESH II MOSFET Scan PDF
    IRFBC30A International Rectifier HEXFET Power Mosfet Original PDF
    IRFBC30A Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A TO-220AB Original PDF
    IRFBC30A International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFETs Scan PDF
    IRFBC30AL International Rectifier HEXFET Power Mosfet Original PDF
    IRFBC30AL Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A TO-262 Original PDF

    IRFBC30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 95700 SMPS MOSFET IRFBC30APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFBC30APbF O-220AB 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFBC30, SiHFBC30 O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    74139m

    Abstract: 4139 temperature AN609 IRFBC30A SiHFBC30A 74139
    Text: IRFBC30A_RC, SiHFBC30A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFBC30A SiHFBC30A AN609, 20-Apr-10 74139m 4139 temperature AN609 74139

    Untitled

    Abstract: No abstract text available
    Text: PD - 95544 IRFBC30S/LPbF • Lead-Free Document Number: 91111 7/21/04 www.vishay.com 1 IRFBC30S/LPbF Document Number: 91111 www.vishay.com 2 IRFBC30S/LPbF Document Number: 91111 www.vishay.com 3 IRFBC30S/LPbF Document Number: 91111 www.vishay.com 4 IRFBC30S/LPbF


    Original     		PDF IRFBC30S/LPbF 08-Mar-07

    IRFBC30

    Abstract: No abstract text available
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFBC30, SiHFBC30 O-220AB O-220AB 11-Mar-11 IRFBC30

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRFBC30A, SiHFBC30A O-220 O-220 IRFBC30APbF SiHFBC30Amerchantability 12-Mar-07

    SiHFBC30L

    Abstract: No abstract text available
    Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating


    Original     		PDF IRFBC30S, SiHFBC30S IRFBC30L, SiHFBC30L

    SiHFBC30L

    Abstract: No abstract text available
    Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S)


    Original     		PDF IRFBC30S, SiHFBC30S IRFBC30L, SiHFBC30L

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFBC30, SiHFBC30 O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: PD- 95417 IRFBC30PbF • Lead-Free 1 IRFBC30PbF 2 IRFBC30PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)


    Original     		PDF IRFBC30PbF O-220AB O-220AB.

    AN-994

    Abstract: IRFBC30A
    Text: PD- 91890B IRFBC30AS/L SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF 91890B IRFBC30AS/L AN-994 IRFBC30A

    IRFBC30PBF

    Abstract: No abstract text available
    Text: PD- 95417 IRFBC30PbF • Lead-Free www.irf.com 1 06/16/04 IRFBC30PbF 2 www.irf.com IRFBC30PbF www.irf.com 3 IRFBC30PbF 4 www.irf.com IRFBC30PbF www.irf.com 5 IRFBC30PbF 6 www.irf.com IRFBC30PbF www.irf.com 7 IRFBC30PbF TO-220AB Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRFBC30PbF O-220AB O-220AB. IRFBC30PBF

    3103L

    Abstract: CODE PAR
    Text: PD - 95544 IRFBC30S/LPbF • Lead-Free www.irf.com 1 7/21/04 IRFBC30S/LPbF 2 www.irf.com IRFBC30S/LPbF www.irf.com 3 IRFBC30S/LPbF 4 www.irf.com IRFBC30S/LPbF www.irf.com 5 IRFBC30S/LPbF 6 www.irf.com IRFBC30S/LPbF www.irf.com 7 IRFBC30S/LPbF D2Pak Package Outline


    Original     		PDF IRFBC30S/LPbF EIA-418. 3103L CODE PAR

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 11-Mar-11

    IRFBC30

    Abstract: No abstract text available
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFBC30, SiHFBC30 O-220 12-Mar-07 IRFBC30

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration


    Original     		PDF IRFBC30AS, IRFBC30AL, SiHFBC30AS SiHFBC30AL O-262) O-263) 12-Mar-07

    IRFBC30A

    Abstract: No abstract text available
    Text: PD- 91889A IRFBC30A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF 1889A IRFBC30A O-220AB 12-Mar-07 IRFBC30A

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFBC30, SiHFBC30 O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: PD- 95534 SMPS MOSFET IRFBC30AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFBC30AS/LPbF O-262 AN-994. IRFBC30A

    diode 251 36A

    Abstract: IRFBC30 IRFBC30F IOR 438 IRFBC30 150 E 482C a40v
    Text: PD-9.482C International irêRl Rectifier IRFBC30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 600V R DS on - 2 -2 ß lD = 3.6A Description T h ird G e n e ra tio n H E X F E T s fro m Inte rn a tio n a l R ectifie r p rovid e th e d e sig n e r


    OCR Scan     		PDF IRFBC30 O-220 diode 251 36A IRFBC30 IRFBC30F IOR 438 IRFBC30 150 E 482C a40v

    IRFBC30

    Abstract: IRFBC30I 442 rectifier
    Text: International HEl Rectifier I IRFBC30 I NTERNATIONAL HEXFET Power MOSFET • • • • • PD-9.482C 4Ô S 54 S 2 G 0 m T 5 b ÔDfi H I N R RECTIFIER bSE D Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		PDF IRFBC30 O-220 T0-220 IRFBC30 IRFBC30I 442 rectifier

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ;^ O T @ re s IR F B C 30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRFBC30 Voss R D S o n Id 600 V 2.2 Q 4.3 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED • REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED


    OCR Scan     		PDF IRFBC30 O-220 IRFBC30