IRFBC30
Abstract: IRFBC30 150 E 4315A
Text: IRFBC30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRFBC30 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 2.2 Ω 4.3 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED
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IRFBC30
100oC
O-220
IRFBC30
IRFBC30 150 E
4315A
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IRFBC30
Abstract: No abstract text available
Text: IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH ΙΙ MOSFET TYPE IRFBC30 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 2.2 Ω 3.6 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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IRFBC30
O-220
IRFBC30
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IRFBC30
Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET
Text: IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6 A - TO-220 PowerMESH MOSFET TYPE IRFBC30 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 2.2 Ω 3.6 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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IRFBC30
O-220
IRFBC30
SWITCHING WELDING SCHEMATIC BY MOSFET
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Untitled
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRFBC30
Abstract: irfbc30 vishay
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
O-220
O-220
18-Jul-08
IRFBC30
irfbc30 vishay
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IRFBC30
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
O-220AB
O-220AB
11-Mar-11
IRFBC30
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22AB
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
22AB
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Untitled
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IR2106 APPLICATION NOTE
Abstract: IR2106S DT97-3 IRFBC20 IR21064S CC15V ir2106s datasheet IRFBC30 IRFPE50 IR2106
Text: Data Sheet No. PD60162-U IR2106 4 (S) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Product Summary Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V (IR2106(4)
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PD60162-U
IR2106
IR2106)
5M-1994.
MS-012AA.
MS-012AA)
MS-001AC)
IR2106 APPLICATION NOTE
IR2106S
DT97-3
IRFBC20
IR21064S
CC15V
ir2106s datasheet
IRFBC30
IRFPE50
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S2186
Abstract: SCOP 200-002 IRs2186 application note
Text: IRS2186 4 (S)PBF High and Low Side Driver Features • Product Summary Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 V to 20 V
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IRS2186
S2186
SCOP 200-002
IRs2186 application note
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IR2108
Abstract: IR21084 IRFBC30 IRFPE50 IR21084S IR2108S IRFBC20 IRFBC40
Text: Data Sheet No. PD60161-Q IR2108 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Packages Fully operational to +600V 14-Lead SOIC Tolerant to negative transient voltage 8-Lead SOIC IR21084S IR2108S dV/dt immune • Gate drive supply range from 10 to 20V
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PD60161-Q
IR2108
14-Lead
IR21084S
IR2108S
IR21084
IR2108
540ns
MS-012AA.
IR21084
IRFBC30
IRFPE50
IR21084S
IR2108S
IRFBC20
IRFBC40
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IR2108
Abstract: IR21084 mosfet te 2304 IR21084S IR2108S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PD60161-R
Text: Data Sheet No. PD60161-R IR2108 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune 14-Lead SOIC 8-Lead SOIC • Gate drive supply range from 10 to 20V
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PD60161-R
IR2108
14-Lead
IR21084S
IR2108S
IR21084
IR2108
540ns
IR21084
mosfet te 2304
IR21084S
IR2108S
IRFBC20
IRFBC30
IRFBC40
IRFPE50
PD60161-R
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD60173 rev.F IR2183 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Packages Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V
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PD60173
IR2183
14-Lead
IR21834
IR2183
IR2183S
IR2183S
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IRS21814
Abstract: IRFBC30 IRFBC20 IRFBC40 IRFPE50 IRS2181 IRS2181S IRS2181STRPBF IRS21814SPBF OC140
Text: Data Sheet No. PD60262 IRS2181/IRS21814 S PbF HIGH AND LOW SIDE DRIVER Features • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20 V
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PD60262
IRS2181/IRS21814
IRS2181
14-Lead
IRS21814
IRS2181S
IRS21814S
IRS2181/IRS?
IRS2181PbF
IRS21814
IRFBC30
IRFBC20
IRFBC40
IRFPE50
IRS2181
IRS2181S
IRS2181STRPBF
IRS21814SPBF
OC140
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SiHFBC30L
Abstract: irfbc30spbf IRFBC30 IRFBC30L IRFBC30S SiHFBC30L-E3 SiHFBC30S SiHFBC30S-E3
Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating
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IRFBC30S,
SiHFBC30S
IRFBC30L,
SiHFBC30L
irfbc30spbf
IRFBC30
IRFBC30L
IRFBC30S
SiHFBC30L-E3
SiHFBC30S-E3
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irs2183s application note
Abstract: IRFBC30 IRS21834 IR21834 IRFBC20 IRS2183 IRS21834S
Text: Data Sheet No. PD60265 IRS2183/IRS21834 S PbF HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt Packages 8-Lead PDIP IRS2183 immune • Gate drive supply range from 10 V to 20 V
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PD60265
IRS2183/IRS21834
IRS2183
14-Lead
IRS21834
IRS21834S
IRS2183S
IRS2183PbF
irs2183s application note
IRFBC30
IRS21834
IR21834
IRFBC20
IRS2183
IRS21834S
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IRFBC30
Abstract: OC140 IRFBC40 IRFPE50 IRS2181 IRS21814 IRS2181S IRFBC20
Text: Data Sheet No. PD60262 IRS2181/IRS21814 S PbF HIGH AND LOW SIDE DRIVER Packages Features • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune
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PD60262
IRS2181/IRS21814
IRS2181
14-Lead
IRS21814
IRS2181S
114-Lead
IRS21814S
IRS2181PbF
IRFBC30
OC140
IRFBC40
IRFPE50
IRS2181
IRS21814
IRS2181S
IRFBC20
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IRS21064
Abstract: IRS2106 IRFBC30 IRFBC20 IRFBC40 IRFPE50
Text: PRELIMINARY Data Sheet No. PD60246 revB IRS2106/IRS21064 S PbF HIGH AND LOW SIDE DRIVER Features Packages • Floating channel designed for bootstrap operation • Fully operational to +600 V 8-Lead SOIC • Tolerant to negative transient voltage, dV/dt immune
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PD60246
IRS2106/IRS21064
IRS2106)
14-Lead
Input6/IRS21064
IRS2106PbF
IRS2106SPbF
IRS2106STRPbF
IRS21064
IRS2106
IRFBC30
IRFBC20
IRFBC40
IRFPE50
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD60271 IRS2186/IRS21864 S PbF HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt Packages immune • Gate drive supply range from 10 V to 20 V
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PD60271
IRS2186/IRS21864
14-Lead
IRS21864
IRS2186
IRS2186S
IRS21864S
IRS2186PbF
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IRFBC32
Abstract: No abstract text available
Text: HE D I 4Û5S4SE □□Oôfc.42 □ | Data Sheet No. PD-9.482B INTERNATIONAL RECTIFIER _ IN T E R N A T IO N A L R E C T IF IE R [ l O R I REPETITIVE AVALANCHE AND dv/dt RATED* IRFBC30 IRFBC32 HEXFET TRANSISTORS N -C H A N N E L 600 Volt, 2.2 Ohm HEXFET
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IRFBC30
IRFBC32
T0-220AB
C-397
IRFBC30,
IRFBC32
C-398
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IRFBC30
Abstract: IRFBC30I 442 rectifier
Text: International HEl Rectifier I IRFBC30 I NTERNATIONAL HEXFET Power MOSFET • • • • • PD-9.482C 4Ô S 54 S 2 G 0 m T 5 b ÔDfi H I N R RECTIFIER bSE D Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements
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IRFBC30
O-220
T0-220
IRFBC30
IRFBC30I
442 rectifier
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diode 251 36A
Abstract: IRFBC30 IRFBC30F IOR 438 IRFBC30 150 E 482C a40v
Text: PD-9.482C International irêRl Rectifier IRFBC30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 600V R DS on - 2 -2 ß lD = 3.6A Description T h ird G e n e ra tio n H E X F E T s fro m Inte rn a tio n a l R ectifie r p rovid e th e d e sig n e r
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IRFBC30
O-220
diode 251 36A
IRFBC30
IRFBC30F
IOR 438
IRFBC30 150 E
482C
a40v
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Untitled
Abstract: No abstract text available
Text: Dato Sheet No. PD-6.086 International I R Rectifier IR 2 1 1 0 E 4 HIGH AND LOW SIDE DRIVER Product Summary Features • Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage VOFFSET 400V max.
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IR2110E4
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