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    IRFC11N50AB Datasheets Context Search

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    IRFC11N50

    Abstract: IRFB11N50A equivalent
    Text: PD - 94737 IRFC11N50AB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.52Ω


    Original     		IRFC11N50AB 12-Mar-07 IRFC11N50 IRFB11N50A equivalent PDF

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    Abstract: No abstract text available
    Text: PD - 94737 IRFC11N50AB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.52Ω


    Original     		IRFC11N50AB PDF