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Vishay Siliconix IRFI840GPBF MOSFET N-CH 500V 4.6A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI840GPBF	Tube	469		1	1 $3.68 10 $3.68 100 $3.68 1000 $1.27547 10000 $1.2095	Buy Now
Quest Components	IRFI840GPBF		204			1 $2.88 10 $2.88 100 $1.44 1000 $1.44 10000 $1.44	Buy Now
Vishay Siliconix IRFI840GLCPBF MOSFET N-CH 500V 4.5A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI840GLCPBF	Tube	102		1	1 $3.95 10 $3.95 100 $3.95 1000 $1.38508 10000 $1.33075	Buy Now
Vishay Siliconix IRFI840G MOSFET N-CH 500V 4.6A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI840G	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix IRFI840GLC MOSFET N-CH 500V 4.5A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI840GLC	Tube			1,000	1 - 10 - 100 - 1000 $3.475 10000 $3.475	Buy Now
Vishay Intertechnologies IRFI840GPBF MOSFETs TO220 500V 4.6A N-CH MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IRFI840GPBF		3,406			1 $2.54 10 $1.75 100 $1.69 1000 $1.65 10000 $1.65	Buy Now
Verical	IRFI840GPBF		650		8	1 - 10 $1.7657 100 $1.7446 1000 $1.7446 10000 $1.7446	Buy Now
	IRFI840GPBF		13		9	1 - 10 $3.675 100 $2.7 1000 $2.7 10000 $2.7	Buy Now
Arrow Electronics	IRFI840GPBF		650	13 Weeks	1	1 $2.306 10 $1.7585 100 $1.7374 1000 $1.7374 10000 $1.7374	Buy Now
RS	IRFI840GPBF	Bulk			1,000	1 - 10 - 100 - 1000 $2.64 10000 $2.5	Get Quote
Quest Components	IRFI840GPBF		720			1 $2.4 10 $2.4 100 $2.4 1000 $0.78 10000 $0.78	Buy Now

TTI	IRFI840GPBF	Tube			50	1 - 10 - 100 $1.26 1000 $1.2 10000 $1.18	Buy Now
TME	IRFI840GPBF		966		1	1 $2.81 10 $1.88 100 $1.6 1000 $1.21 10000 $1.15	Buy Now
Chip1Stop	IRFI840GPBF	Tube	13			1 $2.94 10 $2.16 100 $2.16 1000 $2.16 10000 $2.16	Buy Now
EBV Elektronik	IRFI840GPBF		13,250	14 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IRFI840GPBF		9,400		1	1 - 10 - 100 - 1000 $1.37 10000 $1.27	Buy Now

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IRFI840G Datasheets (18)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFI840G	International Rectifier	500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package	Original	PDF
IRFI840G	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFI840G	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.6A TO220FP	Original	PDF
IRFI840G	International Rectifier	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A)	Scan	PDF
IRFI840G	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFI840G	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 500V, 4.6A, Pkg Iso TO-220 Fullpak	Scan	PDF
IRFI840G	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFI840G	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFI840GLC	International Rectifier	500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package	Original	PDF
IRFI840GLC	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFI840GLC	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.5A TO220FP	Original	PDF
IRFI840GLC	International Rectifier	HEXFET Power Mosfet	Scan	PDF
IRFI840GLC	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFI840GLC	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

IRFI840GLCPBF	International Rectifier	500V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220 FullPak package	Original	PDF
IRFI840GLCPBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.5A TO220FP	Original	PDF
IRFI840GPBF	International Rectifier	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.6A TO220FP	Original	PDF
IRFI840GPBF	International Rectifier	500V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220 FullPak package	Original	PDF

IRFI840G Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement	Original	PDF	IRFI840GLC, SiHFI840GLC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: PD - 94864 IRFI840GPbF • Lead-Free www.irf.com 1 12/03/03 IRFI840GPbF 2 www.irf.com IRFI840GPbF www.irf.com 3 IRFI840GPbF 4 www.irf.com IRFI840GPbF www.irf.com 5 IRFI840GPbF 6 www.irf.com IRFI840GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches	Original	PDF	IRFI840GPbF O-220
SiHFI840G Abstract: IRFI840G SiHFI840G-E3 Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI840G, SiHFI840G O-220 11-Mar-11 IRFI840G SiHFI840G-E3
90-370 Abstract: AN609 IRFI840GLC SiHFI840GLC Text: IRFI840GLC_RC, SiHFI840GLC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	IRFI840GLC SiHFI840GLC AN609, 11-May-10 90-370 AN609
Untitled Abstract: No abstract text available Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement	Original	PDF	IRFI840GLC, SiHFI840GLC O-220 12-Mar-07
IRFI840G Abstract: No abstract text available Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI840G, SiHFI840G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFI840G
Untitled Abstract: No abstract text available Text: IRFI840G Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)4.6 I(DM) Max. (A) Pulsed I(D)2.9 @Temp (øC)100# IDM Max (@25øC Amb)18 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)-55õ	Original	PDF	IRFI840G
E401 Abstract: IRFI840G part marking information h 9245 marking 34 marking gB diode marking code 3432 marking code gb Marking information Text: TO-220 Full-Pak Package Outline TO-220 Full-Pak Part Marking Information Notes : This part marking information applies to all devices produced before 02/26/2001 and currently for parts manufactured in GB. EXAMPLE: T HIS IS AN IRFI840G WIT H AS S EMBLY LOT CODE E401	Original	PDF	O-220 IRFI840G E401 IRFI840G part marking information h 9245 marking 34 marking gB diode marking code 3432 marking code gb Marking information
IRFI840G Abstract: SiHFI840G SiHFI840G-E3 Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI840G, SiHFI840G O-220 18-Jul-08 IRFI840G SiHFI840G-E3
Untitled Abstract: No abstract text available Text: PD - 94865 IRFI840GLCPbF • Lead-Free Document Number: 91160 12/4/03 www.vishay.com 1 IRFI840GLCPbF Document Number: 91160 www.vishay.com 2 IRFI840GLCPbF Document Number: 91160 www.vishay.com 3 IRFI840GLCPbF Document Number: 91160 www.vishay.com 4 IRFI840GLCPbF	Original	PDF	IRFI840GLCPbF O-220
IRFI840G Abstract: SiHFI840G SiHFI840G-E3 Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI840G, SiHFI840G O-220 18-Jul-08 IRFI840G SiHFI840G-E3
IRFI840GLC Abstract: SiHFI840GLC SiHFI840GLC-E3 SiHFI840G Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement	Original	PDF	IRFI840GLC, SiHFI840GLC O-220 11-Mar-11 IRFI840GLC SiHFI840GLC-E3 SiHFI840G
SiHFI840G Abstract: IRFI840G Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI840G, SiHFI840G O-220 12-Mar-07 IRFI840G
SiHFI840G Abstract: No abstract text available Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement	Original	PDF	IRFI840GLC, SiHFI840GLC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiHFI840G

Untitled Abstract: No abstract text available Text: PD - 94865 IRFI840GLCPbF • Lead-Free Document Number: 91160 12/4/03 www.vishay.com 1 IRFI840GLCPbF Document Number: 91160 www.vishay.com 2 IRFI840GLCPbF Document Number: 91160 www.vishay.com 3 IRFI840GLCPbF Document Number: 91160 www.vishay.com 4 IRFI840GLCPbF	Original	PDF	IRFI840GLCPbF O-220
Untitled Abstract: No abstract text available Text: PD - 94865 IRFI840GLCPbF • Lead-Free www.irf.com 1 12/4/03 IRFI840GLCPbF 2 www.irf.com IRFI840GLCPbF www.irf.com 3 IRFI840GLCPbF 4 www.irf.com IRFI840GLCPbF www.irf.com 5 IRFI840GLCPbF 6 www.irf.com IRFI840GLCPbF www.irf.com 7 IRFI840GLCPbF TO-220 Full-Pak Package Outline	Original	PDF	IRFI840GLCPbF O-220
IRFI840G Abstract: No abstract text available Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI840G, SiHFI840G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFI840G
SiHFI840G Abstract: No abstract text available Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement	Original	PDF	IRFI840GLC, SiHFI840GLC O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SiHFI840G
Untitled Abstract: No abstract text available Text: PD - 94864 IRFI840GPbF • Lead-Free Document Number: 91161 12/03/03 www.vishay.com 1 IRFI840GPbF Document Number: 91161 www.vishay.com 2 IRFI840GPbF Document Number: 91161 www.vishay.com 3 IRFI840GPbF Document Number: 91161 www.vishay.com 4 IRFI840GPbF Document Number: 91161	Original	PDF	IRFI840GPbF O-220 12-Mar-07
k d718 Abstract: d718* transistor D718 transistor d718 marking code SJ transistors k d718 017 Ultra High Voltage Hexfets D718 transistor IRFI840G IRFI840GLC Text: PD-9.1208 International [mîr] Rectifier IRFI840GLC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Repetitive Avalanche Rated	OCR Scan	PDF	IRFI840GLC D-6380 k d718 d718* transistor D718 transistor d718 marking code SJ transistors k d718 017 Ultra High Voltage Hexfets D718 transistor IRFI840G IRFI840GLC
IRFI840GLC Abstract: No abstract text available Text: PD-9.1208 International i » r Rectifier IRFI840GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm	OCR Scan	PDF	IRFI840GLC D-6380 0021b77 IRFI840GLC
irf1840g Abstract: irf1840 irf18 IRFI840G Text: International i“R Rectifier PD-9.642A IRFI840G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D I 500V V DSS= \ ^DS on = 0-85È2	OCR Scan	PDF	IRFI840G IRF1840G T50KC1 irf1840 irf18
RG-910 Abstract: IRFI840 aj 312 CD 1517 IRFI840G Text: International S Rectifier PD-9.642A IRFI840G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V DSS = 5 0 0 V ^DS on = 0 -8 5 Q l D = 4 .6 A	OCR Scan	PDF	IRFI840G O-220 RG-910 IRFI840 aj 312 CD 1517 IRFI840G
Untitled Abstract: No abstract text available Text: 4855452 International !“R R ectifier OCH H I N R PD-9.642A IRFI840G HEXFET Pow er M O S F E T • • • • • 00J517A INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating	OCR Scan	PDF	IRFI840G 00J517A O-220

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IRFI840G Datasheets (18)

IRFI840G Datasheets Context Search

Untitled

Untitled

SiHFI840G

90-370

Untitled

IRFI840G

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E401

IRFI840G

Untitled

IRFI840G

IRFI840GLC

SiHFI840G

SiHFI840G

Untitled

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IRFI840G

SiHFI840G

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k d718

IRFI840GLC

irf1840g

RG-910

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