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Vishay Siliconix IRFIBC40GPBF MOSFET N-CH 600V 3.5A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFIBC40GPBF	Tube	1,362		1	1 $4.84 10 $4.84 100 $4.84 1000 $1.75676 10000 $1.75676	Buy Now
ComSIT USA	IRFIBC40GPBF		750			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix IRFIBC40G MOSFET N-CH 600V 3.5A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFIBC40G	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix IRFIBC40GLC MOSFET N-CH 600V 3.5A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFIBC40GLC	Tube			1,000	1 - 10 - 100 - 1000 $4.8375 10000 $4.8375	Buy Now
Vishay Siliconix IRFIBC40GLCPBF MOSFET N-CH 600V 3.5A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFIBC40GLCPBF	Tube			1,000	1 - 10 - 100 - 1000 $2.03625 10000 $2.03625	Buy Now
Vishay Intertechnologies IRFIBC40GLCPBF MOSFET N-CHANNEL 600V - Tape and Reel (Alt: IRFIBC40GLCPBF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IRFIBC40GLCPBF	Reel		13 Weeks	1,000	1 - 10 - 100 - 1000 $2.03625 10000 $1.91647	Buy Now
Mouser Electronics	IRFIBC40GLCPBF					1 - 10 - 100 - 1000 $2.23 10000 $2.21	Get Quote
TTI	IRFIBC40GLCPBF	Tube			1,000	1 - 10 - 100 - 1000 $2.12 10000 $2.04	Buy Now
EBV Elektronik	IRFIBC40GLCPBF			14 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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IRFIBC40G Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFIBC40G	International Rectifier	600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package	Original	PDF
IRFIBC40G	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFIBC40G	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.5A TO220FP	Original	PDF
IRFIBC40G	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFIBC40G	International Rectifier	Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)	Scan	PDF
IRFIBC40G	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFIBC40G	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFIBC40G	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
IRFIBC40G	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFIBC40GLC	International Rectifier	600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package	Original	PDF
IRFIBC40GLC	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFIBC40GLC	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.5A TO220FP	Original	PDF
IRFIBC40GLC	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFIBC40GLC	International Rectifier	HEXFET Power Mosfet	Scan	PDF

IRFIBC40GLC	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFIBC40GLCPBF	International Rectifier	600V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220 FullPak package	Original	PDF
IRFIBC40GLCPBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.5A TO220FP	Original	PDF
IRFIBC40GPBF	International Rectifier	600V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220FullPAK package	Original	PDF
IRFIBC40GPBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.5A TO220FP	Original	PDF

IRFIBC40G Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFIBC40G SiHFIBC40G AN609, 31-May-10	PDF
IRFIBC40 Abstract: TO-220 FULLPAK Package SiHFIBC40G Text: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating	Original	IRFIBC40G, SiHFIBC40G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFIBC40 TO-220 FULLPAK Package	PDF
Untitled Abstract: No abstract text available Text: PD - 94860 IRFIBC40GLCPbF • Lead-Free 12/03/03 Document Number: 91181 www.vishay.com 1 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 2 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 3 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 4 IRFIBC40GLCPbF	Original	IRFIBC40GLCPbF O-220	PDF
IRFIBC40 Abstract: IRFIBC40GLC SiHFIBC40GLC SiHFIBC40GLC-E3 SiHFIBC40G Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFIBC40GLC, SiHFIBC40GLC O-220 18-Jul-08 IRFIBC40 IRFIBC40GLC SiHFIBC40GLC-E3 SiHFIBC40G	PDF
SiHFIBC40G Abstract: No abstract text available Text: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating	Original	IRFIBC40G, SiHFIBC40G O-220 12-Mar-07	PDF
Untitled Abstract: No abstract text available Text: PD - 94860 IRFIBC40GLCPbF • Lead-Free www.irf.com 1 12/03/03 IRFIBC40GLCPbF 2 www.irf.com IRFIBC40GLCPbF www.irf.com 3 IRFIBC40GLCPbF 4 www.irf.com IRFIBC40GLCPbF www.irf.com 5 IRFIBC40GLCPbF 6 www.irf.com IRFIBC40GLCPbF www.irf.com 7 IRFIBC40GLCPbF TO-220 Full-Pak Package Outline	Original	IRFIBC40GLCPbF O-220	PDF
marking vishay ir Abstract: No abstract text available Text: PD - 94857 IRFIBC40GPbF • Lead-Free Document Number: 91182 11/20/03 www.vishay.com 1 IRFIBC40GPbF Document Number: 91182 www.vishay.com 2 IRFIBC40GPbF Document Number: 91182 www.vishay.com 3 IRFIBC40GPbF Document Number: 91182 www.vishay.com 4 IRFIBC40GPbF	Original	IRFIBC40GPbF O-220 12-Mar-07 marking vishay ir	PDF
IRFIBC40G Abstract: SiHFIBC40G SiHFIBC40G-E3 Text: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating	Original	IRFIBC40G, SiHFIBC40G O-220 11-Mar-11 IRFIBC40G SiHFIBC40G-E3	PDF
IRFIBC40G Abstract: SiHFIBC40G SiHFIBC40G-E3 81273 Text: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating	Original	IRFIBC40G, SiHFIBC40G O-220 18-Jul-08 IRFIBC40G SiHFIBC40G-E3 81273	PDF
Untitled Abstract: No abstract text available Text: PD - 94857 IRFIBC40GPbF • Lead-Free Document Number: 91182 11/20/03 www.vishay.com 1 IRFIBC40GPbF Document Number: 91182 www.vishay.com 2 IRFIBC40GPbF Document Number: 91182 www.vishay.com 3 IRFIBC40GPbF Document Number: 91182 www.vishay.com 4 IRFIBC40GPbF	Original	IRFIBC40GPbF O-220 08-Mar-07	PDF
SiHFIBC40G Abstract: No abstract text available Text: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating	Original	IRFIBC40G, SiHFIBC40G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SiHFIBC40G Abstract: No abstract text available Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFIBC40GLC, SiHFIBC40GLC O-220 12-Mar-07 SiHFIBC40G	PDF
Untitled Abstract: No abstract text available Text: PD - 94860 IRFIBC40GLCPbF • Lead-Free www.irf.com 1 12/03/03 IRFIBC40GLCPbF 2 www.irf.com IRFIBC40GLCPbF www.irf.com 3 IRFIBC40GLCPbF 4 www.irf.com IRFIBC40GLCPbF www.irf.com 5 IRFIBC40GLCPbF 6 www.irf.com IRFIBC40GLCPbF www.irf.com 7 IRFIBC40GLCPbF TO-220 Full-Pak Package Outline	Original	IRFIBC40GLCPbF O-220	PDF
Untitled Abstract: No abstract text available Text: PD - 94860 IRFIBC40GLCPbF • Lead-Free 12/03/03 Document Number: 91181 www.vishay.com 1 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 2 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 3 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 4 IRFIBC40GLCPbF	Original	IRFIBC40GLCPbF O-220	PDF

SiHFIBC40G Abstract: No abstract text available Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFIBC40GLC, SiHFIBC40GLC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiHFIBC40G	PDF
SiHFIBC40G Abstract: No abstract text available Text: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating	Original	IRFIBC40G, SiHFIBC40G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: PD - 94857 IRFIBC40GPbF • Lead-Free www.irf.com 1 11/20/03 IRFIBC40GPbF 2 www.irf.com IRFIBC40GPbF www.irf.com 3 IRFIBC40GPbF 4 www.irf.com IRFIBC40GPbF www.irf.com 5 IRFIBC40GPbF 6 www.irf.com IRFIBC40GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches	Original	IRFIBC40GPbF O-220	PDF
Untitled Abstract: No abstract text available Text: PD - 94857 IRFIBC40GPbF • Lead-Free www.irf.com 1 11/20/03 IRFIBC40GPbF 2 www.irf.com IRFIBC40GPbF www.irf.com 3 IRFIBC40GPbF 4 www.irf.com IRFIBC40GPbF www.irf.com 5 IRFIBC40GPbF 6 www.irf.com IRFIBC40GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches	Original	IRFIBC40GPbF O-220	PDF
SiHFIBC40G Abstract: No abstract text available Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFIBC40GLC, SiHFIBC40GLC O-220 11-Mar-11 SiHFIBC40G	PDF
SiHFIBC40G Abstract: No abstract text available Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFIBC40GLC, SiHFIBC40GLC O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SiHFIBC40G	PDF
N 440 Abstract: AN609 IRFIBC40GLC SiHFIBC40GLC Text: IRFIBC40GLC_RC, SiHFIBC40GLC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFIBC40GLC SiHFIBC40GLC AN609, 31-May-10 N 440 AN609	PDF
IRF1Bc40g Abstract: IRF1BC40 IRF1BC40GLC SAJ 220 IRFIBC40GLC 7z mosfet ID37A Text: PD-9.1211 International S Rectifier IRFIBC40GLC HEXFET Pow er M O SFET Isolated Package High Voltage lsolatlon= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V DSS = 600V R DS on = 1 In = 3.5A D escription Third Generation HEXFETs from International Rectifier provide the designer	OCR Scan	IRFIBC40GLC T0-220 O-220 irfi840g IRF1Bc40g IRF1BC40 IRF1BC40GLC SAJ 220 IRFIBC40GLC 7z mosfet ID37A	PDF
Untitled Abstract: No abstract text available Text: PD-9.1211 International Rectifier IRFIBC40GLC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 3 0 V V g s Rating Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Repetitive Avalanche Rated	OCR Scan	IRFIBC40GLC D-6380	PDF
IRFIBC40G Abstract: RD472 IRFIBC40 600V N MOSFET T0-220 Text: International S Rectifier PD-9.852 IRFIBC40G HEXFET Power MOSFET • • • • • Isolateci Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance Vdss - 600V R DS on = 1 -2 i ^ lD = 3.5A	OCR Scan	IRFIBC40G O-220 IRFIBC40G RD472 IRFIBC40 600V N MOSFET T0-220	PDF

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IRFIBC40G Datasheets (19)

IRFIBC40G Datasheets Context Search

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IRFIBC40

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IRFIBC40

SiHFIBC40G

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marking vishay ir

IRFIBC40G

IRFIBC40G

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SiHFIBC40G

SiHFIBC40G

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SiHFIBC40G

SiHFIBC40G

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SiHFIBC40G

SiHFIBC40G

N 440

IRF1Bc40g

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IRFIBC40G