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    IRFP250 APPLICATION Search Results

    IRFP250 APPLICATION Result Highlights (5)

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    IRFP250 APPLICATION Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TA9295

    Abstract: irfp250 applications IRFP250 TB334 transistor IRFP250
    Text: IRFP250 Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP250 • 33A, 200V • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


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    IRFP250 TB334 O-247 TA9295 irfp250 applications IRFP250 TB334 transistor IRFP250 PDF

    IRFP250

    Abstract: irfp250 applications irfp250 mosfet IRFP250 m
    Text: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED • ■


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    IRFP250 O-247 IRFP250 irfp250 applications irfp250 mosfet IRFP250 m PDF

    IRFP250

    Abstract: irfp250 applications
    Text: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


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    IRFP250 O-247 IRFP250 irfp250 applications PDF

    IRFP250

    Abstract: irfp250 applications irfp250 mosfet NOR gate
    Text: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


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    IRFP250 O-247 IRFP250 irfp250 applications irfp250 mosfet NOR gate PDF

    IRFP250 application

    Abstract: irfp250 application note datasheet irfp250 mosfet IRFP250 irfp250 applications TA9295 TB334
    Text: IRFP250 Data Sheet January 2002 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features • 33A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


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    IRFP250 TA9295. IRFP250 application irfp250 application note datasheet irfp250 mosfet IRFP250 irfp250 applications TA9295 TB334 PDF

    transistor IRFP250

    Abstract: No abstract text available
    Text: IRFP250 Data Sheet Title FP2 bt A, 0V, 85 m, 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


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    IRFP250 TB334 transistor IRFP250 PDF

    irfp250 applications pulse transformer

    Abstract: irfp250 DRIVER irfp250 IRFP250 application irfp250 applications MOSFET IRFp250
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


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    IRFP250, SiHFP250 O-247 O-220 18-Jul-08 irfp250 applications pulse transformer irfp250 DRIVER irfp250 IRFP250 application irfp250 applications MOSFET IRFp250 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


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    IRFP250, SiHFP250 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFP250 application

    Abstract: No abstract text available
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the


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    IRFP250, SiHFP250 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFP250 application PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the


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    IRFP250, SiHFP250 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFP250

    Abstract: irfp250 applications IRFP250PBF
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


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    IRFP250, SiHFP250 O-247 O-220 IRFP250 irfp250 applications IRFP250PBF PDF

    irfp250 application note

    Abstract: irfp250 DRIVER
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the


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    IRFP250, SiHFP250 2002/95/EC O-220AB 11-Mar-11 irfp250 application note irfp250 DRIVER PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the


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    IRFP250, SiHFP250 O-220AB O-247AC O-218 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


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    IRFP250, SiHFP250 O-247 O-220 12-Mar-07 PDF

    IRFP250

    Abstract: irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252 IRFP253
    Text: -Standard Power MOSFETs File N um ber IRFP250, IRFP251, IRFP252, IRFP253 2330 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


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    IRFP250, IRFP251, IRFP252, IRFP253 IRFP253 75BVdss IRFP250 irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP250 Semiconductor Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 33A, 200V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


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    IRFP250 O-247 085i2 TB334 TA9295. PDF

    irfp250

    Abstract: 443D irfp250 mosfet
    Text: PD-9.443D International S Rectifier IRFP250 HEXFET Power M OSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -0 8 5 Q


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    IRFP250 O-247 T0-220 O-218 irfp250 443D irfp250 mosfet PDF

    IRFP250

    Abstract: irfp250 DRIVER irfp250 mosfet T-39-15 irfp250 applications pulse transformer IRFP253 irfp250 applications IRFP250 international rectifier IRFP251 IRFP252
    Text: HE D I 4flS5MSa 0000750 2 | Data Sheet No. PD-9.443B INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP250 IRFP251 I N-CHANNEL IRFP252 IRFP253 Product Summary 200 Volt, 0.085 Ohm HEXFET TO-247AC TO-3P Plastic Package


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    4fl554S5 O-247AC C-505 IRFP250, IRFP251, IRFP252, IRFP253 T-39-15 C-506 IRFP250 irfp250 DRIVER irfp250 mosfet T-39-15 irfp250 applications pulse transformer irfp250 applications IRFP250 international rectifier IRFP251 IRFP252 PDF

    IRFP250

    Abstract: Diode marking WW1 diode ww1 05 443D MOSFET IRFp250
    Text: PD-9.443D International K Rectifier IRFP250 HEXFET® P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^DSS ~ 2 0 0 V


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    IRFP250 O-247 T0-220 O-218 Diode marking WW1 diode ww1 05 443D MOSFET IRFp250 PDF

    irfp250m

    Abstract: IRFP250 m IRFP250 international rectifier IRFP250 MOSFET IRFp250 TYN 30A TEA+1511
    Text: ?“R Rectifier IRFP250 HEXFET Power M O S FE T • • • • • • I N T E R NA T I O NA L RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss bSE


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    IRFP250 O-247 T0-220 O-218 50Ktl irfp250m IRFP250 m IRFP250 international rectifier IRFP250 MOSFET IRFp250 TYN 30A TEA+1511 PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient


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    IRFP250 O-247 PDF

    IRFP250

    Abstract: No abstract text available
    Text: H a IRFP250, IRFP251, IRFP252, IRFP253 r r i s ” “ I CONDUCTOE 27A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150 V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    IRFP250, IRFP251, IRFP252, IRFP253 TA929252, RFP252, IRFP250 PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Standard Power MOSFET IRFP250 vD SS = 200 V = 30 A = 85 mfl cont p DS(on) N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T, = 25°C to 150°C 200 V v DQR T, = 25°C to 150-C; R GS = 1 M ii 200 V Continuous ±20 V Transient


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    IRFP250 150-C; O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: H a r r IRFP250, IRFP251, IRFP252, IRFP253 i s s e m i c o n d u c t o r 27 A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    IRFP250, IRFP251, IRFP252, IRFP253 gatFP250, RFP252, RFP253 PDF