transistor IRFP250
Abstract: No abstract text available
Text: IRFP250 Data Sheet Title FP2 bt A, 0V, 85 m, 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP250
TB334
transistor IRFP250
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IRFP250 application
Abstract: irfp250 application note datasheet irfp250 mosfet IRFP250 irfp250 applications TA9295 TB334
Text: IRFP250 Data Sheet January 2002 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features • 33A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP250
TA9295.
IRFP250 application
irfp250 application note
datasheet irfp250 mosfet
IRFP250
irfp250 applications
TA9295
TB334
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PDF
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IRFP250 application
Abstract: No abstract text available
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP250,
SiHFP250
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFP250 application
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFP250,
SiHFP250
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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irfp250 application note
Abstract: irfp250 DRIVER
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFP250,
SiHFP250
2002/95/EC
O-220AB
11-Mar-11
irfp250 application note
irfp250 DRIVER
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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IRFP250,
SiHFP250
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP250,
SiHFP250
O-220AB
O-247AC
O-218
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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irfp250 applications pulse transformer
Abstract: irfp250 DRIVER irfp250 IRFP250 application irfp250 applications MOSFET IRFp250
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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IRFP250,
SiHFP250
O-247
O-220
18-Jul-08
irfp250 applications pulse transformer
irfp250 DRIVER
irfp250
IRFP250 application
irfp250 applications
MOSFET IRFp250
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IEC571
Abstract: RIA12 EN50155 336V IRFD110 application IRFP450 dc to dc converter from 110V to 24V RAILWAY FIXED EQUIPMENT 110VN IRFP450 Power Mosfet
Text: Application Note Using Modular DC-DC Converters to Meet European Standards for Railway Applications In Europe, the performance of electrical and electronic equipment in railway applications is governed by two international standards. Electrical Requirements
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EN50155
IEC571)
IEC571,
EN50155,
RIA12,
IEC571
RIA12
EN50155
336V
IRFD110
application IRFP450
dc to dc converter from 110V to 24V
RAILWAY FIXED EQUIPMENT
110VN
IRFP450 Power Mosfet
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Untitled
Abstract: No abstract text available
Text: Bulletin I27245 09/06 HFA120FA60P HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A K2 A2 K1 A1 Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/ s Features • • • • • • Fast Recovery time characteristic
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I27245
HFA120FA60P
270nC
OT-227
OT-227
HFA120EA60)
OT-227)
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ULTRAFAST SOFT RECOVERY DUAL DIODES module
Abstract: IRFP250 UFB200FA20 fast diode SOT-227
Text: Preliminary Data Sheet PD-20491 02/01 UFB200FA20 Ultrafast Soft Recovery Diode VR = 200V Features • • • • VF typ. = 0.92V Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal Simplified Mechanical Designs, Rapid Assembly
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PD-20491
UFB200FA20
UFB200FA20)
OT-227
ULTRAFAST SOFT RECOVERY DUAL DIODES module
IRFP250
UFB200FA20
fast diode SOT-227
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ULTRAFAST SOFT RECOVERY DUAL DIODES module
Abstract: IRFP250 UFB200FA20
Text: Preliminary Data Sheet PD-20491 rev. A 04/01 UFB200FA20 Ultrafast Soft Recovery Diode Features • • • • VR = 200V Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal Simplified Mechanical Designs, Rapid Assembly
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PD-20491
UFB200FA20
UFB200FA20)
OT-227
ULTRAFAST SOFT RECOVERY DUAL DIODES module
IRFP250
UFB200FA20
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VISHAY DiodE 400
Abstract: No abstract text available
Text: VSUD400CW60 Vishay High Power Products FRED PtTM Ultrafast Soft Recovery Diode, 400 A FEATURES • Ultrafast recovery Lug terminal anode 2 Lug terminal anode 1 • Lead Pb -free RoHS • Designed for industrial level COMPLIANT BENEFITS • Reduced RFI and EMI
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VSUD400CW60
O-244
11-Mar-11
VISHAY DiodE 400
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Untitled
Abstract: No abstract text available
Text: VSUD400CW60 Vishay High Power Products FRED PtTM Ultrafast Soft Recovery Diode, 400 A FEATURES • Ultrafast recovery Lug terminal anode 2 Lug terminal anode 1 • Lead Pb -free RoHS • Designed for industrial level COMPLIANT BENEFITS • Reduced RFI and EMI
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VSUD400CW60
O-244
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: VSUD400CW60 Vishay High Power Products FRED PtTM Ultrafast Soft Recovery Diode, 400 A FEATURES • Ultrafast recovery Lug terminal anode 2 Lug terminal anode 1 • Lead Pb -free RoHS • Designed for industrial level COMPLIANT BENEFITS • Reduced RFI and EMI
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VSUD400CW60
O-244
18-Jul-08
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diode 400
Abstract: VSUD400CW60 irfp250 applications hf 600 welding wire IRFP250 VISHAY DiodE 400
Text: VSUD400CW60 Vishay High Power Products FRED PtTM Ultrafast Soft Recovery Diode, 400 A FEATURES • Ultrafast recovery Lug terminal anode 2 Lug terminal anode 1 • Lead Pb -free RoHS • Designed for industrial level COMPLIANT BENEFITS • Reduced RFI and EMI
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VSUD400CW60
O-244
18-Jul-08
diode 400
VSUD400CW60
irfp250 applications
hf 600 welding wire
IRFP250
VISHAY DiodE 400
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PDF
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irf 1740
Abstract: TAC 227 ULTRAFAST SOFT RECOVERY DUAL DIODES module welder inverter 160 dc IRFP250 UFB200FA40
Text: Preliminary Data Sheet PD-20486 02/01 UFB200FA40 Ultrafast Soft Recovery Diode VR = 400V Features • • • • VF typ. = 1.0V Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal Simplified Mechanical Designs, Rapid Assembly
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PD-20486
UFB200FA40
UFB200FA40)
OT-227
irf 1740
TAC 227
ULTRAFAST SOFT RECOVERY DUAL DIODES module
welder inverter 160 dc
IRFP250
UFB200FA40
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HFA120FA60
Abstract: IRFP250
Text: Bulletin PD -2.531 Rev.A 09/03 HFA120FA60 HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/µs K2 A2 K1 A1 HFA120FA60 Features Fast Recovery time characteristic
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HFA120FA60
270nC
OT-227
OT-227
HFA120FA60
IRFP250
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80EBU02
Abstract: IRFP250
Text: 80EBU02 Vishay High Power Products Ultrafast Soft Recovery Diode, 80 A FRED PtTM FEATURES • Ultrafast recovery • 175 °C operating junction temperature • Screw mounting only • Lead Pb -free plating Cathode • Designed and qualified for industrial level
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80EBU02
2002/95/EC
11-Mar-11
80EBU02
IRFP250
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93002
Abstract: 150EBU02 IRFP250
Text: 150EBU02 Vishay High Power Products Ultrafast Soft Recovery Diode, 150 A FRED PtTM FEATURES • Ultrafast recovery • 175 °C operating junction temperature • Screw mounting only • Lead Pb -free plating Cathode Anode • Designed and qualified for industrial level
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150EBU02
2002/95/EC
11-Mar-11
93002
150EBU02
IRFP250
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Untitled
Abstract: No abstract text available
Text: HFA120FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 120 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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HFA120FA120P
E78996
OT-227
2002/95/EC
HFA120FA120P)
OT-227
18-Jul-08
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PDF
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ULTRAFAST SOFT RECOVERY DUAL DIODES module
Abstract: HFA120FA120P IRFP250
Text: HFA120FA120P Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 120 A FEATURES 1 • Fast recovery time characteristic 4 • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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HFA120FA120P
OT-227
2002/95/EC
HFA120FA120P)
OT-227
18-Jul-08
ULTRAFAST SOFT RECOVERY DUAL DIODES module
HFA120FA120P
IRFP250
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ULTRAFAST SOFT RECOVERY DUAL DIODES module
Abstract: HFA120FA120P IRFP250
Text: HFA120FA120P Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 120 A FEATURES 1 • Fast recovery time characteristic 4 • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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HFA120FA120P
OT-227
HFA120FA120P)
OT-227
18-Jul-08
ULTRAFAST SOFT RECOVERY DUAL DIODES module
HFA120FA120P
IRFP250
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PDF
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VISHAY DiodE 400
Abstract: No abstract text available
Text: VSUD400CW60 Vishay High Power Products FRED PtTM Ultrafast Soft Recovery Diode, 400 A FEATURES • Ultrafast recovery Lug terminal anode 2 Lug terminal anode 1 • Lead Pb -free RoHS • Designed for industrial level COMPLIANT BENEFITS • Reduced RFI and EMI
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VSUD400CW60
O-244
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VISHAY DiodE 400
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PDF
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