IRFP250
Abstract: No abstract text available
Text: PD-20380B HFA45HI60C Ultrafast, Soft Recovery Diode FRED Features • • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VR = 600V VF = 1.7V Qrr = 375nC
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PD-20380B
HFA45HI60C
375nC
O-259AA
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD-20370A HFA35HB120 Ultrafast, Soft Recovery Diode FRED VR = 1200V Features • • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets vF = 3.1V Qrr = 510nC
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PD-20370A
HFA35HB120
510nC
5M-1994.
O-254AA.
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IRFP250 pin out
Abstract: HFA35HB120 IRFP250 PD-20370A
Text: PD-20370A HFA35HB120 Ultrafast, Soft Recovery Diode FRED Features • • • • • • VR = 1200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets vF = 3.1V Qrr = 510nC
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PD-20370A
HFA35HB120
510nC
5M-1994.
O-254AA.
IRFP250 pin out
HFA35HB120
IRFP250
PD-20370A
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Untitled
Abstract: No abstract text available
Text: PD-20368A HFA45HC60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic VF = 1.71V Qrr = 270nC di rec M/dt = 400A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An
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PD-20368A
HFA45HC60C
270nC
5M-1994.
O-258AA.
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HFA35HB60
Abstract: No abstract text available
Text: PD-20379A HFA35HB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VF = 1.75V Qrr = 290nC
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PD-20379A
HFA35HB60
290nC
O-254AA.
MIL-PRF-19500
HFA35HB60
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Untitled
Abstract: No abstract text available
Text: PD - 20378B HFA35HB60C Ultrafast, Soft Recovery Diode FRED Features • • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VF = 1.9V Qrr = 270nC
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20378B
HFA35HB60C
270nC
5M-1994.
O-254AA.
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Untitled
Abstract: No abstract text available
Text: PD-20379A HFA35HB60 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VF = 1.75V Qrr = 290nC
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PD-20379A
HFA35HB60
290nC
MIL-PRF-19500
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HFB16HY20CC
Abstract: IRFP250
Text: PD - 94223B HFB16HY20CC Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets IF AV = 16A trr = 30ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power
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94223B
HFB16HY20CC
HFB16HY20CC
IRFP250
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HFA35HB60C
Abstract: IRFP250 pin out IRFP250
Text: PD - 20378B HFA35HB60C Ultrafast, Soft Recovery Diode FRED Features • • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VF = 1.9V Qrr = 270nC
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Original
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PDF
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20378B
HFA35HB60C
270nC
5M-1994.
O-254AA.
HFA35HB60C
IRFP250 pin out
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD - 94223B HFB16HY20CC Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets IF AV = 16A trr = 30ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power
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94223B
HFB16HY20CC
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Untitled
Abstract: No abstract text available
Text: PD-94100A HFB35HB20 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic IF AV = 35A trr = 35ns Description TM HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An
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PD-94100A
HFB35HB20
5M-1994.
O-254AA.
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Untitled
Abstract: No abstract text available
Text: PD-20379A HFA35HB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VF = 1.75V Qrr = 290nC
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Original
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PD-20379A
HFA35HB60
290nC
O-254AA.
MIL-PRF-19500
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IRFP250 pin out
Abstract: HFB35HB20 IRFP250 PD-94100A
Text: PD-94100A HFB35HB20 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic IF AV = 35A trr = 35ns Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An
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PD-94100A
HFB35HB20
5M-1994.
O-254AA.
IRFP250 pin out
HFB35HB20
IRFP250
PD-94100A
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Untitled
Abstract: No abstract text available
Text: PD-20378C HFA35HB60C Ultrafast, Soft Recovery Diode FRED Features • • • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets ESD Rating: Class 3B per MIL-STD-750, Method 1020
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PD-20378C
HFA35HB60C
MIL-STD-750,
270nC
5M-1994.
O-254AA.
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VS-8E2TH06
Abstract: IRFP250 VS-8E2TH06-E VS-8E2TH06FP-E VS-8E2TH06-M
Text: VS-8E2TH06-x, VS-8E2TH06FP-x Vishay High Power Products Hyperfast Rectifier, 8 A FRED Pt VS-8E2TH06 FEATURES VS-8E2TH06FP • True 2 pin package • Hyperfast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature
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VS-8E2TH06-x,
VS-8E2TH06FP-x
VS-8E2TH06
VS-8E2TH06FP
2002/95/EC
O-220AC
18-Jul-08
VS-8E2TH06
IRFP250
VS-8E2TH06-E
VS-8E2TH06FP-E
VS-8E2TH06-M
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8E2TL06
Abstract: IRFP250 VS-8E2TL06-E VS-8E2TL06FP-E VS-8E2TL06-M IRFP250 pin out
Text: VS-8E2TL06-x, VS-8E2TL06FP-x Vishay High Power Products Ultralow VF Hyperfast Rectifier, 8 A FRED Pt 8E2TL06 FEATURES 8E2TL06FP • • • • • • • True 2 pin package Benchmark ultralow forward voltage drop Fast recovery time Low leakage current
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VS-8E2TL06-x,
VS-8E2TL06FP-x
8E2TL06
8E2TL06FP
2002/95/EC
O-220AC
18-Jul-08
8E2TL06
IRFP250
VS-8E2TL06-E
VS-8E2TL06FP-E
VS-8E2TL06-M
IRFP250 pin out
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VS-8E2TX06-x
Abstract: 8E2TX06-E 8E2TX06 IRFP250 VS-8E2TX06-E VS-8E2TX06FP-E VS-8E2TX06-M IRFP250 pin out v1062
Text: VS-8E2TX06-x, VS-8E2TX06FP-x Vishay High Power Products Hyperfast Rectifier, 8 A FRED Pt 8E2TX06 FEATURES 8E2TX06FP • True 2 pin package • Hyperfast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature
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VS-8E2TX06-x,
VS-8E2TX06FP-x
8E2TX06
8E2TX06FP
2002/95/EC
O-220AC
18-Jul-08
VS-8E2TX06-x
8E2TX06-E
8E2TX06
IRFP250
VS-8E2TX06-E
VS-8E2TX06FP-E
VS-8E2TX06-M
IRFP250 pin out
v1062
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Untitled
Abstract: No abstract text available
Text: VSUD360CW40 Vishay Semiconductors FRED Pt Ultrafast Soft Recovery Diode Module, 360 A FEATURES • Very low Qrr and trr • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level BENEFITS • Reduced RFI and EMI • Higher frequency operation
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VSUD360CW40
2002/95/EC
O-244
11-Mar-11
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8E2TX06
Abstract: No abstract text available
Text: VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • True 2 pin package • Hyperfast recovery time • Low forward voltage drop • Low leakage current 2L TO-220AC • 175 °C operating junction temperature
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VS-8E2TX06-E,
VS-8E2TX06-M,
VS-8E2TX06FP-E
O-220AC
O-220
2002/95/EC
18-Jul-08
8E2TX06
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Untitled
Abstract: No abstract text available
Text: VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • True 2 pin package • Hyperfast recovery time • Low forward voltage drop • Low leakage current 2L TO-220AC • 175 °C operating junction temperature
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VS-8E2TH06-E,
VS-8E2TH06-M,
VS-8E2TH06FP-E
O-220AC
O-220
2002/95/EC
18-Jul-08
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8E2TL06
Abstract: IRFP250 VS-8E2TL06-E VS-8E2TL06FP-E VS-8E2TL06-M
Text: VS-8E2TL06-E, VS-8E2TL06-M, VS-8E2TL06FP-E Vishay Semiconductors Ultralow VF Ultrafast Rectifier, 8 A FRED Pt FEATURES 2L TO-220AC • Ultrafast recovery time, extremely low VF and soft recovery • 175 °C maximum operating junction temperature • For PFC DCM operation
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VS-8E2TL06-E,
VS-8E2TL06-M,
VS-8E2TL06FP-E
O-220AC
2002/95/EC
O-220
VS-8E2TL06
18-Jul-08
8E2TL06
IRFP250
VS-8E2TL06-E
VS-8E2TL06FP-E
VS-8E2TL06-M
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8E2TX06
Abstract: VS-8E2TX06-M VS-8E2TX06-E 8E2TX06-E IRFP250 VS-8E2TX06 VS-8E2TX06FP-E
Text: VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES 2L TO-220AC • • • • • • • • • • 2L TO-220 FULL-PAK Base cathode 2 1 Cathode 3 Anode 2 Anode 1 Cathode VS-8E2TX06 DESCRIPTION/APPLICATIONS
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VS-8E2TX06-E,
VS-8E2TX06-M,
VS-8E2TX06FP-E
O-220AC
O-220
VS-8E2TX06
18-Jul-08
8E2TX06
VS-8E2TX06-M
VS-8E2TX06-E
8E2TX06-E
IRFP250
VS-8E2TX06
VS-8E2TX06FP-E
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Untitled
Abstract: No abstract text available
Text: VS-8E2TL06-E, VS-8E2TL06-M, VS-8E2TL06FP-E Vishay Semiconductors Ultralow VF Hyperfast Rectifier, 8 A FRED Pt FEATURES 2L TO-220AC • • • • • • • • True 2 pin package Benchmark ultralow forward voltage drop Fast recovery time Low leakage current
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VS-8E2TL06-E,
VS-8E2TL06-M,
VS-8E2TL06FP-E
2002/95/EC
O-220AC
O-220
18-Jul-08
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IRFP250
Abstract: irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252 IRFP253
Text: -Standard Power MOSFETs File N um ber IRFP250, IRFP251, IRFP252, IRFP253 2330 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors
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OCR Scan
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PDF
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IRFP250,
IRFP251,
IRFP252,
IRFP253
IRFP253
75BVdss
IRFP250
irfp250 mosfet
mosfet irfp 250 pin out
MOSFET IRFp250
irfp250 applications
IRFP251
IRFP252
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