IRFWZ30 Search Results

IRFWZ30 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFWZ30		Samsung Electronics	N-Channel Power MOSFETs		Scan	PDF

IRFWZ30 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFIZ34 Abstract: IRFIZ30 diode ja8 IRFWZ30 IRFWZ34 JE-8 iz34 Text: N-CHANNEL POWER MOSFETS IRFWZ34/30 IRFIZ34/30 FEATURES D’-PAK • L o w e r R ds <on • • • • • • Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area	OCR Scan	PDF	IRFWZ34/30 IRFIZ34/30 IRFWZ34/IZ34 IRWZ30/IZ30 IRFWZ34 IRFIZ34 IRFWZ30 IRFIZ30 diode ja8 JE-8 iz34
irfm014 Abstract: 100-4 k d 998 SSI50N06 IRFM014 sot223 IRFIZ30 g 995 Text: FUNCTION GUIDE MOSFETs SOT-223 N-CHANNEL BVdss V lo\|on)(A) Ros(on)( g ) W!¡a(K/W) PD(Watt) Page IRFM014 60 2.70 0.200 40.000 3.1 986 NEW IRFM110 100 1.50 0.540 40.000 3.1 989 NEW B V d s s (V) lD(on)(A) Ros(on)(Q) R0jc(K/W) PD(Watt) Page IRFWZ10 IRFWZ20	OCR Scan	PDF	OT-223 IRFM014 IRFM110 IRFWZ10 IRFWZ20 IRFWZ30 IRFWZ40 SSW50N05 SSW60N05 IRFWZ14 100-4 k d 998 SSI50N06 IRFM014 sot223 IRFIZ30 g 995

Catalog Datasheet

MFG & Type

PDF

Document Tags

IRFIZ34

Abstract: IRFIZ30 diode ja8 IRFWZ30 IRFWZ34 JE-8 iz34
Text: N-CHANNEL POWER MOSFETS IRFWZ34/30 IRFIZ34/30 FEATURES D’-PAK • L o w e r R ds <on • • • • • • Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

OCR Scan

PDF

IRFWZ34/30 IRFIZ34/30 IRFWZ34/IZ34 IRWZ30/IZ30 IRFWZ34 IRFIZ34 IRFWZ30 IRFIZ30 diode ja8 JE-8 iz34

irfm014

Abstract: 100-4 k d 998 SSI50N06 IRFM014 sot223 IRFIZ30 g 995
Text: FUNCTION GUIDE MOSFETs SOT-223 N-CHANNEL BVdss V lo|on)(A) Ros(on)( g ) W!¡a(K/W) PD(Watt) Page IRFM014 60 2.70 0.200 40.000 3.1 986 NEW IRFM110 100 1.50 0.540 40.000 3.1 989 NEW B V d s s (V) lD(on)(A) Ros(on)(Q) R0jc(K/W) PD(Watt) Page IRFWZ10 IRFWZ20