IRFZ34N
Abstract: for irfz34n IRF1010
Text: Previous Datasheet Index Next Data Sheet PD - _ IRFZ34N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.040 Ω ID = 26A Description
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IRFZ34N
O-220
O-220AB.
O-220AB
IRF1010
IRFZ34N
for irfz34n
IRF1010
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mosfet IRFZ34N
Abstract: IRFZ34N IRFZ34N MOSFET irfz34n equivalent for irfz34n lt 200 diode driver IRF1010 INTERNATIONAL RECTIFIER B469 irfz34n mosfets
Text: PD - _ IRFZ34N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.040 Ω ID = 26A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing
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IRFZ34N
O-220
O-220AB.
O-220AB
IRF1010
mosfet IRFZ34N
IRFZ34N
IRFZ34N MOSFET
irfz34n equivalent
for irfz34n
lt 200 diode driver
IRF1010
INTERNATIONAL RECTIFIER
B469
irfz34n mosfets
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IRFZ34N
Abstract: IRF 250
Text: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier
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1276C
IRFZ34N
O-220
IRF1010
IRFZ34N
IRF 250
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Untitled
Abstract: No abstract text available
Text: IRFZ34N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)55 V(BR)GSS (V)20 I(D) Max. (A)26# I(DM) Max. (A) Pulsed I(D)18 @Temp (øC)100# IDM Max (@25øC Amb)100# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)56# Minimum Operating Temp (øC)-55õ
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IRFZ34N
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irfz34n equivalent
Abstract: IRFZ34N IRFZ34N MOSFET *rfz34n
Text: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier
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1276C
IRFZ34N
O-220
irfz34n equivalent
IRFZ34N
IRFZ34N MOSFET
*rfz34n
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irfz34n
Abstract: No abstract text available
Text: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier
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1276C
IRFZ34N
O-220
irfz34n
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IRFZ34N
Abstract: irfz34n equivalent irf 405
Text: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier
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1276C
IRFZ34N
O-220
IRFZ34N
irfz34n equivalent
irf 405
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IRFZ44N complementary
Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55
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BUK7508-55
BUK7514-55A
BUK7524-55A
BUK7530-55A
BUK7570-55A
BUZ100S
BUZ102S
BUZ110S
BUZ111S
IRF1010N
IRFZ44N complementary
IRF3205 COMPLEMENTARY
IRF3205 application
a/surface mount IRFZ44N
NBP6060
IRF3205 TO-220
philips 435-2
HRF3205
harris 4365
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irfz34n equivalent
Abstract: IRFZ34N IRFZ34N MOSFET
Text: PD - 94839 IRFIZ34EPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 0.042Ω G ID = 21A S Description
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IRFIZ34EPbF
O-220
IRFZ34N
irfz34n equivalent
IRFZ34N MOSFET
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to262 pcb footprint
Abstract: AN-994 IRFZ34N IRFZ34NL IRFZ34NS IRL3103L
Text: PD - 95571 l l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free IRFZ34NSPbF IRFZ34NLPbF HEXFET Power MOSFET D RDS(on) = 0.040Ω
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IRFZ34NS)
IRFZ34NL)
IRFZ34NSPbF
IRFZ34NLPbF
IRFZ34NS/LPbF
O-262
IRL3103L
to262 pcb footprint
AN-994
IRFZ34N
IRFZ34NL
IRFZ34NS
IRL3103L
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AN-994
Abstract: IRFR4105 IRFU120 IRFU4105 IRFZ34N R120
Text: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier
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5550A
IRFR4105PbF
IRFU4105PbF
IRFR4105)
IRFU4105)
IRFU120
IRFR/U4105PbF
O-252AA)
EIA-481
EIA-541.
AN-994
IRFR4105
IRFU120
IRFU4105
IRFZ34N
R120
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AN-994
Abstract: IRFR4105 IRFU120 IRFU4105 IRFZ34N U120 10mhz mosfet IRF Power MOSFET code marking
Text: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier
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5550A
IRFR4105PbF
IRFU4105PbF
IRFR4105)
IRFU4105)
AN-994
IRFR/U4105PbF
O-251AA)
IRFU120
AN-994
IRFR4105
IRFU120
IRFU4105
IRFZ34N
U120
10mhz mosfet
IRF Power MOSFET code marking
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HRF3205 equivalent
Abstract: IRFP064N equivalent IRF3205 equivalent IRFz44n equivalent irf3205 ups irf3710 equivalent HUF75337P3 equivalent IRFZ48N equivalent irfp064n HUF75343P3 equivalent
Text: 458 LC00004.1 UFET Linecard 9/28/99 11:49 AM Page 1 HOLE PUNCH THIS EDGE UltraFET MOSFET Update Fall 1999 NEW RELEASES NEW PRODUCTS “ON DECK” Polarity N/P BVDSS Volts Id Amps rDS ON @ 4.5V/5V Ohms rDS(ON) @ 10V Ohms Package X-REF D/E ? Comments HUF75545P3
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LC00004
HUF75545P3
O-220AB
SUP75N08-10
HUF75545S3S
O-263AB
HUF75645P3
HUF75645S3S
HRF3205 equivalent
IRFP064N equivalent
IRF3205 equivalent
IRFz44n equivalent
irf3205 ups
irf3710 equivalent
HUF75337P3 equivalent
IRFZ48N equivalent
irfp064n
HUF75343P3 equivalent
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AN-994
Abstract: IRF530S IRFZ34N IRFZ34NL IRFZ34NS irfz34n 2430
Text: PD - 95571 l l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free IRFZ34NSPbF IRFZ34NLPbF HEXFET Power MOSFET D RDS(on) = 0.040Ω
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IRFZ34NS)
IRFZ34NL)
IRFZ34NSPbF
IRFZ34NLPbF
EIA-418.
AN-994
IRF530S
IRFZ34N
IRFZ34NL
IRFZ34NS
irfz34n 2430
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Untitled
Abstract: No abstract text available
Text: PD - 94840 IRFIZ34NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description
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IRFIZ34NPbF
O-220
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IRFZ34N
Abstract: irfz34n equivalent 840g
Text: PD - 94839 IRFIZ34EPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 0.042Ω G ID = 21A S Description
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IRFIZ34EPbF
O-220
IRFZ34N
irfz34n equivalent
840g
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Untitled
Abstract: No abstract text available
Text: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling V dss = 55V RDS on = 0.040Q
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1276B
IRFZ34N
O-220
002473b
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f1010
Abstract: D0247 IRFZ34N 2D 1002 diode for irfz34n f1010 IR T6A marking M6SS IRFZ34N MOSFET
Text: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY H EXFET Power M O S F E T • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Vdss = 55V
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O-220
00E473b
f1010
D0247
IRFZ34N
2D 1002 diode
for irfz34n
f1010 IR
T6A marking
M6SS
IRFZ34N MOSFET
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IRFZ34N MOSFET
Abstract: IOR 438 irfz34n mosfets for irfz34n mosfet LT 438
Text: PD -9.1276C International I G R Rectifier IRFZ34N HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Voss = 55 V R üS o n =
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1276C
IRFZ34N
O-220
IRFZ34N MOSFET
IOR 438
irfz34n mosfets
for irfz34n
mosfet LT 438
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IRF34N
Abstract: 1RFZ34N 1RFZ34 dioda rectifier IRFZ34N V145M 100MS IRF1010 VIQR9246 dioda 12B
Text: PD-9.1278A • I If c W I 1 1 U V I V 1 i d l llORlRectifier PRELIMINARY _ IRFZ34 N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling V dss
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IRFZ34N
O-220
a9246
IRF34N
1RFZ34N
1RFZ34
dioda rectifier
V145M
100MS
IRF1010
VIQR9246
dioda 12B
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irf1010 applications
Abstract: IRF1010 IRFZ34N for irfz34n IRF1010N IRFZ34 replacement guide irfz34 mosfets *rfz34n
Text: International T \ ¥7 T t t ic 1 H R e d i f i e r U E M l j l l 1 1 F !^ OT« INTERNA TIO NAL R E C T IF IE R C O R P. A PPLIC A TIO N S ENG. 233 KANSAS ST., EL SEGUNDO, CA 90245 TEL 310 322-3331 FAX (310)322-3332 IR ’S NEW FIFTH GENERATION PO W ER MOSFETS:
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IRFZ34N
IRF1010N
390nC
540nC
IRF1010
IRF1010N
irf1010 applications
for irfz34n
IRFZ34
replacement guide
irfz34 mosfets
*rfz34n
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1RFPC50
Abstract: 1RFPC50LC IRF840LC IRlz24n IRFz44n IRF540n 1RFPc
Text: _ I n t e r n a t i o n a l R e c t if ie r HEXFET Power MOSFETS VIWQOSS Drakvto-Sourc* BreakdownVokaga Vota Pot Numbar *0 S M OnSM» Rotatami (Oh"») loConlinuoui * mc DnfciCunwK Qg Total MuThaimal GataCharga AvAtanct
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T0-220AB
IRF740LC
IRF840LC
IRFBC40LC
IRL3803
IRL3705N
IRLZ14
IRLZ24N
IRLZ34N
IRLZ44N
1RFPC50
1RFPC50LC
IRFz44n IRF540n
1RFPc
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irfz34n equivalent
Abstract: diode c331
Text: PD - 9.1674A International IQ R Rectifier IRFIZ34E HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS ® • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated VDSS = 60V R d s o d
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IRFIZ34E
T0-220
irfz34n equivalent
diode c331
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Untitled
Abstract: No abstract text available
Text: PD - 9 .16 74 A International IÖ R Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package V dss = High Voltage Isolation = 2.5K V R M S CD Sink to Lead C reepage Dist. = 4.8m m ^D S on = Fully Avalanche Rated 60 V 0.042Î2
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IRFIZ34E
O-220
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