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1117s Abstract: transistor wc 2C vqe 24 d TO220AB IGBT PHPI IRGBC36 Text: INTERNATIONAL RECTIFIER 4Ö5S4S2 00l0bQ3 T • 2t.E D Data Sheet No. PD-9.668 • 7 3*?-03 - - International ÜH Rectifier INSULATED GATE BIPOLAR TRANSISTOR BOOV, 34A FEATURES 600V, 34A, TO-220AB IGBT International R ectifier’s IR G series of Insulated G ate	OCR Scan	PDF	00l0bG3 O-220AB 1117s transistor wc 2C vqe 24 d TO220AB IGBT PHPI IRGBC36
transistor tc 144 Abstract: IRGBC46 IRGBC30 IRGPC56 for IR IGBT die D50 transistor IRGBC26 IGBT die IRGCC50 IRGBC40 Text: International Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes Part Number BVc es Collector to Emitter Breakdown Voltage IRGBC20 VCE on Collector to Emitter Saturation Voltage (1) VGE(th) Gate to Emitter Threshold Voltage Min (V) Max	OCR Scan	PDF	IRGBC20 IRGBC26 IRGBC30 IRGBC36 IRGBC40 IRGBC46 -220AB O-247AC IRGPC40 IRGCC20 transistor tc 144 IRGBC46 IRGPC56 for IR IGBT die D50 transistor IGBT die IRGCC50
IRGBC36 Abstract: IRGBC46 IRGBC30 THOMSON 58E 02073 IRGPC50 IRGPC56 IRGPC THOMSON DISTRIBUTOR 58e d IRGBC20 Text: T H OH SO N/ ^D 2b a? 3 D O G S ? T b 4T4 • SflE D DISTRIBUTOR TCSK International llORl Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes VcE oo VQE(Ui) Gate to Emlttar Threshold Vottage Collector to Emitter Sateratkm Max (V) Typ 00	OCR Scan	PDF	IRGBC20 IRGBC26 IRGBC30 IRGBC36 IRGBC40 IRGBC46 IRGPC40 IRGPC46 IRGPC50 IRGPC56 IRGBC36 IRGBC46 THOMSON 58E 02073 IRGPC56 IRGPC THOMSON DISTRIBUTOR 58e d
IRF1644 Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003 Text: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.	OCR Scan	PDF	100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140 10D05-10010. 10DF1100F8 10JF1-10JF4. 10JQ030-10JQ100. 1OJTF10-10JTF40 10MQ040-10MQ090. IRF1644 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
IRF540 n-channel MOSFET Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.	OCR Scan	PDF	QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R