Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRGMC50U Search Results

    IRGMC50U Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGMC50U International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRGMC50U International Rectifier IGBT Scan PDF
    IRGMC50U Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGMC50U Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRGMC50U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRGMC50U

    Abstract: No abstract text available
    Text: PD -90719B IRGMC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses


    Original     		PDF -90719B IRGMC50U O-254AA. MIL-PRF-19500 IRGMC50U

    Untitled

    Abstract: No abstract text available
    Text: IRGMC50U Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)35 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.83 Thermal Resistance Junc-Amb.48 g(fe) Min. (S) Trans. admitt.16


    Original     		PDF IRGMC50U delay24nà time27nà time180nà ime27nÃ

    Untitled

    Abstract: No abstract text available
    Text: IRGMC50UD Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)35 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.83 Thermal Resistance Junc-Amb.48 g(fe) Min. (S) Trans. admitt.16


    Original     		PDF IRGMC50UD delay24nà time27nà time180nà me27nÃ

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


    Original     		PDF DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF

    2N6764 JANTX

    Abstract: 91447 IR2113L
    Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450


    Original     		PDF IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450 IRH7450SE 2N6764 JANTX 91447 IR2113L

    2N6782 JANTX

    Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
    Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE


    Original     		PDF IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX

    Untitled

    Abstract: No abstract text available
    Text: International pm a Hü Rectifier_ IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast™ IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50U O-254 IRGMC50UD IRGMC50UU G-105

    T3D 87

    Abstract: t3d 99 G-100 IRGMC50U
    Text: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50U IRGMC50U IRGMC50UD IRGMC50UU MIL-S-19500 O-254 G-105 T3D 87 t3d 99 G-100

    IG22

    Abstract: IRGAC50U
    Text: Government and Space Other Products from IR IGBT Hermetic Packages 6 0 0 - 1200V V BR CES v GE(th) MIN (V) (V) Part Number IRGAC30F IRGAC30U IRGAC40F IRGAC40U IRGAC50F IRGAC50U IRGMC30F IRGMC30U IRGMC40F IRGMC40U IRGMC50F IRGMC50U 600 3.0 Ej s TY P ic @ •c@


    OCR Scan     		PDF IRGAC30F IRGAC30U IRGAC40F IRGAC40U IRGAC50F IRGAC50U T0-204AE IRGMC30F IRGMC30U IRGMC40F IG22 IRGAC50U

    IRGAC50

    Abstract: MO036AA IRGAC50U IRGAC50F
    Text: HU m saa In t e r n a t i o n a l R e c t i f i e r Government and Space Products Control Integrated Circuits Vs Offset Supply Voltage Volts PMt Number Fax-onDemand Number lOUT VBS.VCC SupplyVoltage (Volts) Slnk, Source (Amps) Case Style, (CaseOutline) (1)


    OCR Scan     		PDF IR2110E IR2110E6 IR2110L IR2110L6 IR2125Z 10to20 250mA IRGAC50 MO036AA IRGAC50U IRGAC50F

    Ig21

    Abstract: No abstract text available
    Text: International Government and Space ig b t HORlRecBfier Hermetic Packages 6 0 0 -1200V V BR CES Part Number (V) v GE(th) MIN (V) ic @ ic @ v GE(th) M AX TC = 25°C TC = 100°C (V) E t s TY P PD Max. Power Outline Tj = 125 Dissipation Number (m J) (A) IRGAC30F


    OCR Scan     		PDF -1200V IRGAC30F IRGAC30U IRGAC40F IRGAC40U IRGAC50F IRGAC50U T0-204AE IRGMC30F IRGMC30U Ig21