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    IRM 1200 Search Results

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    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
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    Samtec Inc IRM1-20-01-T-TR

    Conn Wire to Board F 40 POS 1mm Solder ST SMD T/R - Tape and Reel (Alt: IRM1-20-01-T-TR)
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    IRM 1200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HFA25TB60

    Abstract: 36MT160 26MT120 36MB60A IR hfa06tb120 HFA16PB120 36MB60A MBR2
    Text: 2011-2012:QuarkCatalogTempNew 9/11/12 9:34 AM Page 2011 25 Diodes RoHS Square, 25 Amp Square, 35 Amp Continued Mfr.’s Type @ TC (°C) IF (AV) IRM (mA) VFM @ 25° C (V) VRRM (V) Package EACH Stock No. Mfr.’s Type @ TC (°C) IF (AV) IRM (mA) VFM @ 25°C


    Original     		PDF 26MB05A 26MB10A 26MB20A 26MB40A 26MB60A 26MB80A 26MB100A 26MB120A 26MB160A D-34A HFA25TB60 36MT160 26MT120 36MB60A IR hfa06tb120 HFA16PB120 36MB60A MBR2

    HF50C120ACE

    Abstract: hf50c120
    Text: PD - 2.598 Preliminary HF50C120ACE HF50C120ACE Hexfred Die in Wafer Form 1200 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF HF50C120ACE HF50C120ACE hf50c120

    HFA16PB120

    Abstract: HF40C120ACB
    Text: Previous Datasheet Index Next Data Sheet PD-2.497 TARGET HF40C120ACB HF40C120ACB Hexfred Die in Wafer Form 1200 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current


    Original     		PDF HF40C120ACB HF40C120ACB HFA16PB120 HFA16PB120

    HF30C120ACB

    Abstract: HFA08PB120
    Text: Previous Datasheet Index Next Data Sheet PD-2.499 TARGET HF30C120ACB HF30C120ACB Hexfred Die in Wafer Form 1200 V Size 30 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current


    Original     		PDF HF30C120ACB HF30C120ACB HFA08PB120 HFA08PB120

    HF40C120ACB

    Abstract: HFA16PB120
    Text: PD-2.497 TARGET HF40C120ACB HF40C120ACB Hexfred Die in Wafer Form 1200 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 2.6V Max.


    Original     		PDF HF40C120ACB HF40C120ACB HFA16PB120 HFA16PB120

    HF30C120ACE

    Abstract: HFA08PB120
    Text: Previous Datasheet Index Next Data Sheet PD - 2.502 TARGET HF30C120ACE HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current


    Original     		PDF HF30C120ACE HF30C120ACE HFA08PB120

    HF30C120ACB

    Abstract: HFA08PB120
    Text: PD-2.499 TARGET HF30C120ACB HF30C120ACB Hexfred Die in Wafer Form 1200 V Size 30 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 2.8V Max.


    Original     		PDF HF30C120ACB HF30C120ACB HFA08PB120 HFA08PB120

    HF30C120ACE

    Abstract: HFA08PB120
    Text: PD - 2.502 TARGET HF30C120ACE HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 2.8V Max.


    Original     		PDF HF30C120ACE HF30C120ACE HFA08PB120

    HF51C120ACE

    Abstract: HFA30PB120
    Text: Preliminary Data Sheet PD-20609 11/98 HF51C120ACE Hexfred Die in Wafer Form 1200 V Size 51 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20609 HF51C120ACE 125mm, HFA30PB120 HF51C120ACE HFA30PB120

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD-20502 rev. B 2/04 HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20502 HF30C120ACE 150mm, HFA08PB120

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD-20598 rev. B 11/98 HF50C120ACE Hexfred Die in Wafer Form 1200 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20598 HF50C120ACE HFA30PB120 125mm,

    HFA32PB120

    Abstract: HF50C120ACB
    Text: Previous Datasheet Index Next Data Sheet PD-2.496 TARGET HF50C120ACB HF50C120ACB Hexfred Die in Wafer Form 1200 V Size 50 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current


    Original     		PDF HF50C120ACB HF50C120ACB HFA32PB120

    HF51C120ACE

    Abstract: HFA30PB120
    Text: Preliminary Data Sheet PD-20609 11/98 HF51C120ACE Hexfred Die in Wafer Form 1200 V Size 51 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20609 HF51C120ACE 12-Mar-07 HF51C120ACE HFA30PB120

    20613

    Abstract: SHEET METAL tolerance HF20C120ACE HFA06TB120
    Text: Preliminary Data Sheet PD-20613 11/98 HF20C120ACE Hexfred Die in Wafer Form 1200 V Size 20 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20613 HF20C120ACE 125mm, HFA06TB120 20613 SHEET METAL tolerance HF20C120ACE HFA06TB120

    WAFER

    Abstract: HF50C120ACE HFA30PB120
    Text: Preliminary Data Sheet PD-20598 rev. B 11/98 HF50C120ACE Hexfred Die in Wafer Form 1200 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20598 HF50C120ACE 125mm, HFA30PB120 WAFER HF50C120ACE HFA30PB120

    R8120S3S

    Abstract: R8120S3 16A200 r8120p Diode 1200V 8A
    Text: ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth Diode General Description Features The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft


    Original     		PDF ISL9R8120P2 ISL9R8120S3S ISL9R8120S3S R8120S3 ISL9R8120S3ST O-263 R8120S3S R8120S3 16A200 r8120p Diode 1200V 8A

    Untitled

    Abstract: No abstract text available
    Text: ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth Diode General Description Features The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft


    Original     		PDF ISL9R8120P2 ISL9R8120S3S ISL9R8120S3S

    HFA16PB120

    Abstract: HF40C120ACE
    Text: Preliminary Data Sheet PD-20497 rev. A 11/98 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20497 HF40C120ACE 125mm, HFA16PB120 HFA16PB120 HF40C120ACE

    R8120P2

    Abstract: r8120 R8120S3S AN-7528 ISL9R8120P2 ISL9R8120S3S r8120p
    Text: ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth Diode General Description Features The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft


    Original     		PDF ISL9R8120P2 ISL9R8120S3S ISL9R8120S3S R8120P2 r8120 R8120S3S AN-7528 r8120p

    HF40C120ACE

    Abstract: HFA16PB120
    Text: Preliminary Data Sheet PD-20497A rev. B 2/5/04 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20497A HF40C120ACE 12-Mar-07 HF40C120ACE HFA16PB120

    HF30C120ACE

    Abstract: HFA08PB120
    Text: Preliminary Data Sheet PD-20502 rev. B 2/04 HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20502 HF30C120ACE 12-Mar-07 HF30C120ACE HFA08PB120

    R8120P2

    Abstract: Fast Recovery Diodes Cross Reference ISL9R8120P2
    Text: ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth Diode General Description Features The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft


    Original     		PDF ISL9R8120P2 ISL9R8120S3S ISL9R8120S3S O-220 R8120P2 R8120P2 Fast Recovery Diodes Cross Reference

    HF30C120ACE

    Abstract: HFA08PB120 PD-20502
    Text: Preliminary Data Sheet PD-20502 rev. A 11/98 HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20502 HF30C120ACE 125mm, HFA08PB120 HF30C120ACE HFA08PB120

    HF40C120ACE

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD-20497 rev. A 11/98 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20497 HF40C120ACE HFA16PB120 125mm, HF40C120ACE