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    ISL9N3 Price and Stock

    UMW ISL9N306AD3ST

    MOSFET N-CH 30V 50A DPAK
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    DigiKey ISL9N306AD3ST Reel 2,500 2,500
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    ISL9N306AD3ST Cut Tape 2,500 1
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    ISL9N306AD3ST Digi-Reel 2,500 1
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    Rochester Electronics LLC ISL9N304AP3

    N-CHANNEL POWER MOSFET
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    DigiKey ISL9N304AP3 Bulk 460
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    Rochester Electronics LLC ISL9N312AD3

    N-CHANNEL POWER MOSFET
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    DigiKey ISL9N312AD3 Bulk 1,025
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    Rochester Electronics LLC ISL9N315AD3

    N-CHANNEL POWER MOSFET
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    DigiKey ISL9N315AD3 Bulk 833
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    onsemi ISL9N302AP3

    MOSFET N-CH 30V 75A TO220-3
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    ISL9N3 Datasheets (60)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ISL9N302AP3 Fairchild Semiconductor N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs Original PDF
    ISL9N302AP3 Fairchild Semiconductor N-Channel Logic Level PWM Optimized UltraFET Tren Original PDF
    ISL9N302AS3 Fairchild Semiconductor Product information Original PDF
    ISL9N302AS3S Fairchild Semiconductor ISL9N302AS3 is a Power MOSFET Transistor. Original PDF
    ISL9N302AS3ST Fairchild Semiconductor N-Channel Logic Level PWM Optimized UltraFET Tren Original PDF
    ISL9N302AS3ST_NL Fairchild Semiconductor N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs Original PDF
    ISL9N303AP3 Fairchild Semiconductor N-Channel Logic Level UltraFET Trench MOSFET Original PDF
    ISL9N303AP3 Fairchild Semiconductor N-Channel Logic Level UltraFET Trench MOSFETs Original PDF
    ISL9N303AP3_NL Fairchild Semiconductor N-Channel Logic Level UltraFET Trench MOSFETs Original PDF
    ISL9N303AS3 Fairchild Semiconductor N-Channel Logic Level UltraFETR Trench MOSFETs 30V Original PDF
    ISL9N303AS3ST Fairchild Semiconductor N-Channel Logic Level UltraFET Trench MOSFET Original PDF
    ISL9N303AS3ST_NL Fairchild Semiconductor N-Channel Logic Level UltraFET Trench MOSFETs Original PDF
    ISL9N304AP3 Fairchild Semiconductor N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5 ? Original PDF
    ISL9N304AP3 Fairchild Semiconductor N-Channel Logic Level UltraFET R Trench MOSFETs 30 Original PDF
    ISL9N304AS3ST Fairchild Semiconductor N-Channel Logic Level UltraFET R Trench MOSFETs 30 Original PDF
    ISL9N305ASK8T Fairchild Semiconductor N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFET Original PDF
    ISL9N306AD3 Fairchild Semiconductor N-Channel Logic Level PWM Optimized UltraFET R Tre Original PDF
    ISL9N306AD3ST Fairchild Semiconductor N-Channel Logic Level PWM Optimized UltraFET R Tre Original PDF
    ISL9N306AP3 Fairchild Semiconductor N-Channel Logic Level PWM Optimized UltraFET Tren Original PDF
    ISL9N306AP3 Fairchild Semiconductor N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs Original PDF

    ISL9N3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ISL9N307AP3

    Abstract: ISL9N307AS3ST N307AS
    Text: ISL9N307AP3/ISL9N307AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N307AP3/ISL9N307AS3ST 3000pF O-263AB O-220AB ISL9N307AP3 ISL9N307AS3ST N307AS PDF

    AN9321

    Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
    Text: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features


    Original     		ISL9N312ASK8T ISL9N312ASK8 MS-012AA AN9321 AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS PDF

    Untitled

    Abstract: No abstract text available
    Text: PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N308AP3/ISL9N308AS3ST 2600pF O-263AB O-220 PDF

    n312ad

    Abstract: No abstract text available
    Text: PWM Optimized ISL9N312AD3ST/ ISL9N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N312AD3ST/ ISL9N312AD3 1450pF O-252 O-252) O-251AA) n312ad PDF

    n322ad

    Abstract: No abstract text available
    Text: PWM Optimized ISL9N322AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022Ω General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N322AD3ST 970pF O-252 n322ad PDF

    N304AP

    Abstract: ISL9N304AP3 ISL9N304AS3ST TC146
    Text: PWM Optimized ISL9N304AP3/ISL9N304AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N304AP3/ISL9N304AS3ST 4075pF O-263 N304AP ISL9N304AP3 ISL9N304AS3ST TC146 PDF

    N322AP

    Abstract: ISL9N322AS3ST N322A ISL9N322AP3 7E10 N322 N322AS
    Text: ISL9N322AP3/ISL9N322AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N322AP3/ISL9N322AS3ST 970pF O-263AB O-220AB N322AP ISL9N322AS3ST N322A ISL9N322AP3 7E10 N322 N322AS PDF

    Untitled

    Abstract: No abstract text available
    Text: ISL9N305ASK8T N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves


    Original     		ISL9N305ASK8T 4260pF PDF

    FQP630

    Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
    Text: Discrete MOSFET TO-220 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220 N-Channel ISL9N302AP3 30 Single 0.0025 0.0033 - - 110 75 345 FDP8030L 30 Single 0.0035 0.0045


    Original     		O-220 O-220 ISL9N302AP3 FDP8030L ISL9N303AP3 FDP7045L ISL9N304AP3 FDP6676 FDP6670AL SFP9Z24 FQP630 FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A PDF

    n310ad

    Abstract: ISL9N310AD3
    Text: ISL9N310AD3, ISL9N310AD3S3T TM Data Sheet November 2000 File Number 30V, 0.010 Ohm, 35A, N-Channel Logic Level UltraFET Trench Power MOSFETs PWM Optimized This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining


    Original     		ISL9N310AD3, ISL9N310AD3S3T ISL9N310AD3ST O-252AA ISL9N310AD3 O-251AA n310ad ISL9N310AD3 PDF

    n308ad

    Abstract: ISL9N308AD3ST N-308 35KP ISL9N308AD3
    Text: PWM Optimized ISL9N308AD3 / ISL9N308AD3ST N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N308AD3 ISL9N308AD3ST 2600pF O-251AA) O-252 O-252) n308ad ISL9N308AD3ST N-308 35KP PDF

    N310AS

    Abstract: N310AP ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST
    Text: ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 1800pF N310AS N310AP ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST PDF

    n318ad

    Abstract: ISL9N318AD3ST
    Text: ISL9N318AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N318AD3ST 900pF O-252 n318ad ISL9N318AD3ST PDF

    N306AS

    Abstract: n306a ISL9N306AP3 ISL9N306AS3ST 45E-2
    Text: ISL9N306AP3/ISL9N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N306AP3/ISL9N306AS3ST 3400pF O-263AB O-220AB N306AS n306a ISL9N306AP3 ISL9N306AS3ST 45E-2 PDF

    N308AP

    Abstract: 35KP ISL9N308AP3 ISL9N308AS3ST
    Text: PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N308AP3/ISL9N308AS3ST 2600pF O-263AB N308AP 35KP ISL9N308AP3 ISL9N308AS3ST PDF

    n322ad

    Abstract: ISL9N322AD3ST N-322 N322 16E-3
    Text: PWM Optimized ISL9N322AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022Ω General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N322AD3ST 970pF O-252 n322ad ISL9N322AD3ST N-322 N322 16E-3 PDF

    ISL9N303AP3

    Abstract: ISL9N303AS3 ISL9N303AS3ST N303AP N303AS diode marking 41a on semiconductor KP20
    Text: PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining


    Original     		ISL9N303AP3 ISL9N303AS3ST ISL9N303AS3 7000pF ISL9N303AS3 N303AP N303AS diode marking 41a on semiconductor KP20 PDF

    N316AD

    Abstract: No abstract text available
    Text: ISL9N316AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N316AD3ST 1450pF O-252 N316AD PDF

    n310ad

    Abstract: ISL9N310AD3 40e5
    Text: ISL9N310AD3, ISL9N310AD3S3T Data Sheet November 2000 File Number 30V, 0.010 Ohm, 35A, N-Channel Logic Level UltraFET Trench Power MOSFETs PWM Optimized This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining


    Original     		ISL9N310AD3, ISL9N310AD3S3T 1800pF n310ad ISL9N310AD3 40e5 PDF

    n327ad

    Abstract: ISL9N327AD3ST
    Text: ISL9N327AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N327AD3ST 910pF O-252 n327ad ISL9N327AD3ST PDF

    n310ad

    Abstract: No abstract text available
    Text: ISL9N310AD3/ISL9N310AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N310AD3/ISL9N310AD3ST 1800pF O-252 O-251 n310ad PDF

    ISL9N305ASK8T

    Abstract: 76T marking
    Text: ISL9N305ASK8T N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves


    Original     		ISL9N305ASK8T 4260pF ISL9N305ASK8T 76T marking PDF

    N316A

    Abstract: No abstract text available
    Text: ISL9N316AP3, ISL9N316AS3ST TM Data Sheet January 2001 File Number 30V, 0.0155 Ohm, 48A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N316AP3, ISL9N316AS3ST N316A PDF

    Untitled

    Abstract: No abstract text available
    Text: ISL9N310AP3, ISL9N310AS3ST TM Data Sheet November 2000 File Number 30V, 0.010 Ohm, 62A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N310AP3, ISL9N310AS3ST PDF