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    Abracon Corporation AISS-1812-R10M

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    Bristol Electronics AISS-1812-R10M 965
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    ISS181 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ISS181 Toshiba Transistor - Datasheet Reference Scan PDF

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    ISS181

    Abstract: 1SS181 MARKING A3
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.92V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. CATHODE MARKING: A3 2. CATHODE 3. ANODE


    Original     		PDF OT-23 1SS181 OT-23 100mA ISS181 ISS181 1SS181 MARKING A3

    MARKING N20 SOT-343

    Abstract: ISS181 Switching Diode SOT23 Marking 3D DIODE sot-23 Marking 3D MARKING 3B SOT23-6 marking RA4 sot23 SC74A SC-88A footprint Switching Diode SC-59 Marking 3D ISS181-L
    Text: S W I T C H I N G D I O D E A R R AY S HIGH SPEED SWITCHING DIODE ARRAYS 1/3A 1/3B 1 2 1 1/3C 2 3 1 2 3 2/4 2 3 4 1 2 2 1 5 3 1 2 1 2 4/6A 3 4/6B 5 4 5 6 4 5 6 4 5 6 1 3 2 1 3 2 1 3 2 1 The latest comprehensive data to fully support these parts is readily available.


    Original     		PDF BAS16 BAV70 BAV99 BAV99U BAW56 DA121 DA114 DAN212K DAN222 DAN202U MARKING N20 SOT-343 ISS181 Switching Diode SOT23 Marking 3D DIODE sot-23 Marking 3D MARKING 3B SOT23-6 marking RA4 sot23 SC74A SC-88A footprint Switching Diode SC-59 Marking 3D ISS181-L