Untitled
Abstract: No abstract text available
Text: 3LN02M Ordering number : EN6128A N-Channel Silicon MOSFET 3LN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
|
Original
|
PDF
|
3LN02M
EN6128A
|
70306
Abstract: MCH6615 IT0251
Text: MCH6615 Ordering number : EN6796A SANYO Semiconductors DATA SHEET MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low
|
Original
|
PDF
|
MCH6615
EN6796A
MCH6615
70306
IT0251
|
MCH6608
Abstract: No abstract text available
Text: MCH6608 Ordering number : EN7040A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6608 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
PDF
|
MCH6608
EN7040A
MCH6608
|
en6128
Abstract: 3LN02M D1099 marking YD
Text: 3LN02M Ordering number : EN6128A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
3LN02M
EN6128A
en6128
3LN02M
D1099
marking YD
|
Untitled
Abstract: No abstract text available
Text: 3LN02C Ordering number : EN6362A N-Channel Silicon MOSFET 3LN02C General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
|
Original
|
PDF
|
3LN02C
EN6362A
|
Untitled
Abstract: No abstract text available
Text: MCH6608 Ordering number : EN7040A N-Channel Silicon MOSFET MCH6608 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
PDF
|
MCH6608
EN7040A
|
Untitled
Abstract: No abstract text available
Text: MCH6615 Ordering number : EN6796A MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.
|
Original
|
PDF
|
MCH6615
EN6796A
MCH6615
|
TA-2952
Abstract: marking YD TA-295
Text: Ordering number : ENN6549 3LN02N N-Channel Silicon MOSFET 3LN02N Ultrahigh-Speed Switching Applications Features • • Low ON resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2178 [3LN02N] 5.0 4.0 4.0 5.0 • Package Dimensions 0.6 2.0 0.45 0.5
|
Original
|
PDF
|
ENN6549
3LN02N
3LN02N]
TA-2952
marking YD
TA-295
|
MCH6608
Abstract: 70-402
Text: MCH6608 注文コード No. N 7 0 4 0 A 三洋半導体データシート 半導体ニューズ No.N7040 とさしかえてください。 MCH6608 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
|
Original
|
PDF
|
MCH6608
N7040
900mm2
150mA
150mA,
900mm2
IT00235
IT00234
IT03638
MCH6608
70-402
|
en6128
Abstract: No abstract text available
Text: 3LN02M Ordering number : EN6128A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
EN6128A
3LN02M
en6128
|
IT0251
Abstract: MCH6615
Text: Ordering number : ENN6796 MCH6615 N-Channel and P-Channel Silicon MOSFETs MCH6615 Ultrahigh-Speed Switching Applications • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs,
|
Original
|
PDF
|
ENN6796
MCH6615
MCH6615
MCH6615]
IT0251
|
marking YD
Abstract: No abstract text available
Text: Ordering number:ENN6128 N-Channel Silicon MOSFET 3LN02M Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2158 0.3 0.2 0.425 [3LN02M] 0.15 3 0.425 2.1 1.250 0 to 0.1
|
Original
|
PDF
|
ENN6128
3LN02M
3LN02M]
marking YD
|
CPH6605
Abstract: No abstract text available
Text: 注文コード No. N 7 1 8 3 CPH6605 三洋半導体データシート N CPH6605 特長 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ ロードスイッチング用 ・低オン抵抗超高速スイッチングの P チャネルおよび P チャネル MOS ドライブ用の小信号 N チャネル
|
Original
|
PDF
|
CPH6605
900mm2
900mm2
IT00235
IT04068
IT04069
CPH6605
|
IT0251
Abstract: MCH6615 TA2910
Text: MCH6615 注文コード No. N 6 7 9 6 A 三洋半導体データシート 半導体ニューズ No.N6796 をさしかえてください。 MCH6615 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
|
Original
|
PDF
|
MCH6615
N6796
900mm2
150mA
150mA,
10his
900mm2
IT02520
--10V
IT0251
MCH6615
TA2910
|
|
|
MCH6608
Abstract: No abstract text available
Text: Ordering number : ENN7040 MCH6608 N-Channel Silicon MOSFET MCH6608 Ultrahigh-Speed Switching Applications Preliminary • 0.25 2.1 • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single
|
Original
|
PDF
|
ENN7040
MCH6608
MCH6608]
MCH6608
|
marking YD
Abstract: No abstract text available
Text: Ordering number:ENN6362 N-Channel Silicon MOSFET 3LN02C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A [3LN02C] 0.5 0.4 0.16 0 to 0.1 1 : Gate 2 : Source 3 : Drain
|
Original
|
PDF
|
ENN6362
3LN02C
3LN02C]
marking YD
|
6550-3
Abstract: No abstract text available
Text: Ordering number : ENN6550 3LN02SP N-Channel Silicon MOSFET 3LN02SP Ultrahigh-Speed Switching Applications Features • • Low ON resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2180 [3LN02SP] 4.0 2.2 3.0 • Package Dimensions 15.0 0.6 1.8 0.4
|
Original
|
PDF
|
ENN6550
3LN02SP
3LN02SP]
6550-3
|
IT0251
Abstract: MCH6615 Diode catalog
Text: MCH6615 Ordering number : EN6796A SANYO Semiconductors DATA SHEET MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low
|
Original
|
PDF
|
MCH6615
EN6796A
MCH6615
IT0251
Diode catalog
|
MCH6608
Abstract: No abstract text available
Text: MCH6608 Ordering number : EN7040A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6608 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
PDF
|
MCH6608
EN7040A
900mm2
MCH6608
|
3LN02C
Abstract: TA-2848 marking yd en6362a
Text: 3LN02C Ordering number : EN6362A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN02C General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
3LN02C
EN6362A
3LN02C
TA-2848
marking yd
en6362a
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6796 N-Channel and P-Channel Silicon MOSFETs MCH6615 ISMÊYOi Ultrahigh-Speed Switching Applications Features Package Dimensions • The M CH 6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching M O SFE T s,
|
OCR Scan
|
PDF
|
ENN6796
MCH6615
MCH6615]
|