diode RL-250
Abstract: No abstract text available
Text: Ordering number:ENN6130 N-Channel Silicon MOSFET 5LN02M Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2158 0.3 0.2 0.425 [5LN02M] 0.15 3 0.425 2.1 1.250 0 to 0.1
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ENN6130
5LN02M
5LN02M]
diode RL-250
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Untitled
Abstract: No abstract text available
Text: MCH6610 Ordering number : EN7042A N-Channel Silicon MOSFET MCH6610 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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MCH6610
EN7042A
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bx 18A
Abstract: 2SJ268 ITR00278 ITR00279 ITR00280 ITR00281 ITR00282
Text: 注文コード No.N 4 2 3 7 2SJ268 No. 4 2 3 7 三洋半導体ニューズ 61599 新 2SJ268 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。
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2SJ268
IT00284
--30V
--10V
ITR00282
IT00285
IT00286
IT00287
bx 18A
2SJ268
ITR00278
ITR00279
ITR00280
ITR00281
ITR00282
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MCH6610
Abstract: TA-2465
Text: MCH6610 注文コード No. N 7 0 4 2 A 三洋半導体データシート 半導体ニューズ No.N7042 とさしかえてください。 MCH6610 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
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MCH6610
N7042
900mm2
100mA
100mA,
900mm2
IT00285
IT00284
IT03640
MCH6610
TA-2465
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MCH6610
Abstract: No abstract text available
Text: Ordering number : ENN7042 MCH6610 N-Channel Silicon MOSFET MCH6610 Ultrahigh-Speed Switching Applications Preliminary • 0.25 2.1 • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single
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ENN7042
MCH6610
MCH6610]
MCH6610
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Untitled
Abstract: No abstract text available
Text: 5LN02M Ordering number : EN6130A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5LN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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EN6130A
5LN02M
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6538 N-Channel Silicon MOSFET 5LN02N Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2178 [5LN02N] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45
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ENN6538
5LN02N
5LN02N]
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TA-2772
Abstract: No abstract text available
Text: Ordering number : ENN6415 5LN02C N-Channel Silicon MOSFET 5LN02C Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2091A 0.4 0.16 0 to 0.1 1 : Gate 2 : Source
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ENN6415
5LN02C
5LN02C]
TA-2772
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6539 N-Channel Silicon MOSFET 5LN02SP Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2180 [5LN02SP] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 3
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ENN6539
5LN02SP
5LN02SP]
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MCH6610
Abstract: No abstract text available
Text: MCH6610 Ordering number : EN7042A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6610 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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MCH6610
EN7042A
900mm2
MCH6610
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Untitled
Abstract: No abstract text available
Text: 5LN02M Ordering number : EN6130A N-Channel Silicon MOSFET 5LN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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5LN02M
EN6130A
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Untitled
Abstract: No abstract text available
Text: 5LN02C Ordering number : EN6415A 5LN02C N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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5LN02C
EN6415A
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5LN02C
Abstract: No abstract text available
Text: 5LN02C Ordering number : EN6415A SANYO Semiconductors DATA SHEET 5LN02C N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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5LN02C
EN6415A
5LN02C
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MCH6610
Abstract: No abstract text available
Text: MCH6610 Ordering number : EN7042A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6610 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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MCH6610
EN7042A
MCH6610
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5LN02N
Abstract: No abstract text available
Text: 注文コード No. N 6 5 3 8 5LN02N No. N6538 63000 新 5LN02N N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 特長 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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5LN02N
N6538
100mA
100mA,
IT00280
IT00278
IT00284
IT00285
5LN02N
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