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    IT025 Search Results

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    Adam Technologies Inc RF55-34I-T-02-50-SH

    FAKRA JACK SMB TYPE: STRAIGHT FO
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    DigiKey RF55-34I-T-02-50-SH Bag 788 1
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    Mouser Electronics RF55-34I-T-02-50-SH
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    RS RF55-34I-T-02-50-SH Bulk 12 Weeks 1,000
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    AC Connectors EPL1420KIT-025

    L14-20 Inlet and 25ft Cord Kit
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    DigiKey EPL1420KIT-025 Ammo Pack 10 1
    • 1 $158.09
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    AC Connectors EPL1430KIT-025

    L14-30 Inlet and 25ft Cord Kit
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    DigiKey EPL1430KIT-025 Ammo Pack 10 1
    • 1 $203.99
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    DFRobot FIT0257

    SOLENOID ROTARY 4.5-6V
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    DigiKey FIT0257 Bulk 1
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    DFRobot FIT0254

    PEEK INSULATOR
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    DigiKey FIT0254 Bulk 1
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    IT025 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6665 2SC5699 NPN Triple Diffused Planar Silicon Transistor 2SC5699 CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


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    PDF ENN6665 2SC5699 2SC5699]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6609 2SJ289 P-Channel Silicon MOSFET 2SJ289 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. unit : mm 2062A [2SJ289] 4.5 1.6 0.4 1.0 2.5 4.25max


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    PDF ENN6609 2SJ289 2SJ289] 25max

    MCH6614

    Abstract: No abstract text available
    Text: Ordering number : ENN6795 MCH6614 N-Channel and P-Channel Silicon MOSFET MCH6614 Ultrahigh-Speed Switching Applications • The MCH6614 incorporates two elements that are an unit : mm N-channel and a P-channel MOSFETs that feature low 2173 ON resistance and high-speed switching, thereby


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    PDF ENN6795 MCH6614 MCH6614 MCH6614]

    2SJ289

    Abstract: No abstract text available
    Text: Ordering number : ENN6609 2SJ289 P-Channel Silicon MOSFET 2SJ289 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. unit : mm 2062A [2SJ289] 4.5 1.6 0.4 1.0 2.5 4.25max


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    PDF ENN6609 2SJ289 2SJ289] 25max 2SJ289

    2SJ609

    Abstract: TA-2920
    Text: Ordering number : ENN6671 2SJ609 P-Channel Silicon MOSFET 2SJ609 DC / DC Converter Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2190 [2SJ609] 8.0 3.3 1.4 4.0 1.0 1.0 1.5 7.5 3.0 11.0 • Package Dimensions


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    PDF ENN6671 2SJ609 2SJ609] O-126ML 2SJ609 TA-2920

    MOSFET 2906

    Abstract: TA-2906 MCH6303 N1500
    Text: Ordering number : ENN6778 MCH6303 P-Channel Silicon MOSFET MCH6303 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2193 [MCH6303] 0.25 • Package Dimensions 0.3 5 2 3 0.65 0.25 1 0.15


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    PDF ENN6778 MCH6303 MCH6303] MOSFET 2906 TA-2906 MCH6303 N1500

    2SK3449

    Abstract: No abstract text available
    Text: Ordering number : ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2190 [2SK3449] 8.0 3.3 1.5 7.5 3.0 11.0 1.4 4.0 1.0


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    PDF ENN6672 2SK3449 2SK3449] O-126ML 2SK3449

    2sc5696

    Abstract: 2SC5696 equivalent TA-3207 2sc5696 transistor using of damper in Horizontal Output Transistor TA-2994
    Text: Ordering number : ENN6663A 2SC5696 NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).


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    PDF ENN6663A 2SC5696 2SC5696] 2sc5696 2SC5696 equivalent TA-3207 2sc5696 transistor using of damper in Horizontal Output Transistor TA-2994

    SPW 078

    Abstract: pst 39 transformer Wabash Transformer spw -136 spw+-079+transformer 4-07-7016 MT12/SPW 078 spw -055 transformer pc-24-450 TRANSFORMER 4-44-5010
    Text: WabashTransformer.com ● Class 2, VDE, UL, CSA Recognized ● Zero Defect, 100 % Tested ● Competitive Prices ● Standard & Custom Designs ● 2 Year Warranty Table of Contents Product Description Class 2 CL UL5085-3 Transformer International Power Transformer


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    PDF UL5085-3 SPW 078 pst 39 transformer Wabash Transformer spw -136 spw+-079+transformer 4-07-7016 MT12/SPW 078 spw -055 transformer pc-24-450 TRANSFORMER 4-44-5010

    70306

    Abstract: MCH6615 IT0251
    Text: MCH6615 Ordering number : EN6796A SANYO Semiconductors DATA SHEET MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low


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    PDF MCH6615 EN6796A MCH6615 70306 IT0251

    IT0251

    Abstract: ta2909 MCH6614 TA-2909
    Text: MCH6614 注文コード No. N 6 7 9 5 A 三洋半導体データシート 半導体ニューズ No.N6795 をさしかえてください。 MCH6614 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


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    PDF MCH6614 N6795 900mm2 --200mA 900mm2 IT02517 IT02516 IT02518 IT0251 ta2909 MCH6614 TA-2909

    2062a

    Abstract: 2SJ289 2SJ28 18V00
    Text: 注文コード No. N 6 6 0 9 2SJ289 No. N 6 6 0 9 90100 新 2SJ289 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


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    PDF 2SJ289 250mm2 250mA 250mA, IT02292 IT02293 IT02289 --10V 2062a 2SJ289 2SJ28 18V00

    2SC5699

    Abstract: rl66
    Text: Ordering number : ENN6665A 2SC5699 NPN Triple Diffused Planar Silicon Transistor 2SC5699 CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


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    PDF ENN6665A 2SC5699 2SC5699] 2SC5699 rl66

    SVC325

    Abstract: IT0251
    Text: Ordering number : ENN6649 SVC325 Diffused Junction Type Silicon Diode SVC325 Varactor Diode • • Package Dimensions Miniaturization and high-integration of tuner sets can be easily achieved due to the small package. High capacitance ratio and high quality factor.


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    PDF ENN6649 SVC325 SVC325] SVC325 IT0251

    TA-2474

    Abstract: FTS1011 S1011 ta2474 A3100
    Text: Ordering number : ENN7003 FTS1011 P-Channel Silicon MOSFET FTS1011 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. 2.5V drive. Mounting height 1.1mm. unit : mm 2147A [FTS1011] 3.0 0.65 5 4.5 6.4 0.5 8 0.425 0.95


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    PDF ENN7003 FTS1011 FTS1011] TA-2474 FTS1011 S1011 ta2474 A3100

    2SK3448

    Abstract: N1500 TA-2921
    Text: Ordering number : ENN6785 2SK3448 N-Channel Silicon MOSFET 2SK3448 Ultrahigh-Speed Switching Use Features • • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Meets radial taping. unit : mm 2087A [2SK3448] 2.5 1.45 1.0


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    PDF ENN6785 2SK3448 2SK3448] 2SK3448 N1500 TA-2921

    MCH6403

    Abstract: TA-2908 N1500
    Text: Ordering number : ENN6780 MCH6403 N-Channel Silicon MOSFET MCH6403 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2193 [MCH6403] 0.25 • Package Dimensions 0.3 5 2 3 0.65 0.25 1 0.15


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    PDF ENN6780 MCH6403 MCH6403] MCH6403 TA-2908 N1500

    MCH6626

    Abstract: No abstract text available
    Text: MCH6626 Ordering number : ENN7918 N-Channel and P-Channel Silicon MOSFETs MCH6626 General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling


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    PDF MCH6626 ENN7918 MCH6626] MCH6626

    Untitled

    Abstract: No abstract text available
    Text: MCH6626 MCH6626 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 5 6 3 2 0.65 1 0.15 0.07 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling


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    PDF MCH6626 MCH6626] MCH6626 ENN7918 MCH6626/D

    Untitled

    Abstract: No abstract text available
    Text: MCH6615 Ordering number : EN6796A MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.


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    PDF MCH6615 EN6796A MCH6615

    IT0251

    Abstract: No abstract text available
    Text: Ordering number : ENN6649 Diffused Junction Type Silicon Diode SVC325 IS M iY O l Varactor Diode Features Package Dimensions • Miniaturization and high-integration o f tuner sets can be easily achieved due to the small package. • High capacitance ratio and high quality factor.


    OCR Scan
    PDF ENN6649 SVC325 SVC325] IT0251

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6795 N-Channel and P-Channel Silicon MOSFET MCH6614 SAÜYO Ultrahigh-Speed Switching Applications Features Package Dimensions • The M CH 6614 incorporates two elements that are an N-channel and a P-channel M O SF E T s that feature low


    OCR Scan
    PDF ENN6795 MCH6614 MCH6614]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: ENN6787 P-Channel Silicon MOSFET FSS140 Load Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 4.0V drive. unit : mm 2116 [FSS140] R H . . H R 1 : Source 2 : Source 3 : Source B 1 T Ï Ï


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    PDF ENN6787 FSS140 FSS140]

    transistor SM 2174

    Abstract: tt2050 ENN6674 IT025
    Text: Ordering number : ENN6674 j _ NPN Triple Diffused Planar Silicon Transistor TT2050 IsatlYOl Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed.


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    PDF ENN6674 TT2050 TT2050] transistor SM 2174 tt2050 IT025