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Catalog Datasheet	MFG & Type	PDF	Document Tags
82306 Abstract: marking WZ 3HP04MH A0445 Text: 3HP04MH Ordering number : ENA0445 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings	Original	PDF	3HP04MH ENA0445 900mm2 A0445-4/4 82306 marking WZ 3HP04MH A0445
A0639-3 Abstract: SSFP package IT11215 A0639 Text: 3HP04SS Ordering number : ENA0639 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04SS General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter	Original	PDF	3HP04SS ENA0639 145mm80mm1 A0639-4/4 A0639-3 SSFP package IT11215 A0639
EC4305C Abstract: No abstract text available Text: EC4305C Ordering number : ENA0874 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4305C General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C	Original	PDF	EC4305C ENA0874 A0874-4/4 EC4305C
Untitled Abstract: No abstract text available Text: SCH2309 Ordering number : ENA0876 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2309 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.	Original	PDF	SCH2309 ENA0876 900mm20 A0876-4/4
3HP04CH Abstract: No abstract text available Text: 3HP04CH Ordering number : ENA0873 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04CH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage	Original	PDF	3HP04CH ENA0873 900mm20 A0873-4/4 3HP04CH
IT11215 Abstract: No abstract text available Text: SCH2309 注文コード No. N A 0 8 7 6 三洋半導体データシート N SCH2309 P チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス特長・4V 駆動。・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。	Original	PDF	SCH2309 900mm2 100mA 100mA, IT11217 900mm2 IT12739 --800mA --10V IT11215
Untitled Abstract: No abstract text available Text: 3HP04S Ordering number : ENA0877 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04S General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage	Original	PDF	3HP04S ENA0877 A0877-4/4
IT11215 Abstract: No abstract text available Text: MCH6651 注文コード No. N A 0 8 7 5 三洋半導体データシート N MCH6651 P チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス特長・4V 駆動。・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。	Original	PDF	MCH6651 900mm2 100mA 100mA, --200mA IT11217 900mm2 IT12738 IT12751 IT11215
IT11215 Abstract: No abstract text available Text: MCH6651 Ordering number : ENA0875 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6651 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.	Original	PDF	MCH6651 ENA0875 900mm20 A0875-4/4 IT11215
Untitled Abstract: No abstract text available Text: 3HP04MH Ordering number : ENA0445 P-Channel Silicon MOSFET 3HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS	Original	PDF	ENA0445 3HP04MH 900mm2 A0445-4/4