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    2SJ630

    Abstract: A048
    Text: 2SJ630 注文コード No. N A 0 4 8 9 三洋半導体データシート N 2SJ630 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・1.8V 駆動。


    Original     		2SJ630 600mm2 IT11397 IT11398 A0489-3/4 IT11399 IT11400 2SJ630 A048 PDF

    2SJ630

    Abstract: marking MD
    Text: 2SJ630 Ordering number : ENA0489 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ630 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		2SJ630 ENA0489 600mm2 A0489-4/4 2SJ630 marking MD PDF