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Catalog Datasheet	MFG & Type	PDF	Document Tags
3LP04MH Abstract: No abstract text available Text: 3LP04MH Ordering number : ENA0551 P-Channel Silicon MOSFET 3LP04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS	Original	PDF	3LP04MH ENA0551 900mm2 A0551-4/4 3LP04MH
a1216 transistor Abstract: a1216 marking xa Text: MCH6649 Ordering number : ENA1216 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6649 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.	Original	PDF	MCH6649 ENA1216 PW10s, 900mm A1216-4/4 a1216 transistor a1216 marking xa
a12124 Abstract: 3lp04ch Text: 3LP04CH Ordering number : ENA1212 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage	Original	PDF	3LP04CH ENA1212 PW10s, 900mm20 A1212-4/4 a12124 3lp04ch
3lp04ss Abstract: A12144 Text: 3LP04SS Ordering number : ENA1214 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP04SS General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter	Original	PDF	3LP04SS ENA1214 PW10s, 145mm80mm1 A1214-4/4 3lp04ss A12144
A1216 Abstract: MOS12 Text: MCH6649 注文コード No. N A 1 2 1 6 三洋半導体データシート N MCH6649 P チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス特長・1.5V 駆動。・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。	Original	PDF	MCH6649 900mm2 100mA 100mA, --800mA PW10s --200mA IT11706 900mm2 A1216 MOS12
a1217 Abstract: No abstract text available Text: SCH2308 Ordering number : ENA1217 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2308 General-Purpose Switching Device Applications Features • • • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.	Original	PDF	SCH2308 ENA1217 PW10s, 900mm A1217-4/4 a1217
transistor A1215 Abstract: a1215 transistors A1215 a1215 DIODE Text: EC4309C Ordering number : ENA1215 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4309C General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C	Original	PDF	EC4309C ENA1215 PW10s, 145mm80mm1 A1215-4/4 transistor A1215 a1215 transistors A1215 a1215 DIODE
3LP04S Abstract: A12134 Text: 3LP04S Ordering number : ENA1213 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP04S General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage	Original	PDF	3LP04S ENA1213 PW10s, 145mm80mm1 A1213-4/4 3LP04S A12134
A1217 Abstract: A12172 IT11698 IT11702 Text: SCH2308 注文コード No. N A 1 2 1 7 三洋半導体データシート N SCH2308 P チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス特長・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。	Original	PDF	SCH2308 900mm2 100mA 100mA, --800mA --200mA PW10s IT11706 900mm2 A1217 A12172 IT11698 IT11702