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    Untitled

    Abstract: No abstract text available
    Text: 3LN04CH Ordering number : ENA1193 N-Channel Silicon MOSFET 3LN04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current DC


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    PDF 3LN04CH ENA1193 900mm2â 3LN04CH/D

    3LN04MH

    Abstract: sy 360 diode
    Text: 3LN04MH Ordering number : ENA0550 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings


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    PDF 3LN04MH ENA0550 900mm2 A0550-4/4 3LN04MH sy 360 diode

    A1193

    Abstract: 3ln04ch marking la IT1171
    Text: 3LN04CH Ordering number : ENA1193 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage


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    PDF 3LN04CH ENA1193 PW10s, 900mm20 A1193-4/4 A1193 3ln04ch marking la IT1171

    Untitled

    Abstract: No abstract text available
    Text: SCH2408 Ordering number : ENA1198 N-Channel Silicon MOSFET SCH2408 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF SCH2408 ENA1198 900mm2â SCH2408/D

    a1194

    Abstract: MOSFET IGSS 100A 3LN04S
    Text: 3LN04S Ordering number : ENA1194 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN04S General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage


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    PDF 3LN04S ENA1194 PW10s, 145mm80mm1 A1194-4/4 a1194 MOSFET IGSS 100A 3LN04S

    A1196

    Abstract: 3LN04SS 3ln04
    Text: 3LN04SS Ordering number : ENA1196 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN04SS General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter


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    PDF 3LN04SS ENA1196 PW10s, 145mm80mm1 A1196-4/4 A1196 3LN04SS 3ln04

    A1195

    Abstract: No abstract text available
    Text: MCH6650 注文コード No. N A 1 1 9 5 三洋半導体データシート N MCH6650 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


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    PDF MCH6650 900mm2 200mA 200mA, 100mA, IT11717 900mm2 IT13627 A1195

    a1198

    Abstract: 7028 NS A1198
    Text: SCH2408 Ordering number : ENA1198 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SCH2408 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


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    PDF SCH2408 ENA1198 PW10s, 900mm20 A1198-4/4 a1198 7028 NS A1198

    mosfet xb

    Abstract: No abstract text available
    Text: MCH6650 Ordering number : ENA1195 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6650 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


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    PDF MCH6650 ENA1195 PW10s, 900mm20 A1195-4/4 mosfet xb

    A1198

    Abstract: IT1171 NS A1198 IT11710
    Text: SCH2408 注文コード No. N A 1 1 9 8 三洋半導体データシート N SCH2408 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


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    PDF SCH2408 900mm2 200mA 200mA, 100mA, IT11717 PW10s 900mm2 IT13629 A1198 IT1171 NS A1198 IT11710

    Untitled

    Abstract: No abstract text available
    Text: EC4409C Ordering number : ENA1197 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4409C General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF EC4409C ENA1197 PW10s, 145mm80mm1 A1197-4/4

    A1196

    Abstract: IT1171 3LN04SS IT11710
    Text: 3LN04SS 注文コード No. N A 1 1 9 6 三洋半導体データシート N 3LN04SS N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・ハロゲンフリー対応。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


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    PDF 3LN04SS 145mm 200mA 200mA, 100mA, IT11716 350mA 145mm A1196 IT1171 3LN04SS IT11710