Untitled
Abstract: No abstract text available
Text: IT138/71 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)55 V(BR)CBO (V)55 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100p @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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IT138/71
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Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT138 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-78 PNP SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING:
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IT138
X10-4
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT138-TO71 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-71 PNP SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING:
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IT138-TO71
X10-4
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT138/71 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-71 PNP SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING:
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IT138/71
X10-4
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT138 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-78 NPN SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING:
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IT138
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Untitled
Abstract: No abstract text available
Text: ECH8663R Ordering number : ENA1184 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.
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ECH8663R
ENA1184
A1184-4/4
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A1177
Abstract: IT13811 EFC4606 TI 7059 marking G2 A11776
Text: EFC4606 Ordering number : ENA1177 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4606 General-Purpose Switching Device Applications Features • • • 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Specifications
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EFC4606
ENA1177
PW100s,
5000mm20
15ormation
A1177-6/6
A1177
IT13811
EFC4606
TI 7059
marking G2
A11776
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Abstract: No abstract text available
Text: ECH8663R Ordering number : ENA1184 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.
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ECH8663R
ENA1184
PW10s,
900mm20
A1184-4/4
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A1266
Abstract: transistor a1266 a1266 transistor A-1266
Text: EC4H08C Ordering number : ENA1266 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC4H08C UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • High cut-off frequency : fT=24GHz typ VCE=3V . Low operating voltage.
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ENA1266
EC4H08C
24GHz
S21e2
A1266-3/3
A1266
transistor a1266
a1266 transistor
A-1266
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A1259
Abstract: No abstract text available
Text: ECH8662 注文コード No. N A 1 2 5 9 三洋半導体データシート N ECH8662 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・2.5V 駆動。 ・ハロゲンフリー対応。
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ECH8662
900mm2
IT13833
PW10s
900mm2
IT13834
IT13835
A1259
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A1262
Abstract: No abstract text available
Text: EFC4601R Ordering number : ENA1262A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4601R General-Purpose Switching Device Applications Features • • • 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Specifications
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ENA1262A
EFC4601R
PW10s,
5000mm20
A1262-6/6
A1262
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Untitled
Abstract: No abstract text available
Text: ECH8664R Ordering number : ENA1185A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor
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ECH8664R
ENA1185A
A1185-7/7
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Text: ECH8601M Ordering number : EN1174A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8601M General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor
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ECH8601M
EN1174A
A1174-7/7
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A1268
Abstract: A1268 transistor
Text: MCH4013 Ordering number : ENA1268A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4013 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • High cut-off frequency : fT=22.5GHz typ VCE=3V Low operating voltage
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MCH4013
ENA1268A
150When
A1268-6/6
A1268
A1268 transistor
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1185A ECH8664R N-Channel Power MOSFET http://onsemi.com 30V, 7A, 23.5mΩ, Dual ECH8 Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor Best suited for LiB charging and discharging switch
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ENA1185A
ECH8664R
900mm2Ã
A1185-7/7
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Untitled
Abstract: No abstract text available
Text: MCH6421 Ordering number : ENA1264 SANYO Semiconductors DATA SHEET MCH6421 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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MCH6421
ENA1264
1200mm2â
A1264-4/4
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Untitled
Abstract: No abstract text available
Text: ECH8601M Ordering number : ENA1174 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8601M General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.
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ECH8601M
ENA1174
A1174-4/4
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A11745
Abstract: ECH8601M 4a4035
Text: ECH8601M Ordering number : EN1174A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8601M General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor
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EN1174A
ECH8601M
PW10s,
1000mm2
A1174-7/7
A11745
ECH8601M
4a4035
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Untitled
Abstract: No abstract text available
Text: / T L i n e A LT1381 ß TECHNOLOGY Low Power 5V RS232 Dual Driver/Receiver with 0.1 jxF Capacitors Fcm uncs D C SC R IPTIO n • ESD Protection over ±10kV ■ Low Cost ■ Uses Small Capacitors: 0.1 |iF ■ CMOS Comparable Low Power: 40mW ■ Operates from a Single 5V Supply
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LT1381
RS232
LT1381
RS232
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IT136
Abstract: IT137 IT138 IT139 T071 IT137/W
Text: KÜ^DIL IT136-IT139 Dual Monolithic PHP Transistor FEATU RES • High Gain at Low Current - h p ^ > 200 PIN CONFIGURATION 1mA • Low O utput Capacitance — CQj30 < 3 pF • Tight I B Match - I B i • Tight V BE Tracking - A V (3E i - V B E 2 * • - 5 5 ° C to + 125°C
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IT136-IT139
IT136
IT137
IT138
IT139
IT136
IT137
IT138
IT139
T071
IT137/W
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it139
Abstract: No abstract text available
Text: IT136 —IT139 CALOGIC CORP MAE D 164432B Monolithic Dual PNP General Purpose Amplifier fi M C G Q caloric CORPORATION v 'T W -T .l IT136-IT139 A B S O LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • • 0Q003bS High Gain at Low Current
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IT136
--IT139
164432B
0Q003bS
IT136-IT139
IT136,
IT137
IT138
IT139
IT139)
it139
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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lc1f
Abstract: IT136 IT137 IT138 IT139
Text: SOLID ÏÏÏ STATE IT 1 3 6 -IT 1 3 9 E D ÌT |3fl7£0fll □□11D34 a I IT136-IT139 SetSMIIIIYJI II l r = . l l ^ § > Monolithic Dual PNP General Purpose Amplifier r* FEATURES ABSOLUTE MAXIMUM RATINGS • High G ain at Low Current • Low Output C apacitance
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11D34
IT136-IT139
IT136
IT136-T071
IT137
IT137-T071
IT138
IT138-T071
IT139
IT139-T071
lc1f
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2N4044
Abstract: 2N4045 2N4100 2N4878 3N165 3N166 3N188 3N189 3N190 3N191
Text: 1. DISCRETES Differential Amplifiers — Dual Monolithic P-Channel MOSFETS Enhancement Ordering Information Preferred P irt Number V osi th) min/max V Package BVd s s min/max ta s s max •g s s max V PA PA Vg S 1-2 max r C)S(on) max !) talon) min/max mA
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3N165
T0-99
3N166
3N188
3N189
3N190
2N4044
2N4045
2N4100
2N4878
3N191
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