Untitled
Abstract: No abstract text available
Text: EMH2308 Ordering number : ENA1445 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH2308 General-Purpose Switching Device Applications Features • • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,
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Original
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ENA1445
EMH2308
EMH2308
PW10s,
900mm2
A1445-4/4
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PDF
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EMH2308
Abstract: No abstract text available
Text: EMH2308 Ordering number : ENA1445 SANYO Semiconductors DATA SHEET EMH2308 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,
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Original
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EMH2308
ENA1445
EMH2308
PW10s,
900mm2
A1445-4/4
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PDF
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Untitled
Abstract: No abstract text available
Text: EMH2801 Ordering number : ENA1821 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode EMH2801 General-Purpose Switching Device Applications Features • • • • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
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Original
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ENA1821
EMH2801
A1821-5/5
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PDF
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Untitled
Abstract: No abstract text available
Text: EMH2801 注文コード No. N A 1 8 2 1 三洋半導体データシート N MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード EMH2801 汎用スイッチングデバイス 特長 ・ P チャネル MOS 型電界効果トランジスタとショットキバリアダイオードを 1 パッケージに内蔵した複合タイプ
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Original
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EMH2801
900mm
IT12192
IT12194
IT12195
A1821-4/5
IT13213
IT13214
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PDF
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Untitled
Abstract: No abstract text available
Text: EMH2308 Ordering number : ENA1445A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH2308 General-Purpose Switching Device Applications Features • • • • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,
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Original
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EMH2308
ENA1445A
EMH2308
A1445-7/7
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PDF
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Untitled
Abstract: No abstract text available
Text: EMH2308 Ordering number : ENA1445A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH2308 General-Purpose Switching Device Applications Features • • • • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,
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Original
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ENA1445A
EMH2308
EMH2308
PW10s,
900mm2
A1445-7/7
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PDF
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it134
Abstract: No abstract text available
Text: EMH2604 Ordering number : EN9006A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2604 General-Purpose Switching Device Applications Features • • • • Nch + Pch MOSFET ON-resistance Nch : RDS on 1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.)
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Original
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EN9006A
EMH2604
PW10s,
900mm2
it134
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PDF
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Untitled
Abstract: No abstract text available
Text: EMH2801 Ordering number : ENA1821 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode EMH2801 General-Purpose Switching Device Applications Features • • • • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
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Original
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EMH2801
ENA1821
A1821-5/5
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN9006A EMH2604 Power MOSFET http://onsemi.com 20V, 4A, 45mΩ, –20V, –3A, 85mΩ, Complementary Dual EMH8 Features • • • • Nch + Pch MOSFET ON-resistance Nch : RDS on 1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.) 1.8V drive Halogen free compliance
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EN9006A
EMH2604
PW10s,
900mm2
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PDF
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Untitled
Abstract: No abstract text available
Text: EMH2801 Ordering number : ENA1821A SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode EMH2801 General-Purpose Switching Device Applications Features • • • • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
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Original
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EMH2801
ENA1821A
A1821-8/8
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PDF
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EN9006
Abstract: No abstract text available
Text: EMH2604 Ordering number : EN9006 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2604 General-Purpose Switching Device Applications Features • • • • Nch + Pch MOSFET ON-resistance Nch : RDS on 1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.)
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EN9006
EMH2604
PW10s,
900mm2
EN9006
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PDF
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A1445-3
Abstract: EMH2308
Text: EMH2308 注文コード No. N A 1 4 4 5 三洋半導体データシート N EMH2308 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 低オン抵抗超高速スイッチングの P チャネル MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した
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EMH2308
900mm
900mm2
IT14541
PW10s
900mm2
IT14542
IT14543
A1445-3
EMH2308
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1445A EMH2308 P-Channel Power MOSFET http://onsemi.com –20V, –3A, 85mΩ, Dual EMH8 Features • • • • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting
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Original
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ENA1445A
EMH2308
EMH2308
900mm2Ã
A1445-7/7
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PDF
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Untitled
Abstract: No abstract text available
Text: EMH2604 Ordering number : EN9006A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2604 General-Purpose Switching Device Applications Features • • • • Nch + Pch MOSFET ON-resistance Nch : RDS on 1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.)
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Original
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EMH2604
EN9006A
900mm2Ã
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1445A EMH2308 P-Channel Power MOSFET http://onsemi.com –20V, –3A, 85mΩ, Single EMH8 Features • • • • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting
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Original
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ENA1445A
EMH2308
EMH2308
PW10s,
900mm2
A1445-7/7
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1821A EMH2801 P-Channel Power MOSFET http://onsemi.com –20V, –3A, 85mΩ, Single EMH8 with Schottky Diode Features • • • • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
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Original
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ENA1821A
EMH2801
PW10s,
A1821-8/8
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PDF
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