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2SC1417 Abstract: d250m Text: Ordering number:ENN2006A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1417/2SC3647 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide highdensity, small-sized hybrid ICs.	Original	PDF	ENN2006A 2SA1417/2SC3647 2SA1417/2SC3647] 25max 2SA1417 2SC1417 d250m
2SA1417 Abstract: 2SC3647 ITR03542 Text: 2SA1417 / 2SC3647 注文コード No. N 2 0 0 6 C 三洋半導体データシート半導体ニューズ No.N2006B とさしかえてください。 2SA1417 / 2SC3647 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ高耐圧スイッチング用	Original	PDF	2SA1417 2SC3647 N2006B 2SA1417 250mm2 100mA 2SC3647 ITR03542
2SA1417 Abstract: 2SC3647 Text: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.	Original	PDF	2SA1417 2SC3647 EN2006C 2SA1417 2SC3647
2SC1417 Abstract: 2SC3647S-TD-E Text: 2SA1417 / 2SC3647 Ordering number : EN2006D SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity	Original	PDF	EN2006D 2SA1417 2SC3647 2SA1417/2SC3647 2SA1417 250mm2 2SC1417 2SC3647S-TD-E
Untitled Abstract: No abstract text available Text: 2SA1417 / 2SC3647 Ordering number : EN2006D SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity	Original	PDF	2SA1417 2SC3647 EN2006D 2SA1417/2SC3647 2SA1417
Untitled Abstract: No abstract text available Text: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.	Original	PDF	2SA1417 2SC3647 EN2006C 2SA1417
Untitled Abstract: No abstract text available Text: 2SA1417 / 2SC3647 Ordering number : EN2006C PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.	Original	PDF	2SA1417 2SC3647 EN2006C 2SA1417
Untitled Abstract: No abstract text available Text: Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs	Original	PDF	EN2006D 2SA1417/2SC3647 2SA1417 250mm2
Untitled Abstract: No abstract text available Text: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.	Original	PDF	2SA1417 2SC3647 EN2006C 2SA1417