2SC3649
Abstract: 2SA1419
Text: 2SA1419 / 2SC3649 注文コード No. N 2 0 0 7 B 三洋半導体データシート 半導体ニューズ No.N2007A をさしかえてください。 2SA1419 / 2SC3649 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチング用
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2SA1419
2SC3649
N2007A
2SA1419
250mm2
100mA
2SC3649
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Untitled
Abstract: No abstract text available
Text: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.
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2SA1419
2SC3649
EN2007B
2SA1419
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
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EN2007C
2SA1419/2SC3649
2SA1419
250mm2
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Untitled
Abstract: No abstract text available
Text: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity
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2SA1419
2SC3649
EN2007C
2SA1419/2SC3649
2SA1419
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Untitled
Abstract: No abstract text available
Text: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.
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EN2007B
2SA1419
2SC3649
2SA1419
250mm20
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2SC3649
Abstract: ITR03571 ITR03572 2SA1419
Text: Ordering number:ENN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide highdensity hybrid ICs.
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ENN2007A
2SA1419/2SC3649
2SA1419/2SC3649]
25max
2SA1419
2SC3649
ITR03571
ITR03572
2SA1419
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2SC3649
Abstract: 2SA1419 ITR03571 2SA141
Text: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.
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2SA1419
2SC3649
EN2007B
2SA1419
2SC3649
ITR03571
2SA141
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Untitled
Abstract: No abstract text available
Text: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity
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2SA1419
2SC3649
EN2007C
2SA1419/2SC3649
2SA1419
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