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Catalog Datasheet	MFG & Type	Document Tags	PDF
C4614 Abstract: No abstract text available Text: Ordering number : EN3578A 2SA1770/2SC4614 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Specifications Absolute Maximum Ratings at Ta=25°C	Original	EN3578A 2SA1770/2SC4614 2SA1770 C4614	PDF
2SA2168 Abstract: 2SA21 ITR04571 ITR04573 Text: 2SA2168 Ordering number : ENN8357 2SA2168 PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • Adoption of MBIT process. High breakdown voltage and large current capacity. Specifications Absolute Maximum Ratings at Ta=25°C	Original	2SA2168 ENN8357 2SA2168 2SA21 ITR04571 ITR04573	PDF
2SC4614 Abstract: 2SA1770 2sa1770 equivalent ITR04571 ITR04572 ITR04573 ITR04574 Text: 注文コード No. N 3 5 7 8 2SA1770/2SC4614 No. N3578 12500 2SA1770 / 2SC4614 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ高耐圧スイッチング用・MBIT プロセス採用。・高耐圧で電流容量が大きい。	Original	2SA1770/2SC4614 N3578 2SA1770 2SC4614 2SA1770 100mA 500mA, ITR04584 2SC4614 2sa1770 equivalent ITR04571 ITR04572 ITR04573 ITR04574	PDF
2SA2168 Abstract: ITR04573 ITR04571 Text: 2SA2168 注文コード No. N 8 3 5 7 2SA2168 PNP エピタキシァルプレーナ型シリコントランジスタ高耐圧スイッチング用特長・MBIT プロセス採用。・高耐圧で電流容量が大きい。絶対最大定格 Absolute Maximum Ratings / Ta=25℃	Original	2SA2168 100mA 500mA, IT09694 IT09695 IT09692 IT09696 IT09697 2SA2168 ITR04573 ITR04571	PDF
Untitled Abstract: No abstract text available Text: Ordering number:ENN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage and large current capacity. unit:mm 2064A [2SA1770/2SC4614]	Original	ENN3578 2SA1770/2SC4614 2SA1770/2SC4614] 2SA1770	PDF
2SC4614 Abstract: 2sa1770 equivalent 2SA1770 ITR04571 ITR04572 Text: Ordering number:ENN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage and large current capacity. unit:mm 2064A [2SA1770/2SC4614]	Original	ENN3578 2SA1770/2SC4614 2SA1770/2SC4614] 2SA1770 2SC4614 2sa1770 equivalent 2SA1770 ITR04571 ITR04572	PDF
Untitled Abstract: No abstract text available Text: Ordering number:ENN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage and large current capacity. unit:mm 2064A [2SA1770/2SC4614]	Original	ENN3578 2SA1770/2SC4614 2SA1770/2SC4614] 2SA1770	PDF
Untitled Abstract: No abstract text available Text: 2SA1770 / 2SC4614 Ordering number : EN3578A SANYO Semiconductors DATA SHEET 2SA1770 / 2SC4614 PNP/NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • Adoption of MBIT process High breakdown voltage and large current capacity	Original	2SA1770 2SC4614 EN3578A 2SA1770	PDF