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    ITT TAA CAPACITORS Search Results

    ITT TAA CAPACITORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    ITT TAA CAPACITORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GM71C4400BJ

    Abstract: GM71C4400 gm71c4400b
    Text: @ LG Semicon. Co. LTD Description Features The GMM781100BNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package. The GMM781100BNS is a socket type memory module, suitable for easy change or addition


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    PDF GMM781100BNS GM71C4400BJ, GMM781100BNS GM71C4400B GMM7811OOBNS-60 GMM781100BNS-70 GMM781100BNS-80 88888888fo GM71C4400BJ GM71C4400

    itt taa capacitors

    Abstract: No abstract text available
    Text: • ■ M » ■ i n V IDT7MP4120 1 M x 32 C M 0S STATIC RAM MODULE T FEATURES DESCRIPTION • High-density 4MB Static RAM module • Low profile 72-pin ZIP Zig-zag In-line vertical Package or 72-pin SIMM (Single In-line Memory Module) • Fast access time: 15ns (max.)


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    PDF IDT7MP4120 72-pin IDT7MP4120 itt taa capacitors

    MC-424000A8FA-60

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-424000A8 SERIES 4M-WORD BY 8-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A8 is a 4 194 304 w ords by 8 bits dynamic RAM m odule on which 8 pieces o f 4M DRAM </iPD424100 are assembled. This m odule provides high density and large quantities o f m em ory in a small space w ith o u t utilizing the


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    PDF MC-424000A8 uPD424100 MC-424QQQA8-60 MC-424000A8-70 MC-424000A8-80 MC-424000A8-10 MC-424000A8BA, 424000A8FA MC-424000A8FA-60

    Untitled

    Abstract: No abstract text available
    Text: 256K x 32 CMOS STATIC RAM MODULE IDT7MP4045 IDT7MP4145 Integrated D evice Technology, Inc. DESCRIPTION: • High density 1 m egabyte static RAM module IDT7M P4145 upgradeable to 4 megabyte, IDT7MP4120 • Low profile 64 pin ZIP (Zig-zag In-line vertical Package)


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    PDF IDT7MP4045 IDT7MP4145 P4145 IDT7MP4120) P4045 P4145 IDT7MP4045/4145 QQ21233 IDT7MP4045/7MP4145 7MP4145

    Untitled

    Abstract: No abstract text available
    Text: LIE D • bEMTf l SS 0 0 2 D5 MS 3 m M MITSUBISHI H 2 M ■ M IT I 3 2 E J MITSUBISHI LSIs , S E J - 6 , - 7 , - 8 , - 1 PI Ef lORY/ASI C FAST PAGE MODE 2097152-WORD BY 32-BIT DYNAMIC RAM DESCRIPTION The M H 2M 32E J, SEJ is 2 0 9 7 1 5 2 w ord x 3 2 b it dynamic


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    PDF 2097152-WORD 32-BIT

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 QG15431 Ô4S KM41C1001C CM OS DRAM 1 M x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1001C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


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    PDF QG15431 KM41C1001C KM41C1001C 576x1 KM41C1001C-6 110ns KM41C1001C-7 130ns KM41C1001C-8 150ns

    D-85540

    Abstract: HM5116400ATS
    Text: HB56T432D Series 4,194,304-Word x 32-Bit High Density Dynamic RAM Module HITACHI The HB56T432D is a 4M x 32 dynamic R A M Small Outline D IM M S .O .D IM M , mounted 8 pieces of 16-Mbit D R A M (HM5116400ATS) sealed in TSOP package. An outline of the HB56T432D is 72-pin Zig Zag


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    PDF HB56T432D 304-Word 32-Bit 16-Mbit HM5116400ATS) 72-pin D-85540 HM5116400ATS

    Untitled

    Abstract: No abstract text available
    Text: HB56TW432D Series 4,194,304-Word x 32-Bit High Density Dynamic RAM Module HITACHI The HB56TW432D is a 4M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16-Mbit DRAM (HM51W16400ATS) sealed in TSOP package. An outline of the HB56TW432D is 72-pin Zig Zag


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    PDF HB56TW432D 304-Word 32-Bit 16-Mbit HM51W16400ATS) 72-pin

    Untitled

    Abstract: No abstract text available
    Text: 1 Megabit CMOS SRAM PENSE-PAC MICROSYSTEMS DPS3232V D E SC R IP TIO N : The D PS3232V is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 SRAM devices in ceramic L C C packages surface mounted on a co-fired ceramic substratewith matching thermal coefficients. The LCCs


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    PDF DPS3232V 66-pin 128Kx32 256Kx32, 30A014-10 DD0121fl

    SH 6770

    Abstract: MC-428000A36 1J250
    Text: N E C ELECTRONICS INC b lE ]> • b4S7SES 0G34434 NEC Electronics Inc. Description Pin Configuration The MC-428000A36 is a fast-page dynamic RAM mod­ ule organized as 8,388,608 words by 36 bits and de­ signed to operate from a single +5-volt power supply.


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    PDF 0G34434 MC-428000A36 36-Bit b4B7S25 003444b MC-428000A36 0428000A36BH 1J250 IPD4217400LE SH 6770 1J250

    SIMM 30-pin

    Abstract: TM497GU8 30-pin simm memory TMS417400 TMS417400DJ
    Text: TM497GU8 4194394-WORD BY 8-BIT DYNAMIC RAM MODULE S M M S498-A PR IL 1994 Organization . . . 4194304 x 8 U SINGLE-IN-LINE PACKAGE TOP VIEW Single 5-V Power Supply (±10% Tolerance) 30-Pin Single-In-Line Memory Module (SIMM) for Use With Sockets VCC CAS DQ1


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    PDF TM497GU8 4194394-WORD SMMS498-APRIL 30-Pin 16-Megabit 497GU8-60 497GU8-70 497GU8-80 R-PSIP-N30 SIMM 30-pin 30-pin simm memory TMS417400 TMS417400DJ

    Intronic

    Abstract: No abstract text available
    Text: HB56TW132D-6BL/7BL/8BL 1,048,576-Word X 32-Bit High Density Dynamic RAM Module HITACHI The HB56TW 132D is a 1M x 32 dynamic RAM Sm all O utline D IM M S.O .D IM M , mounted 8 p ieces o f 4-M b it DR AM (H M 51W 4400B LTT ) sealed in TSOP package. An outline of the HB56TW132D is 72-pin Zig Zag


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    PDF HB56TW132D-6BL/7BL/8BL 576-Word 32-Bit HB56TW 4400B HB56TW132D 72-pin 72-pin) Intronic

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    Untitled

    Abstract: No abstract text available
    Text: m i X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Time • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms


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    PDF X2816C 640ms 300us G0D457Ã 120ns 150ns 200ns

    Untitled

    Abstract: No abstract text available
    Text: Prelim inary HB56D236BW/SBW-6B/7B/8B 2,097,152-Word x 36-Bit High D ensity D ynam ic RAM M odule Rev.O Dec.20. 1993 HITACHI The IIB 5 6 D 2 3 6 is a 2M X 36 d yn am ic R A M module, mounted 16 pieces of 4 M b it D R A M H M 5 1 4 4 0 0 BS sealed in S O J package and 4


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    PDF HB56D236BW/SBW-6B/7B/8B 152-Word 36-Bit 72-pin HB56D23s 294/50/Klnkos/MFM M11T226

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    514400B

    Abstract: No abstract text available
    Text: Prelim inary H B 5 6 D 1 3 6B W /S B W -6B /7B /8B 1 ,0 4 8 ,5 7 6 -W o r d x 3 6 -B it H ig h D e n s ity D y n a m ic R A M M o d u le Rev.O Dec.20 .19 93 HITACHI T h e H B 56D 136 is a 1M X 36 d y n a m ic RAM m odule, m ounted 8 pieces of 4M bit DRAM H M 514400B S sealed in SO J package and 2


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    PDF 514400B HM512200BS IB56D13G 72-pin HB56D136 294/50/Kinkos/MFM M11T227

    Untitled

    Abstract: No abstract text available
    Text: >pec. MITSUBISHI LSIs Specifications subject to • ■ ■ ■ _» m mi m ■ m m m m a MH16V7245AWJ -5, -6 _ HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH16V7245AWJ is 16777216-word x 72-bit dynamic


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    PDF MH16V7245AWJ 16777216-word 72-bit MIT-DS-0099-0 26/Feb y1997 26/Feb

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 16M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V1620GS-50/-60 HYM 72V1630GS-50/-60 Preliminary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16 M x 72 organisation • Optimized for ECC applications


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    PDF 72-Bit 72V1620GS-50/-60 72V1630GS-50/-60 fl23Sb05 72V1620/30GS-50/-60 72-ECC 0235b05 fl23SbOS

    ETR1 TIMERS

    Abstract: OTI-037 taa 765a 765A LC43 8253 programme able interface ic 4060 pin diagram OTI-032 mark 1AM oti037
    Text: OAK TECHNOLOGY INC. OTI-033 IBM PS/2 MODEL 30-COMPATIBLE FLOPPY DISK CONTROLLER AND DATA SEPARATOR FEATURES • Provides a 765A-com patible floppy disk controller • Contains a precision analog data separator • Integrates an internal phase com para­


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    PDF QTI-033 30-COMPATIBLE 65A-compatible -250K -300K -500K OTl-033 OTI-O31 OTI-032 ETR1 TIMERS OTI-037 taa 765a 765A LC43 8253 programme able interface ic 4060 pin diagram mark 1AM oti037

    Hall Siemens

    Abstract: HYB51471B MARKING AOH
    Text: H Ÿ B b141 fiu J /H Ü L - 5 0 fM i ü /i - /U r 2 5 6 k x i 6 - s i t D y n a m ic R A M i M r ñ n n y i a • M r u n i v i M M Ö K X 1Ö B T I t w i u t t i â k i l u i M m n U Y N A iy ïlU u a t c i n |V !t!V !U h |t5 Íy H u n Vp wr w< ■ h■9r i■n


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    PDF 514171BJ/BJL 256kx16 256kx HYB51471B 5t4171BJ/BJL CDAC19400-H/Ag Hall Siemens MARKING AOH

    Untitled

    Abstract: No abstract text available
    Text: HB56SW872ES-6/7 8,388,608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-765A Z Rev. 1.0 Apr. 4, 1997 Description The HB56SW872ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The


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    PDF HB56SW872ES-6/7 608-word 72-bit ADE-203-765A HB56SW872ES HB56SW 872ES 16-Mbit HM51W16405) 16-bit

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


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    PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541

    Untitled

    Abstract: No abstract text available
    Text: XRD9815 3-Channel 12-Bit Linear CCD & CIS Sensor Signal Processors September 1999-3 FEATURES • Internal Voltage Reference Triple-Channel, 4 Mega Pixels Per Second CCD Color Scan Mode • 5V Operation and 3V I/O Compatibility • Low Power CMOS: 500mW @ 5V


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    PDF XRD9815 12-Bit 500mW 32-Pin 3422L1S 3425blà 001417S