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IXYS Corporation IXDH30N120 IGBT 1200V 60A 300W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXDH30N120	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IXDH30N120		41		1	1 - 10 - 100 $18.01 1000 $18.01 10000 $18.01	Buy Now
IXYS Corporation IXDH30N120D1 IGBT 1200V 60A 300W TO247AD
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DigiKey	IXDH30N120D1	Tube			30	1 - 10 - 100 $7.00933 1000 $7.00933 10000 $7.00933	Buy Now
Bristol Electronics	IXDH30N120D1		10			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXDH 30N120
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IXDH 30N120		10			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Integrated Circuits Division IXDH30N120 IGBT DIS.SINGLE 38A 1200V H.VOLTAGE TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXDH30N120		51			1 $14.46843 10 $14.46843 100 $13.5219 1000 $13.5219 10000 $13.5219	Buy Now
IXYS Integrated Circuits Division IXDH30N120D1 IGBT DIS.DIODE SINGLE 38A 1200V H.VOLTAGE TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXDH30N120D1					1 $10.55252 10 $10.55252 100 $9.5932 1000 $9.5932 10000 $9.5932	Get Quote

IXDH30N120 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXDH30N120		IXYS	1200V high voltage IGBT with optional diode		Original	PDF
IXDH30N120D1		IXYS	1200V high voltage IGBT with optional diode		Original	PDF

IXDH30N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	PDF	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
30n120 Abstract: 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600 Text: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V C G TO-247 AD (IXDH) G E E IXDH 30N120 IXDT 30N120 G C IXDH 30N120 D1 IXDT 30N120 D1	Original	PDF	30N120 30N120 O-247 O--268 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600
diode B4 Abstract: ixdn75n120 STO-227 IGBT D-Series 20n60 IXDH20N120AU1 20N60B 30N120 55N120 30N120D1 Text: SCSOA NPT IGBT D-Series Contents IGBT VCES IC max VCE sat TO-263 max TO-247 TC = 25°C TC = 25°C V A V 600 32 60 2.8 2.7 ➤ IXDP 20N60 B ➤ IXDP 35N60 B 34 38 60 100 150 3.4 3.0 2.9 2.8 2.7 IXDA 20N120 AS 1200 TO-268 STO-227 Page TO-220 B4 - 2 B4 - 4 ➤ IXDH 35N60 B	Original	PDF	O-263 O-247 O-268 STO-227 O-220 20N60 35N60 20N120 20N120 diode B4 ixdn75n120 STO-227 IGBT D-Series IXDH20N120AU1 20N60B 30N120 55N120 30N120D1
30N120D1 Abstract: 30n120d 30N120 T30N120 ixdh 30n120d1 Text: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G G E Preliminary Data VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V E IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1	Original	PDF	30N120 30N120 IXDH30N120 D-68623 30N120D1 30n120d T30N120 ixdh 30n120d1
SGH80N60RUFD Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120 Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild ()	Original	PDF	SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
IXDH30N120 Abstract: 30N120 IXDH30N120D1 30N120D1 30n12 Text: IXDH 30N120 IXDH 30N120 D1 VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G G E Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ VGES VGEM Continuous	Original	PDF	30N120 30N120 IXDH30N120 IXDH30N120 IXDH30N120D1 30N120D1 30n12
Untitled Abstract: No abstract text available Text: IXDH 30N120 IXDH 30N120 D1 VCES = 1200 V IC25 = 60 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode C C G G E Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ VGES VGEM Continuous Transient IC25 IC90 ICM TC = 25°C	Original	PDF	30N120 30N120 IXDH30N120
35N60 Abstract: 30N120 75N120 ixys ixdn 75 n 120 20n60 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n Text: Discrete NPT IGBTs Contents NPT IGBT VCES IC max VCE sat TO-263 (.AS) typ. TC = 25°C TC = 25°C V A V 600 32 60 2.2 2.1 IXDP 20N60 B IXDP 35N60 B 34 38 50 60 100 150 2.8 2.4 2.4 2.4 2.3 2.2 IXDA 20N120 AS 1200 TO-247 TO-268 Page STO-227 ISOPLUS 247TM TO-220	Original	PDF	O-263 O-247 20N60 35N60 STO-227 O-268 247TM O-220 20N120 30N120 75N120 ixys ixdn 75 n 120 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	PDF	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
30N120 Abstract: 30n120d Text: □IXYS IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcGR Tj = 25°C to 150°C; RGE= 20 k£l	OCR Scan	PDF	30N120 30N120 IXDT30N120 O-247 D-68623 30n120d
T0247AC Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m	OCR Scan	PDF	B03M0WH0CTb npe06pa30Baiennx paUP212 T0220AB BUP213 BUP313 T0218AB BUP313D T0247AC IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
IGBT 200A 1200V Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D	OCR Scan	PDF	bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Untitled Abstract: No abstract text available Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C u n o B b ie T p a H 3 M C T o p b i IG B T IX Y S C #epa npMMeHeHMa: b n po M biw ne rn-ib ix ycTaHOBKax M a n o fi m cpeflHeM m o w ,h o c tm , b npMBOAHbix CMCTeMax, b yd p o M C T B a x ynpaB ^eH M a, b 6 ecn p0B 0A H bix 6 no K ax riMTaHMA Arm	OCR Scan	PDF	3S88SSS588S8888gÂ