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    IXFH36N55Q2 Search Results

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    IXFH36N55Q2 Price and Stock

    IXYS Corporation IXFH36N55Q2

    MOSFET N-CH 550V 36A TO247AD
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    Mouser Electronics IXFH36N55Q2
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    IXFH36N55Q2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH36N55Q2 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF

    IXFH36N55Q2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH36N55Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr VDSS = 550 V ID25 = 36 A RDS on = 0.18 Ω trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFH36N55Q2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Data HiPerFETTM Power MOSFETs IXFH36N55Q2 VDSS = 550 V = 36 A ID25 RDS on = 0.16 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		IXFH36N55Q2 O-247 728B1 123B1 065B1 PDF

    IXFH36N55Q2

    Abstract: PF660
    Text: HiPerFETTM Power MOSFETs IXFH36N55Q2 VDSS = 550 V = 36 A ID25 RDS on = 0.18 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		IXFH36N55Q2 IXFH36N55Q2 PF660 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Data HiPerFETTM Power MOSFETs VDSS = 550 V ID25 = 36 A RDS on = 0.16 Ω IXFH36N55Q2 IXFK36N55Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFH36N55Q2 IXFK36N55Q2 O-247 O-264 728B1 PDF

    30NC60

    Abstract: IXFH36N55Q2 laser 850 nm
    Text: Advanced Technical Data HiPerFETTM Power MOSFETs IXFH36N55Q2 VDSS = 550 V = 36 A ID25 RDS on = 0.16 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		IXFH36N55Q2 728B1 123B1 728B1 065B1 30NC60 IXFH36N55Q2 laser 850 nm PDF

    IXFD21N100F-8F

    Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
    Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005


    Original     		IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50 PDF