Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerFETTM Power MOSFETs Q-Class IXFN 36N60Q VDSS ID25 RDS on Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D G Preliminary data sheet Symbol VDSS = 600 V = 36 A Ω = 165 mΩ S Test Conditions
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36N60Q
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 36N100 VDSS ID25 RDS on = 1000 V = 36 A = 0.24 W D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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36N100
100kHz
125OC
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ixfn 36 n 50
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 36N100 VDSS ID25 RDS on = 1000 V = 36 A = 0.24 W D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C
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36N100
100kHz
125OC
ixfn 36 n 50
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q trr ≤ 250 ns Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50
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44N50Q
48N50Q
44N50
48N50
OT-227
E153432
728B1
123B1
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123B16
Abstract: 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q
Text: HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 44 48 A A IDM
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44N50Q
48N50Q
44N50
48N50
OT-227
E153432
728B1
123B1
123B16
44N50
48N50
48N50Q
IXFN48N50Q
IXFN 48n50q
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36N60
Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)
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32N60
36N60
36N60
32N60
250ns
O-264
IXFN SOT227
fast diode SOT-227
D-68623
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Untitled
Abstract: No abstract text available
Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)
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32N60
36N60
36N60
32N60
250ns
O-264
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BT 1496
Abstract: wy 409
Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 36N100 S Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC= 25°C, Chip capability
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36N100
Figure10.
BT 1496
wy 409
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44N80
Abstract: 44N80P "SOT-227 B" dimensions
Text: PolarHVTM HiPerFET Power MOSFET IXFN 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous
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44N80P
44N80
44N80P
"SOT-227 B" dimensions
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125OC
Abstract: 98520C
Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 36N100 VDSS ID25 RDS on = 1000V = 36A Ω = 0.24Ω D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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36N100
OT-227
E153432
125OC
125OC
98520C
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S3 DIODE schottky
Abstract: 100N10S1
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)
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100N10S1
100N10S2
100N10S3
OT-227
E153432
S3 DIODE schottky
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFN 72N55Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions
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72N55Q2
OT-227
E153432
728B1
123B1
728B1
065B1
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR
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32N120
OT-227
E153432
728B1
123B1
728B1
065B1
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065B1
Abstract: ixfn36n100 fast diode SOT-227 "SOT-227 B" dimensions tc 144 e 125OC
Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 36N100 VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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36N100
OT-227
E153432
IXFN36N100
728B1
123B1
728B1
065B1
ixfn36n100
fast diode SOT-227
"SOT-227 B" dimensions
tc 144 e
125OC
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IXYS CS 30-12
Abstract: 36N100
Text: IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 36N100 1000 V 36 A 0.24 Q VDSS I D25 R DS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions v DSS
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36N100
to150
OT-227
IXYS CS 30-12
36N100
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Untitled
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFK / IXFN 32N60 IXFK / IXFN 36N60 V DSS ^D25 600 V 600 V 32 A 36 A D DS on 0.25 Q 0.18 Q N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK
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IXFK32N60
IXFN32N60
IXFK36N60
IXFN36N60
32N60
36N60
O-264
OT-227
E153432
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DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
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AXC-051
AXC-051-R
AXC-102
AXV-002
015-14to1
2x45-16io1
2x60-08io1
2x60-12io1
2x60-14io1
2x60-16io1
DSE 130 -06A
vub 70-12
IXGH 30n120
vub 70-16
30N60B
80N10
12N60CD
DSEI 30-16 AS
DSEP 15-06A
13N50
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52N30
Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70
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76N06-11
76N07-11
76N07-12
67N10
75N10
50N20
58N20
74N20
80N20
35N30
52N30
20n80
ixfh 60N60
IXFX 44N80
15n10
7n80
E51G
44N80
60n60
46N50
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C1218
Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268
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67N10
75N10
75N10Q
80N10Q
O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
C1218
C1222
ixfh 60N60
IXFX 44N80
C1138
C1238
20n80
C1228
C1172
IXFN 230N10 230N10
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36N60
Abstract: 32N60 D-68623 ld25 sot-223
Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data IXFK/FN 36N60 IXFK/FN 32N60 HiPerFET Power MOSFET D vv DSS ^D25 600V 600V 36A 32A DS on 0.18Q 0.25Q 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions
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32N60
32N60
36N60
36N60
250ns
D-68623
ld25 sot-223
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32n60
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFK/IXFN 32N60 IXFK/ IXFN 36N60 Test Conditions T j = 25° C to 150° C 600 600 V VDQR T j = 25° C to 150° C; RGS= 1 Mi2 600 600 V Vos Continuous ±20 120 V vGSM Transient ±30 ±30 V ^D25 T c = 25° C, Chip capability 32N60 36N60
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IXFK32N60
IXFN32N60
IXFK36N60
IXFN36N60
32N60
36N60
O-264
OT-227
E153432
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8n80
Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1
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CS1011
-18io1
CS1011-22io1
CS1011-25io1
CS1250-12io1
CS1250-14io1
CS1250-16io1
CS20-12
CS20-14
CS20-16
8n80
DS117-12A
36-18N
16go
20N60A
2QN60
62-16N07
DSA117-12
10N60A
MCC95-12io1B
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100N20
Abstract: t 227 fk90 ax2002 t227 106N20 IXFK90N20
Text: p V DSS HiPerFET Power MOSFETs ix f k 90 n 20 IXFN100 N 20 IXFN106N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t ^D25 200 V 90 A 100 A 200 V 200 V 106 A trr < 200 ns DS on 23 mû 23 mQ 20 m£2 TO -264 A A (IXFK) Sym bol Test C onditions
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IXFN100
IXFN106N20
90N20
100N20
106N20
T-227
90N20
IXFN100N20
106N20
t 227
fk90
ax2002
t227
IXFK90N20
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mosfet 4400
Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,
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100N10
90N20
73N30
44N50
48N50
36N60
67N10
75N10
42N20
50N20
mosfet 4400
MOSFET 11N80
mosfet 20n60
7n80
20N60 mosfet
4800 mosfet
mosfet 4800 circuit
4500 MOS
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