IXFN80N50 Search Results

IXFN80N50 Price and Stock

Filter by Manufacturer


Littelfuse Inc IXFN80N50P MOSFET N-CH 500V 66A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN80N50P	Tube	2,956		1	1 $34.54 10 $25.548 100 $34.54 1000 $34.54 10000 $34.54	Buy Now
Verical	IXFN80N50P		286		1	1 $34.5 10 $28.5 100 $24.75 1000 $24.75 10000 $24.75	Buy Now
Newark	IXFN80N50P	Bulk	103		1	1 $38.57 10 $32.97 100 $30.71 1000 $30.71 10000 $30.71	Buy Now
RS	IXFN80N50P	Bulk		8 Weeks	10	1 - 10 $34.86 100 $34.86 1000 $34.86 10000 $34.86	Get Quote
Chip1Stop	IXFN80N50P	Tube	296			1 $24.7 10 $21.5 100 $19.4 1000 $19.4 10000 $19.4	Buy Now
Littelfuse Inc IXFN80N50Q3 MOSFET N-CH 500V 63A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN80N50Q3	Tube			1	1 $45.87 10 $36.23 100 $36.23 1000 $36.23 10000 $36.23	Buy Now
Newark	IXFN80N50Q3	Bulk			300	1 - 10 - 100 - 1000 $54.34 10000 $54.34	Buy Now
RS	IXFN80N50Q3	Bulk		8 Weeks	10	1 - 10 $56.04 100 $56.04 1000 $56.04 10000 $56.04	Get Quote
IXYS Corporation IXFN80N50Q2 MOSFET N-CH 500V 72A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN80N50Q2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	IXFN80N50Q2					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXFN80N50 Discmsft Nch Hiperfets-Std Sot-227B(Mini/ Tube \|Littelfuse IXFN80N50
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFN80N50	Bulk			300	1 - 10 - 100 - 1000 $87.81 10000 $87.81	Buy Now
RS	IXFN80N50	Bulk		8 Weeks	10	1 - 10 $69.37 100 $69.37 1000 $69.37 10000 $69.37	Get Quote
IXYS Corporation IXFN80N50P MOSFET Modules 500V 80A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN80N50P		736			1 $30.15 10 $23.62 100 $22.53 1000 $22.53 10000 $22.53	Buy Now
Quest Components	IXFN80N50P		56			1 $39.072 10 $39.072 100 $33.2112 1000 $33.2112 10000 $33.2112	Buy Now
TTI	IXFN80N50P	Tube			300	1 - 10 - 100 - 1000 $22.54 10000 $22.54	Buy Now
New Advantage Corporation	IXFN80N50P		681		1	1 - 10 - 100 $46.6 1000 $43.49 10000 $43.49	Buy Now

Find more IXFN80N50 price and stock on Findchips.com

IXFN80N50 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
IXFN80N50	IXYS	500V HiPerFET power MOSFET single die MOSFET	Original	PDF
IXFN80N50P	IXYS	PolarHV HiPerFET Power MOSFET	Original	PDF
IXFN80N50Q2	IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS	Original	PDF
IXFN80N50Q2	IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 500V 80A SOT-227B	Original	PDF
IXFN80N50Q3	IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 500V 63A SOT-227	Original	PDF

IXFN80N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Ixfn80n50q3 Abstract: No abstract text available Text: Advance Technical Information IXFN80N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 500V 63A Ω 65mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFN80N50Q3 250ns E153432 80N50Q3 3-02-11-A Ixfn80n50q3	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information HiPerFETTM Power MOSFET Q2-Class VDSS = 500V ID25 = 80A Ω RDS on ≤ 60mΩ ≤ 250ns trr IXFN80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432	Original	250ns IXFN80N50Q2 OT-227 E153432 80N50Q2 05-28-08-G	PDF
IXFN80N50Q2 Abstract: No abstract text available Text: IXFN80N50Q2 HiperFETTM Power MOSFET Q2-Class VDSS ID25 RDS on trr = =   500V 72A  65m 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M	Original	IXFN80N50Q2 250ns E153432 80N50Q2 5-28-08-G IXFN80N50Q2	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFN80N50Q3 RDS on trr = = ≤ ≤ 500V 63A Ω 65mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFN80N50Q3 250ns E153432 80N50Q3 3-02-11-A	PDF
IXFN80N50Q2 Abstract: 80N50Q2 Text: Preliminary Technical Information HiPerFETTM Power MOSFET Q2-Class IXFN80N50Q2 VDSS = 500V ID25 = 80A Ω RDS on ≤ 60mΩ ≤ 250ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432	Original	IXFN80N50Q2 250ns OT-227 E153432 80N50Q2 05-28-08-G IXFN80N50Q2	PDF
IXFH32N50Q equivalent Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30 Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω	Original	IXFD50N20-7X IXFD50N20Q-7X IXFD80N20Q-8X IXFD90N20Q-8Y IXFD120N20-9X IXFD180N20-9Y IXFD60N25Q-8X IXFD100N25-9X IXFD40N30-7X IXFD40N30Q-7X IXFH32N50Q equivalent ixfk24n100 IXFN80N50 1672 mos-fet IXFH40N30	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on trr IXFN 80N50 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50 100kHz 125OC	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
IXAN0009 Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power	Original	IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w	PDF
IXDD 614 Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers	Original	AN0002 RH159NB D-68623; IXDD 614 BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS	PDF
IXFN80N50 Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 39N90 RDS on t D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	39N90 IXFN80N50 728B1	PDF

IXFd50n20 Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type	Original		PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 39N90 RDS on t D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary Data S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900	Original	39N90 IXFN80N50 728B1	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 VDSS ID25 RDS on = 500 V = 72 A Ω = 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80N50 227TM IXFN80N50 728B1	PDF
220v AC voltage stabilizer schematic diagram Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585	Original	AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p	PDF
IXFN80N50 Abstract: 80n50 80N50 MOSFET IXYS IXFN80N50 Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 VDSS ID25 RDS on = 500 V = 72 A Ω = 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80N50 227TM IXFN80N50 728B1 80n50 80N50 MOSFET IXYS IXFN80N50	PDF
IXFD21N100F-8F Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50 Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005	Original	IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50	PDF
IXAN0010 Abstract: 0010 ixan0010 4 ixan0010 2 MOSFET IGBT DRIVERS THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS 18V, 400mW Zener diodes protect mosfet igbt drivers theory IXDD408 IXDD Text: IXAN0010 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers 2. Types of Drivers	Original	IXAN0010 D-68623; IXAN0010 0010 ixan0010 4 ixan0010 2 MOSFET IGBT DRIVERS THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS 18V, 400mW Zener diodes protect mosfet igbt drivers theory IXDD408 IXDD	PDF
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50	PDF
POWER MOSFET 4600 Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90 Text: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X	OCR Scan	1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD67N10-7X XFD75N10-7X IXFD75N10Q-7X XFD80N100-8X XFD170N10-9X XFD230N10-9Y IXFD70N15-7X POWER MOSFET 4600 MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90	PDF

Privacy Settings

IXFN80N50 Search Results

IXFN80N50 Price and Stock

Littelfuse Inc IXFN80N50P

Littelfuse Inc IXFN80N50Q3

IXYS Corporation IXFN80N50Q2

Littelfuse Inc IXFN80N50

IXYS Corporation IXFN80N50P

IXFN80N50 Datasheets (5)

IXFN80N50 Datasheets Context Search

Ixfn80n50q3

Untitled

IXFN80N50Q2

Untitled

IXFN80N50Q2

IXFH32N50Q equivalent

Untitled

IXTD08N100P-1A

schematic diagram atx Power supply 500w

irfb4115

IRF1830G

IXAN0009

IXDD 614

IXFN80N50

IXFd50n20

Untitled

Untitled

220v AC voltage stabilizer schematic diagram

STW20N60

IXFN80N50

IXFD21N100F-8F

IXAN0010

ne 22 mosfet

POWER MOSFET 4600