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    IXGH16N60B2 Price and Stock

    IXYS Corporation IXGH16N60B2D1

    IGBT 600V 40A 150W TO247
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    DigiKey IXGH16N60B2D1 Tube
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    IXYS Corporation IXGH16N60B2

    IGBT Transistors 600V 16A
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    Mouser Electronics IXGH16N60B2
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    IXYS Integrated Circuits Division IXGH16N60B2D1

    IGBT DIS.DIODE SINGLE 16A 600V H.FAST TO247-3
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    Ozdisan Elektronik IXGH16N60B2D1
    • 1 $2.31352
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    IXGH16N60B2 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH16N60B2D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 150W TO247 Original PDF
    IXGH 16N60B2D1 IXYS TRANS IGBT CHIP N-CH 600V 40A 3TO-247 Original PDF

    IXGH16N60B2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXGH16N60B2

    Abstract: 16N60 IXGH16N60B2D1 C3519 16N60B IF110 IXGA16N60B2D1 IXGP16N60B2D1
    Text: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 2.3V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 O-263 IF110 16N60B3D1 IXGH16N60B2 16N60 IXGH16N60B2D1 C3519 16N60B IF110 IXGA16N60B2D1 IXGP16N60B2D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 2.3V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 O-263 IF110 16N60B3D1 PDF

    IXGH16N60B2D1

    Abstract: IXGP16N60B2D1
    Text: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 1.95V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 O-263 IF110 16N60B2D1 IXGH16N60B2D1 IXGP16N60B2D1 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF